N-channel 0.033 MDmeshV Power MOSFET TO-247 Type STW77N65M5

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N-channel 0.033 MDmeshV Power MOSFET TO-247 Type STW77N65M5

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STW77N65M5
N-channel 0.033 MDmeshV Power MOSFET TO-247
Type STW77N65M5
VDSS @TjMAX
RDS(on) 0.038
TO-247 worldwide best RDS(on) Higher VDSS rating Higher dv/dt capability Excellent switching performance Easy drive 100% avalanche tested
TO-247
Application
Switching applications
Figure
Internal schematic diagram
Description
MDmesh revolutionary Power MOSFET technology, which combines innovative proprietary vertical process with well known company`s PowerMESHhorizontal layout. resulting product extremely onresistance, unmatched among silicon-based Power MOSFETs, making especially suited applications which require superior power density outstanding efficiencies.
Table
Device summary
Marking 77N65M5 Package TO-247 Packaging Tube
Order codes STW77N65M5
January 2009
www.st.com
This preliminary information product development undergoing evaluation. Details subject change without notice.
Electrical ratings
STW77N65M5
Electrical ratings
Table
Symbol PTOT Gate- source voltage Drain current (continuous) Drain current (continuous) Drain current (pulsed) Total dissipation current during repetitive single pulse avalanche (pulse width limited TJMAX) Single pulse avalanche energy (starting 25°C, IAR, 50V)
Absolute maximum ratings
Parameter Value 41.5 Unit V/ns
dv/dt Peak diode recovery voltage slope Tstg Storage temperature Max. operating junction temperature
Pulse width limited safe operating area di/dt A/µs, peak V(BR)DSS
Table
Symbol
Thermal data
Parameter Value 0.31 Unit °C/W °C/W
Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient Maximum lead temperature soldering purpose
STW77N65M5
Electrical characteristics
Electrical characteristics
unless otherwise specified) Table
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
/off states
Parameter Drain-source breakdown voltage Test conditions Min. 0.033 0.038 Typ. Max. Unit
rating Zero gate voltage drain current (VGS rating, TC=125 Gate-body leakage current (VDS
Gate threshold voltage VGS, Static drain-source resistance
Table
Symbol gfs(1) Ciss Coss Crss Co(tr)(2)
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent capacitance time related Equivalent capacitance energy related Intrinsic gate resistance Total gate charge Gate-source charge Gate-drain charge Test conditions Min. Typ. Max. Unit
MHz,
Co(er)(3)
open drain (see Figure
Pulsed: Pulse duration duty cycle 1.5% Coss time related defined constant equivalent capacitance giving same charging time Coss when increases from VDSS Coss energy related defined constant equivalent capacitance giving same stored energy Coss when increases from VDSS
Electrical characteristics
STW77N65M5
Table
Symbol td(on) td(off)
Switching times
Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions (see Figure Min. Typ. Unit
Table
Symbol ISDM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current di/dt A/µs (see Figure di/dt A/µs (see Figure Test conditions Min. Typ. Max. Unit
IRRM IRRM
Pulse width limited safe operating area Pulsed: Pulse duration duty cycle 1.5%
STW77N65M5
Test circuits
Figure
Test circuits
Switching times test circuit resistive load Figure Gate charge test circuit
2200
100nF
D.U.T.
Vi=20V=VGMAX
2200
IG=CONST 2.7k
AM01469v1
D.U.T.
AM01468v1
Figure
Test circuit inductive load Figure switching diode recovery times
Unclamped inductive load test circuit
D.U.T.
FAST DIODE
L=100µH 1000
2200
D.U.T.
AM01470v1 AM01471v1
Figure
Unclamped inductive waveform
V(BR)DSS
Figure
Switching time waveform
tdon toff tdoff
AM01472v1
AM01473v1
Package mechanical data
STW77N65M5
Package mechanical data
order meet environmental requirements, offers these devices different grades ECOPACK® packages, depending their level environmental compliance. ECOPACK® specifications, grade definitions product status available www.st.com. ECOPACK® trademark.
STW77N65M5
Package mechanical data
TO-247 Mechanical data
Min. 4.85 2.20 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75
Dim.
Revision history
STW77N65M5
Revision history
Table
Date 20-Jan-2009
Document revision history
Revision First release Changes
STW77N65M5
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N-channel 0.033 MDmeshV Power MOSFET TO-247 Type STW77N65M5

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