SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404 SST38VF640x2.7V 6

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SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404 SST38VF640x2.7V 6

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Mbit (x16) Advanced Multi-Purpose Flash Plus
SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
SST38VF640x2.7V 64Mb (x16) MPF+ memories
FEATURES:
Organized Single Voltage Read Write Operations 2.7-3.6V Superior Reliability Endurance: 100,000 Cycles minimum Greater than years Data Retention3 Power Consumption (typical values MHz) Active Current: (typical) Standby Current: (typical) Auto Power Mode: (typical) 128-bit Unique Security-ID Feature Word, user One-Time-Programmable Protection Security Features Hardware Boot Block Protection/WP# Input Pin, Uniform KWord) Non-Uniform KWord) options available User-controlled individual block KWord) protection, using software only methods Password protection Hardware Reset (RST#) Fast Read Page Read Access Times: Read access time Page Read access times 4-Word Page Read buffer Latched Address Data Fast Erase Times: Sector-Erase Time: (typical) Block-Erase Time: (typical) Chip-Erase Time: (typical) Erase-Suspend/-Resume Capabilities Fast Word Write-Buffer Programming Times: Word-Program Time: (typical) Write Buffer Programming Time: 1.75 Word (typical) 16-Word Write Buffer Automatic Write Timing Internal Generation End-of-Write Detection Toggle Bits Data# Polling RY/BY# Output CMOS Compatibility JEDEC Standard Flash EEPROM Pinouts command sets Compliant Packages Available 48-lead TSOP 48-ball TFBGA non-Pb (lead-free) devices RoHS compliant
PRODUCT DESCRIPTION
SST38VF6401, SST38VF6402, SST38VF6403, SST38VF6404 devices CMOS Advanced Multi-Purpose Flash Plus (Advanced MPF+) manufactured with proprietary, high-performance CMOS SuperFlash technology. split-gate cell design thick-oxide tunneling injector attain better reliability manufacturability compared with alternate approaches. SST38VF6401/6402/6403/6404 write (Program Erase) with 2.7-3.6V power supply. These devices conform JEDEC standard assignments memories. Featuring high performance Word-Program, SST38VF6401/6402/6403/6404 provide typical WordProgram time µsec. faster word-programming performance, Write-Buffer Programming feature, typical word-program time 1.75 µsec. These devices Toggle Data# Polling indicate Program operation completion. addition single-word Read, Advanced MPF+ devices provide Page-Read feature that enables faster word read time words same page. protect against inadvertent write, SST38VF6401/ 6402/6403/6404 have on-chip hardware Software Data Protection schemes. Designed, manufactured, tested wide spectrum applications, these devices available with 100,000 cycles minimum endurance. Data retention rated greater than years. SST38VF6401/6402/6403/6404 suited applications that require convenient economical updating program, configuration, data memory. system applications, Advanced MPF+ significantly improve performance reliability, while lowering power consumption. These devices inherently less energy during Erase Program than alternative flash technologies. total energy consumed function applied voltage, current, time application. given voltage range, SuperFlash technology uses less current program shorter erase time; therefore, total energy consumed during Erase Program operation less than alternative flash technologies.
©2009 Silicon Storage Technology, Inc. S71309-05-000 07/09
logo SuperFlash registered trademarks Silicon Storage Technology, Inc. trademark Silicon Storage Technology, Inc. These specifications subject change without notice.
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
Data Sheet These devices also improve flexibility while lowering cost program, data, configuration storage applications. SuperFlash technology provides fixed Erase Program times, independent number Erase/Program cycles that have occurred. Therefore, system software hardware does have modified de-rated necessary with alternative flash technologies, whose Erase Program times increase with accumulated Erase/Program cycles. SST38VF6401/6402/6403/6404 also offer flexible data protection features. Applications that require memory protection from program erase operations Boot Block, Individual Block Protection, Advanced Protection features. applications that require permanent solution, Irreversible Block Locking feature provides permanent protection memory blocks. meet high-density, surface mount requirements, SST38VF6401/6402/6403/6404 devices offered 48lead TSOP 48-ball TFBGA packages. Figures assignments Table descriptions. when either high. Refer Figure Read cycle timing diagram, further details.
