N-channel 0.0025 D2PAK, TO-220 planar STripFETPower MOSFET Type S

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

N-channel 0.0025 D2PAK, TO-220 planar STripFETPower MOSFET Type S

Datasheet Thumbnail

Top Searches for this datasheet

STP200N4F3 STB200N4F3
N-channel 0.0025 D2PAK, TO-220 planar STripFETPower MOSFET
Type STB200N4F3 STP200N4F3 VDSS RDS(on) <0.0031 <0.0035
avalanche tested Standard threshold drive
TO-220
Application
Switching applications Automotive Figure Internal schematic diagram
Description
This STripFETIII Power MOSFET technology among latest improvements, which have been especially tailored minimize on-state resistance providing superior switching performances.
Table
Device summary
Marking 200N4F3 200N4F3 Package TO-220 Packaging Tape reel Tube
Order code STB200N4F3 STP200N4F3
June 2009
13302
1/14
www.st.com
Contents
STB200N4F3, STP200N4F3
Contents
Electrical ratings Electrical characteristics
Electrical characteristics (curves)
Test circuits
Package mechanical data Packaging mechanical data Revision history
2/14
13302
STB200N4F3, STP200N4F3
Electrical ratings
Electrical ratings
Table
Symbol
Absolute maximum ratings
Parameter Drain-source voltage Gate-source voltage Drain current (continuous) Drain current (continuous) Drain current (pulsed) Total dissipation Derating factor Value Unit W/°C V/ns
PTOT dv/dt(4) Tstg
Single pulse avalanche energy Peak diode recovery voltage slope Operating junction temperature Storage temperature
Current limited package Pulse width limited safe operating area Starting 25°C, 60A, VDD= 60A, di/dt A/µs, V(BR)DSS, TJMAX.
Table
Symbol RthJC RthJ-PCB RthJA
Thermal data
Value Parameter TO-220 Thermal resistance junction-case Thermal resistance junction-pcb Thermal resistance junction-ambient 62.5 0.50 °C/W °C/W °C/W Unit
When mounted FR-4 board,
13302
3/14
Electrical characteristics
STB200N4F3, STP200N4F3
Electrical characteristics
(TCASE unless otherwise specified) Table
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS Gate body leakage current (VDS Gate threshold voltage Static drain-source resistance Test conditions rating, rating @125 VGS, TO-220 Min.
±100
Typ.
Max.
Unit
0.0025 0.0031 0.0030 0.0035
Table
Symbol
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions MHz, (see Figure Min. Typ. 5100 1270 Max. Unit
Ciss Coss Crss
Pulsed: pulse duration=300µs, duty cycle 1.5%
4/14
13302
STB200N4F3, STP200N4F3
Electrical characteristics
Table
Symbol td(on) td(off)
Switching times
Parameter Turn-on delay time Rise time Off-voltage rise time Fall time Test conditions (see Figure (see Figure Min. Typ. Max. Unit
Table
Symbol ISDM IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current di/dt A/µs, (see Figure Test conditions Min. Typ. Max. Unit
13302
5/14
Electrical characteristics
STB200N4F3, STP200N4F3
Figure
Electrical characteristics (curves)
Safe operating area Figure Thermal impedance
Figure
Output characteristics
Figure
Transfer characteristics
Figure
Normalized BVDSS temperature
Figure
Static drain-source resistance
6/14
13302
STB200N4F3, STP200N4F3 Figure Gate charge gate-source voltage Figure
Electrical characteristics Capacitance variations
Figure Normalized gate threshold voltage temperature
Figure Normalized resistance temperature
Figure Source-drain diode forward characteristics
13302
7/14
Test circuits
STB200N4F3, STP200N4F3
Test circuits
Figure Gate charge test circuit
Figure Switching times test circuit resistive load
Figure Test circuit inductive load Figure Unclamped inductive load test switching diode recovery times circuit
Figure Unclamped inductive waveform
Figure Switching time waveform
8/14
13302
STB200N4F3, STP200N4F3
Package mechanical data
Package mechanical data
order meet environmental requirements, offers these devices different grades ECOPACK® packages, depending their level environmental compliance. ECOPACK® specifications, grade definitions product status available www.st.com. ECOPACK® trademark.
