N-channel 1.28 DPAK, TO-220FP UltraFASTmeshPower MOSFET Type STD5
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STD5N52U STF5N52U
N-channel 1.28 DPAK, TO-220FP UltraFASTmeshPower MOSFET
Type STD5N52U STF5N52U
VDSS
RDS(on)
100% avalanche tested Outstanding dv/dt capability Gate charge minimized Very intrinsic capacitances Very RDS(on) Extremely Figure
DPAK
TO-220FP
Application
Internal schematic diagram
D(2)
Switching applications High voltage inverters specific Lighting full bridge topology Motor control
G(1)
Description
UltraFASTmeshseries associates advantages reduced on-resistance, Zener gate protection very high dv/dt capability with extremely enhanced fast body-drain recovery diode.
S(3)
AM01476v1
Table
Device summary
Marking 5N52U 5N52U Package DPAK TO-220FP Packaging Tape reel Tube
Order code STD5N52U STF5N52U
2009
15684
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www.st.com
Contents
STF5N52U, STD5N52U
Contents
Electrical ratings Electrical characteristics
Electrical characteristics (curves)
Test circuits
Package mechanical data Packaging mechanical data Revision history
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STF5N52U, STD5N52U
Electrical ratings
Electrical ratings
Table
Symbol
Absolute maximum ratings
Value Parameter TO-220FP Gate- source voltage Drain current (continuous) Drain current (continuous) Drain current (pulsed) Total dissipation Avalanche current, repetitive not-repetitive (pulse width limited max) Single pulse avalanche energy (starting IAR, Peak diode recovery voltage slope 2800 2500 17.6 DPAK V/ns Unit
PTOT dv/dt(2)
VESD(G-S) (HBM C=100 R=1.5 VISO Tstg Insulation withstand voltage (RMS) from three leads external heat sink (t=1 s;TC=25 Operating junction temperature Storage temperature
Pulse width limited safe operating area di/dt A/µs, peak V(BR)DSS
Table
Symbol Rthj-case Rthj-amb
Thermal data
Value Parameter TO-220FP Thermal resistance junction-case Thermal resistance junction-ambient Maximum lead temperature soldering purpose 62.5 DPAK 1.78 °C/W °C/W °C/W Unit
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Electrical characteristics
STF5N52U, STD5N52U
Electrical characteristics
(Tcase unless otherwise specified) Table
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
/off states
Parameter Drain-source breakdown voltage Test conditions Min. 3.75 1.28 Typ. Max. Unit
rating Zero gate voltage drain current (VGS rating, TC=125 Gate-body leakage current (VDS
Gate threshold voltage VGS, Static drain-source resistance
Table
Symbol Ciss Coss Crss Co(tr)(1)
Dynamic
Parameter Input capacitance Output capacitance Reverse transfer capacitance Equivalent capacitance time related Gate input resistance Total gate charge Gate-source charge Gate-drain charge Test conditions Min. Typ. 13.4 Max. Unit
MHz,
open drain (see Figure
16.9
Coss time related defined constant equivalent capacitance giving same charging time Coss when increases from VDSS
Table
Symbol td(on) td(off)
Switching times
Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions (see Figure Min. Typ. 11.4 13.6 23.1 Max. Unit
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STF5N52U, STD5N52U
Electrical characteristics
Table
Symbol ISDM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current di/dt A/µs VDD= (see Figure di/dt A/µs VDD= (see Figure Test conditions Min. Typ. Max. Unit 17.6
IRRM IRRM
Pulse width limited safe operating area Pulsed: pulse duration duty cycle 1.5%
Table
Symbol BVGSO
Gate-source Zener diode
Parameter Gate-source breakdown voltage Test conditions Igs=± (open drain) Min. Typ. Max. Unit
built-in back-to-back Zener diodes have specifically been designed enhance only device's capability, also make them safely absorb possible voltage transients that occasionally applied from gate source. this respect Zener voltage appropriate achieve efficient cost-effective intervention protect device's integrity. These integrated Zener diodes thus avoid usage external components.
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Electrical characteristics
STF5N52U, STD5N52U
Figure
Electrical characteristics (curves)
Safe operating area TO-220FP Figure Thermal impedance TO-220FP
Figure
Safe operating area DPAK
Figure
Thermal impedance DPAK
Figure
Output characteristics
Figure
Transfer characteristics
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STF5N52U, STD5N52U Figure Normalized BVDSS temperature Figure
Electrical characteristics Static drain-source resistance
Figure
Gate charge gate-source voltage
Figure Capacitance variations
Figure Normalized gate threshold voltage temperature
Figure Normalized resistance temperature
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Electrical characteristics Figure Source-drain diode forward characteristics
STF5N52U, STD5N52U Figure Maximum avalanche energy temperature
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Test circuits
Test circuits
Figure Gate charge test circuit
2200
Figure Switching times test circuit resistive load
100nF
D.U.T.
Vi=20V=VGMAX
2200
IG=CONST 2.7k
AM01469v1
D.U.T.
AM01468v1
Figure Test circuit inductive load Figure Unclamped inductive load test switching diode recovery times circuit
D.U.T.
FAST DIODE
L=100µH 1000
2200
D.U.T.
AM01470v1 AM01471v1
Figure Unclamped inductive waveform
V(BR)DSS
Figure Switching time waveform
tdon toff tdoff
AM01472v1
AM01473v1
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Package mechanical data
STF5N52U, STD5N52U
Package mechanical data
order meet environmental requirements, offers these devices different grades ECOPACK® packages, depending their level environmental compliance. ECOPACK® specifications, grade definitions product status available www.st.com. ECOPACK trademark.
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STF5N52U, STD5N52U
Package mechanical data
TO-252 (DPAK) mechanical data
DIM. 0.60 0.20 4.40 9.35 2.80 0.80 6.40 2.28 4.60 10.10 min. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.60 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20
0068772_G
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Package mechanical data
STF5N52U, STD5N52U
TO-220FP mechanical data Dim. Min.
28.6 15.9 0.45 0.75 1.15 1.15 4.95 30.6 10.6 16.4
Typ.
Max.
2.75 1.70 10.4
7012510_Rev_J
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STF5N52U, STD5N52U
Packaging mechanical data
Packaging mechanical data
DPAK FOOTPRINT
dimensions millimeters
TAPE REEL SHIPMENT
REEL MECHANICAL DATA
DIM. 12.8 20.2 16.4 22.4 18.4 13.2 MIN. MAX. 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK 2500 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM.
BASE 2500
MIN. 10.4 1.65 2.55
15.7 16.3
inch MIN. MAX. 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574
0.618 0.641
MAX. 10.6 12.1 1.85 2.75
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Revision history
STF5N52U, STD5N52U
Revision history
Table
Date 06-May-2009
Document revision history
Revision First release Changes
14/15
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STF5N52U, STD5N52U
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