Page Read
Page Read operation utilizes asynchronous method that enables system read data from SST38VF6401/6402/6403/6404 faster rate. This operation allows users read four-word page data average speed 41.25 word. Page Read, initial word read from page requires TACC valid, while remaining three words page require only TPACC. four words page have same address bits, A21-A2, which used select page. Address bits toggled, order, read words within page. Page Read operation SST38VF6401/6402/ 6403/6404 controlled OE#. Both must system obtain data from output pins. controls device selection. When high, chip deselected only standby power consumed. output control used gate data from output pins. data high impedance state when either high. Refer Figure Page Read cycle timing diagram, further details.
DEVICE OPERATION
memory operations functions these devices initiated using commands written device using standard microprocessor Write sequences. command written asserting while keeping low. address latched falling edge CE#, whichever occurs last. data latched rising edge CE#, whichever occurs first. SST38VF6401/6402/6403/6404 also have Auto Power mode which puts device near-standby mode after data been accessed with valid Read operation. This reduces active read current from typically typically Auto Power mode reduces typical active read current range mA/MHz Read cycle time. device requires access time exit Auto Power mode after address transition control signal transition used initiate another Read cycle. device does enter Auto-Low Power mode after power-up with held steadily low, until first address transition driven high.
Word-Program Operation
SST38VF6401/6402/6403/6404 programmed word-by-word basis. Before programming, sector where word exists must fully erased. Program operation accomplished three steps. first step three-byte load sequence Software Data Protection. second step load word address word data. During Word-Program operation, addresses latched falling edge either WE#, whichever occurs last. data latched rising edge either WE#, whichever occurs first. third step internal Program operation which initiated after rising edge fourth CE#, whichever occurs first. Program operation, once initiated, will completed within Figures controlled Program operation timing diagrams Figure flowcharts. During Program operation, only valid reads Data# Polling, Toggle Bits, RY/BY#. During internal Program operation, host free perform additional tasks. commands issued during internal Program operation ignored. During command sequence, should statically held high low. When programming more than words, recommends Write-Buffer Programming.
Read
Read operation SST38VF6401/6402/6403/ 6404 controlled OE#, both which have system obtain data from outputs. used device selection. When high, chip deselected only standby power consumed. output control used gate data from output pins. data high impedance state
©2009 Silicon Storage Technology, Inc.
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Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
Write-Buffer Programming
SST38VF6401/6402/6403/6404 offer Write-Buffer Programming, feature that enables faster effective word programming. this feature, write words with Write-to-Buffer command, then Program Buffer-to-Flash command program Write-Buffer memory. Write-to-Buffer command consists between write cycles. total number write cycles Write-to-Buffer command sequence equal number words written buffer plus four. first three cycles command sequence tell device that Write-to-Buffer operation will begin. fourth cycle tells device number words written into buffer block address these words. Specifically, write cycle consists block address data value called Word Count (WC), which number words written buffer minus one. greater than maximum buffer size minus then operation aborts. fifth cycle, subsequent cycles Writeto-Buffer command, command sequence consists addresses data words written into buffer. these cycles must have same address, otherwise operation aborts. number Write cycles required equal number words written into Write-Buffer, which equal plus one. correct number Write cycles must issued operation will abort. Each Write cycle decrements Write-Buffer counter, even more Write cycles have identical address values. Only final data loaded each buffer location held Write-Buffer. Once Write-to-Buffer command sequence completed, Program Buffer-to-Flash command should issued program Write-Buffer contents specified block memory. block address (i.e. A15) this command must match block address write cycle Write-to-Buffer command operation aborts. Table details Write-to-Buffer Program-Buffer-to-Flash commands. While issuing these command sequences, Write-Buffer Programming Abort detection (DQ1) indicates operation aborted. There several cases which device abort: fourth write cycle Write-to-Buffer command, greater than operation aborts. fifth subsequent cycles Write-toBuffer command, address values, identical, operation aborts. number write cycles between fifth last cycle Write-to-Buffer command greater than operation aborts. After completing Write-to-Buffer command sequence, issuing command other than Program Buffer-to-Flash command, aborts operation. Loading block address, i.e. A21-A15, Program Buffer-to-Flash command that does match block address used Write-to-Buffer command aborts operation.
