N-channel DPAK, TO-220, TO-220FP, IPAK SuperMESH3Power MOSFET Typ
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STD5N95K3, STF5N95K3 STP5N95K3, STU5N95K3
N-channel DPAK, TO-220, TO-220FP, IPAK SuperMESH3Power MOSFET
Type STD5N95K3 STF5N95K3 STP5N95K3 STU5N95K3
VDSS
RDS(on)
TO-220
TO-220FP
100% avalanche tested Extremely large avalanche performance Gate charge minimized Very intrinsic capacitances Zener-protected Figure
IPAK
DPAK
Application
Internal schematic diagram
D(2)
Switching applications
Description
SuperMESH3series power MOSFETS result fine-tuning ST's well-established strip-based PowerMESHlayout with optimized vertical structure. innovative design offer significantly reduced onresistance, exceptional dynamic performance very large avalanche capability, making device suitable most demanding applications.
G(1)
S(3)
AM01476v1
Table
Device summary
Marking 5N95K3 5N95K3 5N95K3 5N95K3 Package DPAK TO-220FP TO-220 IPAK Packaging Tape reel Tube Tube Tube
Order code STD5N95K3 STF5N95K3 STP5N95K3 STU5N95K3
2009
15696
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www.st.com
This preliminary information product development undergoing evaluation. Details subject change without notice.
Contents
STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
Contents
Electrical ratings Electrical characteristics Test circuits
Package mechanical data Revision history
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STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
Electrical ratings
Electrical ratings
Table
Symbol
Absolute maximum ratings
Value Parameter TO-220 TO-220FP IPAK DPAK Gate- source voltage Drain current (continuous) Drain current (continuous) Drain current (pulsed) Total dissipation Avalanche current, repetitive notrepetitive (pulse width limited max) Single pulse avalanche energy (starting IAR, Peak diode recovery voltage slope Insulation withstand voltage (AC) Operating junction temperature Storage temperature
Unit 2500 V/ns
2.2(1) 14(1)
PTOT dv/dt(3) VISO Tstg
Limited only maximum temperature allowed Pulse width limited safe operating area di/dt A/µs, peak V(BR)DSS
Table
Symbol Rthj-case Rthj-amb Rthj-pcb
Thermal data
Value Parameter Thermal resistance junction-case Thermal resistance junction-ambient Thermal resistance junction-pcb Maximum lead temperature soldering purpose TO-220 TO-220FP IPAK DPAK 1.39 62.50 1.39 Unit °C/W °C/W °C/W °C/W
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Electrical characteristics
STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
Electrical characteristics
(Tcase unless otherwise specified) Table
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
/off states
Parameter Drain-source breakdown voltage Test conditions Min. Typ. Max. Unit
rating Zero gate voltage drain current (VGS rating, TC=125 Gate-body leakage current (VDS VDS=0
Gate threshold voltage VGS, Static drain-source resistance 1.75
Table
Symbol Ciss Coss Crss Co(tr)(2)
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent capacitance time related Equivalent capacitance energy related Gate input resistance Total gate charge Gate-source charge Gate-drain charge Test conditions 1.75 Min. Typ. Max. Unit
MHz,
Co(er)(3)
open drain (see Figure
Pulsed: Pulse duration duty cycle 1.5% Coss time related defined constant equivalent capacitance giving same charging time Coss when increases from VDSS Coss energy related defined constant equivalent capacitance giving same stored energy Coss when increases from VDSS
4/13
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STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
Electrical characteristics
Table
Symbol td(on) td(off)
Switching times
Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions 1.75 (see Figure Min. Typ. Unit
Table
Symbol ISDM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current di/dt A/µs VDD= (see Figure di/dt A/µs VDD= (see Figure Test conditions Min. Typ. Unit
IRRM IRRM
Pulse width limited safe operating area Pulsed: pulse duration duty cycle 1.5%
Table
Symbol BVGSO
Gate-source Zener diode
Parameter Gate-source breakdown voltage Test conditions Igs=± (open drain) Min. Typ. Max. Unit
built-in back-to-back Zener diodes have specifically been designed enhance only device's capability, also make them safely absorb possible voltage transients that occasionally applied from gate source. this respect Zener voltage appropriate achieve efficient cost-effective intervention protect device's integrity. These integrated Zener diodes thus avoid usage external components.
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Test circuits
STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
Figure
Test circuits
Switching times test circuit resistive load Figure Gate charge test circuit
2200
100nF
D.U.T.
Vi=20V=VGMAX
2200
IG=CONST 2.7k
AM01469v1
D.U.T.
AM01468v1
Figure
Test circuit inductive load Figure switching diode recovery times
Unclamped inductive load test circuit
D.U.T.
FAST DIODE
L=100µH 1000
2200
D.U.T.
AM01470v1 AM01471v1
Figure
Unclamped inductive waveform
V(BR)DSS
Figure
Switching time waveform
tdon toff tdoff
AM01472v1
AM01473v1
6/13
15696
STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
Package mechanical data
Package mechanical data
order meet environmental requirements, offers these devices different grades ECOPACK® packages, depending their level environmental compliance. ECOPACK® specifications, grade definitions product status available www.st.com. ECOPACK trademark.
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Package mechanical data
STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
TO-252 (DPAK) mechanical data
DIM. 0.60 0.20 4.40 9.35 2.80 0.80 6.40 2.28 4.60 10.10 min. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.60 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20
0068772_G
8/13
15696
STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
Package mechanical data
TO-220FP mechanical data Dim. Min.
28.6 15.9 0.45 0.75 1.15 1.15 4.95 30.6 10.6 16.4
Typ.
Max.
2.75 1.70 10.4
7012510_Rev_J
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Package mechanical data
STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
TO-220 mechanical data
4.40 0.61 1.14 0.48 15.25 1.27 2.40 4.95 1.23 6.20 2.40 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019
inch 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116
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STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
Package mechanical data
TO-251 (IPAK) mechanical data
DIM. (L1) 9.00 0.80 0.80 4.40 16.10 9.40 1.20 5.20 0.45 0.48 6.00 6.40 2.28 4.60 min. 2.20 0.90 0.64 max. 2.40 1.10 0.90 0.95 5.40 0.60 0.60 6.20 6.60
0068771_H
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Revision history
STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
Revision history
Table
Date 12-May-2009
Document revision history
Revision First release Changes
12/13
15696
STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3
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