N-channel 0.054 MDmeshII Power MOSFET TO-247 Type STW54NM65N

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N-channel 0.054 MDmeshII Power MOSFET TO-247 Type STW54NM65N

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STW54NM65N
N-channel 0.054 MDmeshII Power MOSFET TO-247
Type STW54NM65N
VDSS (@Tjmax)
RDS(on) 0.065
100% avalanche tested input capacitance gate charge gate input resistance TO-247
Application
Switching applications
Description
This series devices designed using second generation MDmeshtechnology. This revolutionary Power MOSFET associates vertical structure STMicroelectronics' strip layout yield world's lowest onresistance gate charge. therefore suitable most demanding high efficiency converters. Figure Internal schematic diagram
Table
Device summary
Marking 54NM65N Package TO-247 Packaging Tube
Order code STW54NM65N
January 2009
1/12
www.st.com
Contents
STW54NM65N
Contents
Electrical ratings Electrical characteristics
Electrical characteristics (curves)
Test circuit
Package mechanical data Revision history
2/12
STW54NM65N
Electrical ratings
Electrical ratings
Table
Symbol
Absolute maximum ratings
Parameter Drain-source voltage (VGS Gate- source voltage Drain current (continuous) 25°C Drain current (continuous) 100°C Drain current (pulsed) Total dissipation 25°C Peak diode recovery voltage slope Storage temperature Max. operating junction temperature Value 31.5 Unit V/ns
PTOT dv/dt
Tstg
Pulse width limited safe operating area di/dt A/µs, V(BR)DSS
Table
Symbol Rthj-case Rthj-amb
Thermal data
Parameter Thermal resistance junction-case Thermal resistance junction-ambient Maximum lead temperature soldering purpose Value 0.36 Unit °C/W °C/W
Table
Symbol
Avalanche characteristics
Parameter Avalanche current, repetitive not-repetitive (pulse width limited max) Single pulse avalanche energy (starting IAS, Value 1600 Unit
3/12
Electrical characteristics
STW54NM65N
Electrical characteristics
(TCASE unless otherwise specified) Table
Symbol V(BR)DSS dv/dt IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Drain source voltage slope Zero gate voltage drain current (VGS Gate-body leakage current (VDS Gate threshold voltage Static drain-source resistance Test conditions 1mA, VDD= rating rating, @125 VGS, Min. Typ. Max. Unit V/ns
0.054 0.065
Characteristic value turn inductive load
Table
Symbol Ciss Coss Crss Coss
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Total gate charge Gate-source charge Gate-drain charge Gate input resistance Test conditions VDS=15 MHz, Min. Typ. 6000 Max. Unit
(see Figure gate bias=0 Test signal level open drain
Pulsed: Pulse duration duty cycle 1.5% Coss defined constant equivalent capacitance giving same charging time Coss when increases from
4/12
STW54NM65N
Electrical characteristics
Table
Symbol td(on) td(off)
Switching times
Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions (see Figure Min. Typ. Max. Unit
Table
Symbol ISDM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current di/dt A/µs (see Figure di/dt A/µs (see Figure Test conditions Typ. Unit
IRRM IRRM
Pulse width limited safe operating area Pulsed: Pulse duration duty cycle 1.5%
5/12
Electrical characteristics
STW54NM65N
Figure
Electrical characteristics (curves)
Safe operating area
AM03247v1
Figure
Thermal impedance
this
10µs
100µs Tj=150°C Tc=25°C Sinlge pulse 10ms
VDS(V)
Figure
Output characteristics
AM03248v1
Figure
Transfer characteristics
AM003249v1
VGS=10V
VGS=5V VGS=4V VDS(V) VGS(V)
Figure
50.5 40.5
Transconductance
AM03251v1
Figure
RDS(on) 0.067 0.066 TJ=25°C 0.065 0.064 0.063
Static drain-source resistance
AM03250v1
TJ=-50°C
ID=25A VGS=10V
30.5 20.5 TJ=150°C 10.5
0.062 0.061 0.060 ID(A) 0.059 ID(A)
6/12
STW54NM65N Figure Gate charge gate-source voltage Figure
AM03253v1
Electrical characteristics Capacitance variations
AM03252v1
VDD=520V ID=50A
(pF) 10000
Ciss 1000 Coss Crss
Qg(nC) VDS(V)
Figure Normalized gate threshold voltage temperature
VGS(th) (norm) 1.10
AM03254v1
Figure Normalized resistance temperature
RDS(on) (norm)
AM03255v1
1.00
0.90
0.80
0.70
TJ(°C)
TJ(°C)
Figure Source-drain diode forward characteristics
TJ=-50°C TJ=25°C TJ=150°C ISD(A)
AM03257v1
Figure Normalized BVDSS temperature
BVDSS (norm) 1.07 1.05 1.03 1.01 0.99 0.97 0.95 0.93 TJ(°C)
AM03256v1
7/12
Test circuit
STW54NM65N
Test circuit
Figure Gate charge test circuit
Figure Switching times test circuit resistive load
Figure Test circuit inductive load Figure Unclamped inductive load test switching diode recovery times circuit
Figure Unclamped inductive waveform
Figure Switching time waveform
8/12
STW54NM65N
Package mechanical data
Package mechanical data
order meet environmental requirements, offers these devices different grades ECOPACK® packages, depending their level environmental compliance. ECOPACK® specifications, grade definitions product status available www.st.com. ECOPACK® trademark.
9/12
Package mechanical data
STW54NM65N
TO-247 Mechanical data
Min. 4.85 2.20 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75
Dim.
10/12
STW54NM65N
Revision history
Revision history
Table
Date 24-Jul-2008 20-Jan-2009
Document revision history
Revision Initial release Document status promoted from preliminary data datasheet. Changes
11/12
STW54NM65N
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N-channel 0.054 MDmeshII Power MOSFET TO-247 Type STW54NM65N

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