Write-to-Buffer Program Buffer-to-Flash operation aborts, then device enters Write-BufferAbort mode. execute another operation, Write-toBuffer Abort-Reset command must issued clear return device standard read mode. After Write-to-Buffer Program Buffer-to-Flash commands successfully issued, programming operation monitored using Data# Polling, Toggle Bits, RY/BY#.
Sector/Block-Erase Operations
Sector-Erase Block-Erase operations allow system erase device sector-by-sector, blockby-block, basis. SST38VF6401/6402/6403/6404 offer both Sector-Erase Block-Erase modes. Sector-Erase architecture based sector size KWords. Sector-Erase command erase KWord sector S1023). Block-Erase architecture based block size KWords. SST38VF6401 SST38VF6402 devices, Block-Erase command erase 32KWord Block (B0-B127). non-uniform boot block devices, SST38VF6403 SST38VF6404, Block-Erase command erase KWord block except block that contains boot area. boot area, Block-Erase behaves like Sector-Erase, only erases 4KWord sector. SST38VF6403 device, Block-Erase executed Boot Block (B0), will result device erasing 4KWord sector located A21-A12. SST38VF6404 device, Block-Erase executed Boot Block (B127), will result device erasing 4KWord sector B127 located A21-A12. Sector-Erase operation initiated executing sixbyte command sequence with Sector-Erase command (50H) sector address (SA) last cycle. Block-Erase operation initiated executing six-byte command sequence with Block-Erase command (30H) block address (BA) last cycle. sector block address latched falling edge sixth
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©2009 Silicon Storage Technology, Inc.
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
Data Sheet pulse, while command (50H 30H) latched rising edge sixth pulse. internal Erase operation begins after sixth pulse. End-ofErase operation determined using either Data# Polling Toggle methods. RY/BY# also used monitor erase operation. more information, Figures timing waveforms Figure flowchart. commands, other than Erase-Suspend, issued during Sector- Block-Erase operation ignored. attempt Sector- Block-Erase memory inside block protected Volatile Block Protection, Non-Volatile Block Protection, (low) will ignored. During command sequence, should statically held high low. resume Erase operation, Bypass mode must exited before issuing Erase-Resume. more information about Bypass mode, "Bypass Mode" page
Chip-Erase Operation
SST38VF6401/6402/6403/6404 devices provide Chip-Erase operation, which erases entire memory array state. This operation useful when entire device must quickly erased. Chip-Erase operation initiated executing sixbyte command sequence with Chip-Erase command (10H) address 555H last byte sequence. Erase operation begins with rising edge sixth CE#, whichever occurs first. During Erase operation, only valid reads Toggle Bit, Data# Polling, RY/BY#. Table command sequence, Figure timing diagram, Figure flowchart. commands issued during Chip-Erase operation ignored. low, VPBs NVPBs protect state, attempt execute ChipErase operation ignored. During command sequence, should statically held high low.
Erase-Suspend/Erase-Resume Commands
Erase-Suspend operation temporarily suspends Sector- Block-Erase operation thus allowing data read programmed into sector block that engaged Erase operation. operation executed with onebyte command sequence with Erase-Suspend command (B0H). device automatically enters read mode within (max) after Erase-Suspend command been issued. Valid data read, using Read Page Read operation, from sector block that being erased. Reading address location within Erase-Suspended sectors blocks will output toggling `1'. While Erase-Suspend, Word-Program Write-Buffer Programming operation allowed anywhere except sector block selected Erase-Suspend. resume suspended Sector-Erase Block-Erase operation, system must issue Erase-Resume command. operation executed issuing byte command sequence with Erase-Resume command (30H) address last Byte sequence. When erase operation suspended, re-suspended, after resume cumulative time needed erase operation complete greater than erase time non-suspended erase operation. hold time from Erase-Resume next Erase- Suspend operation less than 200µs, accumulative erase time become very long Therefore, after issuing Erase-Resume command, system must wait least 200µs before issuing another Erase-Suspend command. Erase-Resume command will ignored until program operations initiated during Erase-Suspend complete. Bypass mode entered while Erase-Suspend, only Bypass Word-Program available those sectors blocks that suspended. Bypass Sector-Erase, Bypass Block-Erase, Bypass Chip-Erase, Erase-Suspend, Erase-Resume available. order
©2009 Silicon Storage Technology, Inc.