13302
9/14
Package mechanical data
STB200N4F3, STP200N4F3
D2PAK (TO-263) mechanical data
4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 8.50 2.54 4.88 2.49 2.29 1.27 1.30 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 4.60 0.23 0.93 1.70 0.60 1.36 9.35 10.40 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334
0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.208 0.624 0.106 0.110 0.055 0.069 0.016
0079457_M
10/14
13302
STB200N4F3, STP200N4F3
Package mechanical data
TO-220 mechanical data
4.40 0.61 1.14 0.48 15.25 1.27 2.40 4.95 1.23 6.20 2.40 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019
inch 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116
13302
11/14
Packaging mechanical data
STB200N4F3, STP200N4F3
Packaging mechanical data
D2PAK FOOTPRINT
TAPE REEL SHIPMENT
REEL MECHANICAL DATA
DIM. 12.8 20.2 24.4 30.4 26.4 13.2 MIN. MAX. 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK 1000 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. MIN. 10.5 15.7 1.59 1.65 11.4 11.9 0.25 23.7 24.3 MAX. 10.7 15.9 1.61 1.85 11.6 12.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956
BASE 1000
sales type
12/14
13302
STB200N4F3, STP200N4F3
Revision history
Revision history
Table
Date 02-Mar-2007 02-Oct-2007 23-Jun-2009
Document revision history
Revision First release Added TO-220 package Updated RDS(on) limits Table Figure Changes
13302
13/14
STB200N4F3, STP200N4F3
Please Read Carefully:
Information this document provided solely connection with products. STMicroelectronics subsidiaries ("ST") reserve right make changes, corrections, modifications improvements, this document, products services described herein time, without notice. products sold pursuant ST's terms conditions sale. Purchasers solely responsible choice, selection products services described herein, assumes liability whatsoever relating choice, selection products services described herein. license, express implied, estoppel otherwise, intellectual property rights granted under this document. part this document refers third party products services shall deemed license grant such third party products services, intellectual property contained therein considered warranty covering manner whatsoever such third party products services intellectual property contained therein.
UNLESS OTHERWISE FORTH ST'S TERMS CONDITIONS SALE DISCLAIMS EXPRESS IMPLIED WARRANTY WITH RESPECT AND/OR SALE PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES MERCHANTABILITY, FITNESS PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER LAWS JURISDICTION), INFRINGEMENT PATENT, COPYRIGHT OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED WRITING AUTHORIZED REPRESENTATIVE, PRODUCTS RECOMMENDED, AUTHORIZED WARRANTED MILITARY, CRAFT, SPACE, LIFE SAVING, LIFE SUSTAINING APPLICATIONS, PRODUCTS SYSTEMS WHERE FAILURE MALFUNCTION RESULT PERSONAL INJURY, DEATH, SEVERE PROPERTY ENVIRONMENTAL DAMAGE. PRODUCTS WHICH SPECIFIED "AUTOMOTIVE GRADE" ONLY USED AUTOMOTIVE APPLICATIONS USER'S RISK.
Resale products with provisions different from statements and/or technical features forth this document shall immediately void warranty granted product service described herein shall create extend manner whatsoever, liability
logo trademarks registered trademarks various countries. Information this document supersedes replaces information previously supplied. logo registered trademark STMicroelectronics. other names property their respective owners.
2009 STMicroelectronics rights reserved STMicroelectronics group companies Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Philippines Singapore Spain Sweden Switzerland United Kingdom United States America www.st.com
14/14
13302

N-channel 0.0025 D2PAK, TO-220 planar STripFETPower MOSFET Type S

Top Searches for this datasheet

Other recent searches