N-channel 0.09 TO-247 FDmeshPower MOSFET (with fast diode) Type S
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STW45NM60D
N-channel 0.09 TO-247 FDmeshPower MOSFET (with fast diode)
Type STW45NM60D
VDSS (@Tjmax)
RDS(on) 0.11
High dv/dt avalanche capabilities 100% avalanche tested input capacitance gate charge gate input resistance
TO-247
Application
Switching applications Figure Internal schematic diagram
Description
FDmeshassociates advantages reduced on-resistance fast switching with intrinsic fast-recovery body diode. therefore strongly recommended bridge topologies, particular phase-shift converters.
Table
Device summary
Marking W45NM60D Package TO-247 Packaging Tube
Order code STW45NM60D
June 2009
15709
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www.st.com
Contents
STW45NM60D
Contents
Electrical ratings Electrical characteristics
Electrical characteristics (curves)
Test circuit
Package mechanical data Revision history
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STW45NM60D
Electrical ratings
Electrical ratings
Table
Symbol
Absolute maximum ratings
Parameter Drain-source voltage (VGS Gate- source voltage Drain current (continuous) Drain current (continuous) Drain current (pulsed) Total dissipation Derating factor Value 3.33 Unit W/°C V/ns
PTOT dv/dt Tstg
Peak diode recovery voltage slope Storage temperature Max. operating junction temperature
Pulse width limited safe operating area di/dt A/µs, V(BR)DSS
Table
Symbol Rthj-case Rthj-amb
Thermal data
Parameter Thermal resistance junction-case Thermal resistance junction-amb Maximum lead temperature soldering purpose Value Unit °C/W °C/W
Table
Symbol
Avalanche characteristics
Parameter Avalanche current, repetitive not-repetitive (pulse width limited max) Single pulse avalanche energy (starting IAS, value Unit
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Electrical characteristics
STW45NM60D
Electrical characteristics
(TCASE unless otherwise specified) Table
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage Drain current (VGS Gate-body leakage current (VDS Gate threshold voltage Static drain-source resistance Test conditions rating rating, VGS, 22.5 0.09 Min. ±100 0.11 Typ. Max. Unit
Table
Symbol Ciss Coss Crss Coss eq.(2)
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Gate input resistance Total gate charge Gate-source charge Gate-drain charge Test conditions ID(on) RDS(on)max, 22.5 Min. Typ. Max. 3500 1400 Unit
MHz,
Gate Bias test signal level open drain Figure
Pulsed: Pulse duration duty cycle 1.5%. Coss defined constant equivalent capacitance giving same charging time Coss when increases from VDSS
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STW45NM60D
Electrical characteristics
Table
Symbol td(on) td(off)
Switching times
Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions 22.5 Figure Min. Typ. Max. Unit
Table
Symbol ISDM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current di/dt A/µs, Figure di/dt A/µs, Figure Test conditions Min. Typ. Max. Unit
IRRM IRRM
Pulse width limited safe operating area Pulsed: Pulse duration duty cycle 1.5%.
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Electrical characteristics
STW45NM60D
Figure
Electrical characteristics (curves)
Safe operating area Figure Thermal impedance
Figure
Output characteristics
Figure
Transfer characteristics
Figure
Transconductance
Figure
Static-drain source resistance
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STW45NM60D Figure Gate charge gate-source voltage Figure
Electrical characteristics Capacitance variations
Figure Normalized gate threshold voltage temperature
Figure Normalized resistance temperature
Figure Source-drain diode forward characteristics
Figure Normalized BVDSS temperature
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Test circuit
STW45NM60D
Test circuit
Figure Gate charge test circuit
2200
Figure Switching times test circuit resistive load
100nF
D.U.T.
Vi=20V=VGMAX
2200
IG=CONST 2.7k
AM01469v1
D.U.T.
AM01468v1
Figure Test circuit inductive load Figure Unclamped inductive load test switching diode recovery times circuit
D.U.T.
FAST DIODE
L=100µH 1000
2200
D.U.T.
AM01470v1 AM01471v1
Figure Unclamped inductive waveform
V(BR)DSS
Figure Switching time waveform
tdon toff tdoff
AM01472v1
AM01473v1
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STW45NM60D
Package mechanical data
Package mechanical data
order meet environmental requirements, offers these devices different grades ECOPACK® packages, depending their level environmental compliance. ECOPACK® specifications, grade definitions product status available www.st.com. ECOPACK trademark.
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Package mechanical data
STW45NM60D
TO-247 Mechanical data
Min. 4.85 2.20 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75
Dim.
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Revision history
Revision history
Table
Date 08-Jun-2009
Document revision history
Revision First release Changes
15709
11/12
STW45NM60D
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