Write Operation Status Detection
optimize system Write cycle time, SST38VF6401/6402/6403/6404 provide software means detect completion Write (Program Erase) cycle software detection includes status bits: Data# Polling (DQ7) Toggle (DQ6). End-ofWrite detection mode enabled after rising edge WE#, which initiates internal Program Erase operation. actual completion nonvolatile write asynchronous with system. Therefore, Data# Polling Toggle maybe read concurrent with completion write cycle. this occurs, system possibly incorrect result from status detection process. example, valid data appear conflict with either DQ6. prevent false results, upon detection failures, software routine should loop read accessed location additional times. both reads valid, then device completed Write cycle, otherwise failure valid. Write-Buffer Programming feature, informs user either Write-to-Buffer Program Buffer-toFlash operation aborts. either operation aborts, then must cleared issuing Writeto-Buffer Abort Reset command.
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Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
Data Sheet SST38VF6401/6402/6403/6404 also provide signal. This signal indicates status Program Erase operation. Program Erase operation attempted protected sector block, operation will abort. After device initiates abort, corresponding Write Operation Status Detection Bits will stay active approximately 200ns (program erase) before device returns read mode. status these bits during Write operation, Table Data# Polling (DQ7) When SST38VF6401/6402/6403/6404 internal Program operation, attempt read will produce complement true data. Program Bufferto-Flash operation, complement last word loaded Write-Buffer using Write-to-Buffer command. Once Program operation completed, will produce valid data. Note that even though have valid data immediately following completion internal Write operation, remaining data outputs still invalid. Valid data entire data will appear subsequent successive Read cycles after interval During internal Erase operation, attempt read will produce `0'. Once internal Erase operation completed, will produce `1'. Data# Polling valid after rising edge fourth CE#) pulse Program operation. Sector-, Block- Chip-Erase, Data# Polling valid after rising edge sixth CE#) pulse. Figure Data# Polling timing diagram Figure flowchart. Toggle Bits (DQ6 DQ2) During internal Program Erase operation, consecutive attempts read will produce alternating `1's `0's, i.e., toggling between `0'. When internal Program Erase operation completed, will stop toggling, device then ready next operation. Sector-, Block-, Chip-Erase, toggle (DQ6) valid after rising edge sixth CE#) pulse. will Read operation attempted Erase-Suspended Sector Block. Program operation initiated sector/block selected Erase-Suspend mode, will toggle. additional Toggle available DQ2, which used conjunction with check whether particular sector block being actively erased erase-suspended. Table shows detailed status information. Toggle (DQ2) valid after rising edge last CE#) pulse Write operation. Figure Toggle timing diagram Figure flowchart. operation aborts during Write-to-Buffer Program Buffer-to-Flash operation, `1'. reset `0', issue Write-to-Buffer Abort Reset command exit abort state. power-off/power-on cycle Hardware Reset (RST# will also clear DQ1. RY/BY# RY/BY# used determine status Program Erase operation. RY/BY# valid after rising edge final pulse command sequence. RY/BY# then device actively programming erasing. RY/BY# device Read mode. RY/BY# open drain output pin. This means several RY/BY# tied together with pull-up resistor VDD.
Toggle Toggle toggle Data Toggle Toggle Toggle DQ21 Toggle Toggle Toggle Data Data
T1.0 1309
TABLE Write Operation Status
Status Normal Operation Erase-Suspend Mode Standard Program Standard Erase Read from Erase-Suspended Sector/Block Read from Non- EraseSuspended Sector/Block Program Program Bufferto-Flash Busy Abort Data DQ7# DQ7#3 DQ71 DQ7# RY/BY#2
require valid address when reading status information. RY/BY# open drain pin. RY/BY# high Read mode, Read Erase-Suspend mode. During Program Buffer-to-Flash operation, datum complement last word loaded WriteBuffer using Write-to-Buffer command.
