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TransilTM, transient voltage suppressor Transient voltage suppres
Top Searches for this datasheetLFTVS10-1F3 TransilTM, transient voltage suppressor Transient voltage suppressor Electrostatic discharge protection Electrical overstress protection Unidirectional device clamping factor VCL/VBR Fast response time Very thin package: 0.605 RoHS compliant Figure configuration (bump side) Flip Chip bumps) Complies with following standards: 61000-4-2 level (air discharge) (contact discharge) Description LFTVS10-1F3 single line diode designed specifically protection integrated circuits portable equipment miniaturized electronic devices subject transient overvoltages. Figure Device configuration Transil trademark STMicroelectronics November 2008 www.st.com Characteristics LFTVS10-1F3 Characteristics Table Symbol Absolute maximum ratings (Tamb Parameter Peak pulse power dissipation (10/1000 pulse) Test condition Value initial Tamb initial Tamb +150 Unit Peak pulse power dissipation (8/20 pulse) repetitive surge peak forward current Storage temperature range Maximum operating junction temperature IFSM Tstg Table Symbol Symbol Cline Electrical characteristics (Tamb Parameter Breakdown voltage Leakage current Stand-off voltage Clamping voltage Dynamic impedance Peak pulse current Voltage temperature coefficient Forward voltage drop Test conditions Slope 1/Rd Min. Typ. Max. Unit 1.05 10-4 VOSC pulse waveform current recommended more than Even diode failure mode short circuit bumps could exceed melting temperature component disassembled from board. LFTVS10-1F3 Characteristics Figure Relative variation peak pulse power versus initial junction temperature Figure Peak pulse power versus exponential pulse duration (typical value) initial PPP[Tj initial] PPP[Tj initial=25°C] 10000 PPP(W) 1000 Tj(°C) tp(µs) 1000 Figure Clamping voltage versus peak pulse current (typical values) Figure Relative variation leakage current versus junction temperature (typical values) 10.0 IPP(A) 1000 Pulse IR[Tj] IR[Tj=25°C] VCL(V) Tj(°C) Figure Forward voltage drop versus peak forward current (typical values) Figure Junction capacitance versus line voltage (typical values) IFM(A) Capacitance(pF) Vr=0 VOSC=30mVRMS TJ=25°C 0.01 initial initial initial 0.001 VFM(V) 0.0001 Voltage(V) Ordering information scheme Figure LFTVS10-1F3 Breakdown voltage versus initial junction temperature (typical value) 13.0 VBR(V) 12.0 11.0 10.0 Tj(° Ordering information scheme Figure Ordering information scheme forward voltage Transient voltage suppressor Breakdown voltage VMAX Number lines single line Package Flip Chip Lead-free, pitch LFTVS10-1F3 Package information Package information order meet environmental requirements, offers these devices ECOPACK® packages. These packages have lead-free second level interconnect. category second level interconnect marked inner label, compliance with JEDEC Standard JESD97. maximum ratings related soldering conditions also marked inner label. ECOPACK trademark. ECOPACK specifications available www.st.com. Figure Flip Chip dimensions 0.77 0.77 Figure Footprint recommendations Copper Diameter: recommended maximum Solder mask opening: minimum Figure Marking marking manufacturing location datecode year week) Solder stencil opening: recommended Ordering information Figure Flip Chip tape reel specifications 0.05 0.20 0.05 1.55 0.05 LFTVS10-1F3 1.75 0.05 0.69 0.05 dimensions 0.87 User direction unreeling 0.87 Note: More information available application notes: AN2348: "400 flip chip: Package description recommendations use" AN1751: "EMI Filters: Recommendations measurements" Ordering information Table Ordering information Marking Package Flip Chip Weight 0.86 Base Delivery mode Tape reel (7") Order code LFTVS10-1F3 Revision history Table Date 21-Nov-2008 Document revision history Revision Initial release. Changes LFTVS10-1F3 Please Read Carefully: Information this document provided solely connection with products. 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Information this document supersedes replaces information previously supplied. logo registered trademark STMicroelectronics. other names property their respective owners. 2008 STMicroelectronics rights reserved STMicroelectronics group companies Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States America www.st.com Other recent searchesXDMR14A - XDMR14A XDMR14A Datasheet PBSS4220V - PBSS4220V PBSS4220V Datasheet NP80N03EDE - NP80N03EDE NP80N03EDE Datasheet NP80N03KDE - NP80N03KDE NP80N03KDE Datasheet NP80N03CDE - NP80N03CDE NP80N03CDE Datasheet NP80N03DDE - NP80N03DDE NP80N03DDE Datasheet NP80N03MDE - NP80N03MDE NP80N03MDE Datasheet NP80N03NDE - NP80N03NDE NP80N03NDE Datasheet BHF6505SS - BHF6505SS BHF6505SS Datasheet 2SK3915-01MR - 2SK3915-01MR 2SK3915-01MR Datasheet 2SD2301 - 2SD2301 2SD2301 Datasheet
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