©2009 Silicon Storage Technology, Inc. S71309-05-000 07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
Data Protection
SST38VF6401/6402/6403/6404 provide both hardware software features protect nonvolatile data from inadvertent writes. Hardware Data Protection Noise/Glitch Protection: pulse less than will initiate write cycle. Power Up/Down Detection: Write operation inhibited when less than 1.5V. Write Inhibit Mode: Forcing low, high, high will inhibit Write operation. This prevents inadvertent writes during power-up power-down. Hardware Block Protection SST38VF6402 SST39VF6404 devices support hardware block protection, which protects boot block device. SST38VF6402, boot block consists KWord block, SST39VF6404 boot block consists KWord sectors KWord total). SST38VF6401 SST38VF6403 devices support bottom hardware block protection, which protects bottom boot block device. SST38VF6401, boot block consists bottom KWord block, SST39VF6403 Boot Block consists bottom KWord sectors KWord total). boot block addresses described Table TABLE Boot Block Address Ranges
Product Bottom Boot Uniform SST38VF6401 Boot Uniform SST38VF6402 Bottom Boot Non-Uniform SST38VF6403 Boot Non-Uniform SST38VF6404 3FE000H-3FFFFFH
T2.0 1309
Hardware Reset (RST#) RST# provides hardware method resetting device read array data. When RST# held least TRP, in-progress operation will terminate return Read mode. When internal Program/Erase operation progress, minimum period TRHR required after RST# driven high before valid Read take place. Figure more information. interrupted Erase Program operation must re-initiated after device resumes normal operation mode ensure data integrity. Software Data Protection (SDP) SST38VF6401/6402/6403/6404 devices implement JEDEC approved Software Data Protection (SDP) scheme data alteration operations, such Program Erase. These devices shipped with Software Data Protection permanently enabled. Table specific software command codes. Program operations require inclusion threebyte sequence. three-byte load sequence used initiate Program operation, providing optimal protection from inadvertent Write operations. Erase operations similar Program, six-byte load sequence required Erase operations. During command sequence, invalid commands will abort device read mode within TRC. contents DQ15-DQ8 VIH, other value, during command sequence. SST38VF6401/6402/6403/6404 devices provide Bypass Mode, which allows reduced Program Erase command sequence lengths. this mode, portion Program Erase command sequences omitted. "Bypass Mode" page further details.
Size
Address Range 000000H-007FFFH 3F8000H-3FFFFFH 000000H-001FFFH
Common Flash Memory Interface (CFI)
SST38VF6401/6402/6403/6404 contain Common Flash Memory Interface (CFI) information that describes characteristics device. order enter Query mode, system either write one-byte sequence using standard Query Entry command, three-bye sequence using Query Entry command. comparison these commands shown Table Once device enters Query mode, system read data addresses given Tables through system must write Exit command return Read mode. Note that Exit command ignored during internal Program Erase operation. Table software command codes, Figures timing waveform, Figures flowcharts.
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Program Erase operations prevented Boot Block when low. left floating, internally held high pull-up resistor. When high, Boot Block unprotected, which allows Program Erase operations that area.
©2009 Silicon Storage Technology, Inc.
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
Product Identification
Product Identification mode identifies devices SST38VF6401, SST38VF6402, SST38VF6403, SST38VF6404, manufacturer SST. Table specific address data information. Product Identification mode accessed through software operations. software Product Identification operations identify part, useful when using multiple manufacturers same socket. details, Table software operation, Figure software Entry Read timing diagram, Figure software Entry command sequence flowchart. TABLE Product Identification
Address Manufacturer's Device SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404 0001H 0001H 0001H 0001H 536B 536A 536D 536C
T3.0 1309
Security
SST38VF6401/6402/6403/6404 devices offer Security feature. Secure space divided into segments factory programmed segment user programmable word segment. Table address information. first segment programmed locked contains Unique which uniquely identifies device. user segment left unprogrammed customer program desired. TABLE Address Range
Size Unique User Data bits Address 000H 007H 100H 1FFH
T4.1 1309
0000H
user segment Security programmed several ways. smaller datasets, Security Word-Program command word-programming. program larger sets data more quickly, Entry command enter Secure space. Once Secure space, Write-Buffer Programming Bypass Mode feature. Note that Word-Programming command also used while this mode. detect end-of-write read toggle bits. Data# Polling detect Write. Once programming complete, lock issuing User Program Lock-Out command programming with Program command. Locking disables corruption this space. Note that regardless whether locked, segments erased. Secure space queried executing threebyte command sequence with Enter command (88H) address 555H last byte sequence. exit this mode, Exit command should executed. Refer Table software commands Figures flow charts.
While Product Identification mode, Read Block Protection Status command determines block protected. status returned indicates block been protected, does differentiate between Volatile Block Protection Non-Volatile Block Protection. Table further details. Read-Irreversible Block-Lock Status command indicates Irreversible Block Command been issued. then Irreversible Lock command been previously issued. order return standard Read mode, software Product Identification mode must exited. exit accomplished issuing software Exit command sequence, which returns device Read mode. Table software command codes, Figure timing waveform, Figures flowcharts.
Bypass Mode
Bypass mode shortens time needed issue program erase commands reducing these commands write cycles each. After using Bypass Entry command enter Bypass mode, only Bypass Word-Program, Bypass Sector Erase, Bypass Block Erase, Bypass Chip Erase, Erase-Suspend, Erase-Resume commands available. Bypass Exit command exits Bypass mode. Table further details. Entering Bypass Mode while already Erase-Suspend limits available commands. "Erase-Suspend/EraseResume Commands" page more information.
©2009 Silicon Storage Technology, Inc.
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Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
Protection Settings Register (PSR)
Protection Settings Register (PSR) user-programmable register that allows further customization SST38VF6401/6402/6403/6404 protection features. 16-bit provides four Time Programmable (OTP) bits users, each which programmed individually. However, once programmed `0', value cannot changed back `1'. other bits reserved. Table definition 16-bits PSR. TABLE Definitions
Default from Factory FFFh
Individual Block Protection
SST38VF6401/6402/6403/6404 provide methods Individual Block protection: Volatile Block Protection Non-Volatile Block Protection. Data protected blocks cannot altered. Volatile Block Protection Volatile Block Protection feature provides faster method than Non-Volatile Protection protect unprotect KWord blocks. Each block it's Volatile Protection (VPB). SST38VF6401/2, KWord boot block also VPB. SST38VF6403/4 devices, each KWord sectors KWord boot area it's VPB. After using Volatile Block Protection Mode Entry command enter Volatile Block Protection mode, individual VPBs reset with Set/Clear, read with Status Read. `0', then block protected from Program Erase. `1', then block unprotected. Volatile Block Protection Exit command must issued exit Volatile Block Protection mode. Table further details commands Figure flow chart. device experiences hardware reset power cycle, VPBs return their default state determined user-programmable PSR. `0', then VPBs default (protected). `1', then VPBs default (unprotected). Non-Volatile Block Protection
T5.0 1309
DQ15DQ5
Definition Reserved power-up hardware reset state protected unprotected Reserved Password mode Password only mode Pass-Through mode Pass-Through mode Pass-Through only mode Pass-Through mode Lock locked unlocked
Note that DQ4, DQ2, DQ1, have programmed same time. addition, cannot both programmed `0'. valid combinations states shown Table TABLE Valid Combinations
Combination DQ2, DQ2, DQ2, DQ2, Definition Pass-Through mode (factory default) Pass-Through only mode Password only mode Allowed
T6.0 1309
Non-Volatile Block Protection feature provides protection individual blocks using Non-Volatile Protection Bits (NVPBs). Each block it's Non-Volatile Protection Bit. SST38VF6401/2, KWord boot block also it's NVPB. SST38VF6403/4, each KWord sector 8KWord boot area it's NVPB. NVPBs come from factory `1', unprotected state. Non-Volatile Block Protection Mode Entry command enter Non-Volatile Block Protection mode. Once this mode, NVPB Program command used protect individual blocks setting individual NVPBs `0'. time needed program NVPB times TBP, which maximum 20µs. NVPB Status Read command used check protection state individual NVPB. change NVPB `1', unprotected state, NVPB must erased using NVPBs Erase command. This command erases NVPBs `1'. NVPB Program
accessed issuing Entry command. Users then Program Read commands. Exit command must issued leave this mode. Table further details.
©2009 Silicon Storage Technology, Inc.
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Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
Data Sheet should used NVPBs blocks that protected before exiting Non-Volatile Block Protection mode. Table Figure further details. Upon power cycle hardware reset, NVPBs retain their states. Memory areas that protected using NonVolatile Block Protection remain protected. NVPB Program NVPBs Erase commands permanently disabled once Irreversible Block Lock command issued. "Irreversible Block Locking" page further information. Pass-Through only mode programming Password Mode (DQ2, 0,1) Password Mode, Global Lock Global Lock command, power-down power-up sequence, hardware reset (RST# Select Password only mode programming Note that when Program command issued Password mode, Global Lock automatically `0'. contrast Pass-Through Mode, Password mode, only clear Global Lock submit correct 64-bit password using Submit Password command Password Commands Mode. words password submitted order long each section password matched with correct address. After entire password submitted, device takes approximately verify password. subsequent Submit Password command cannot issued until this verification time elapsed. 64-bit password must chosen user before programming bits choose Password Mode. default password device from factory FFFFFFFFFFFFFFFFh. Enter Password Commands mode issuing Password Commands Entry command. Then, Password Program command program desired password. caution when programming password because there method reset password FFFFFFFFFFFFFFFFh. Once password been `0', cannot changed back `1'. Table further details about Password-related commands. password read using Password Read command verify desired password been programmed. recommends testing password before permanently choosing Password Mode. test password, following: Enter Global Lock NVPBs mode. Global Lock `0', verify value. Exit Global Lock NVPBs mode. Enter Password Commands mode. Submit 64-bit password with Submit Password command. Wait device verify password. Exit Password Commands mode. Re-enter Global Lock NVPBs mode
©2009 Silicon Storage Technology, Inc. S71309-05-000 07/09
Advanced Protection
SST38VF6401/6402/6403/6404 provide Advanced Protection features that allow users implement conditional access NVPBs. Specifically, Advanced Protection uses Global Lock protect NVPBs. Global Lock then NVPBs states frozen cannot modified mode. Global Lock `1', then NVPBs modified Non-Volatile Block Protection mode. After using Global Lock NVPBs Entry command enter Global Lock NVPBs mode, Global Lock activated issuing Global Lock command, which sets Global Lock `0'. Global Lock cannot with this command. status read with Global Lock Status command. Global Lock NVPBs Exit command exit Global Lock NVPBs mode. Table Figure further details. steps used change Global Lock from to'1,' allow access NVPBs, depend whether device been Pass-Through Password mode. When using Advanced Protection, select either Pass-Through only mode Password only mode programming bits PSR. Although factory default Pass-Through mode (DQ2 user should explicitly chose either Pass-Through only mode (DQ2 Password only mode (DQ2 Keeping SST38VF6401/6402/6403/6404 factory default Pass-Through mode leaves device open unauthorized changes PSR. "Protection Settings Register (PSR)" page more information about PSR. Pass-Through Mode (DQ2, 1,0) Pass-Through Mode allows Global Lock state cleared power-down power-up sequence hardware reset (RST# password required Pass-Through mode. Global Lock `0', Global Lock command while Global Lock NVPBs mode. Select
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
Data Sheet Read Global Lock with Global Lock Status Read command. Global Lock should `1'. After verifying password, program bits explicitly choose Password mode. Once Password mode been selected, Password Read Password Program commands permanently disabled. There longer method reading modifying password. addition, unable read modify password. Password Read command issued while Password mode, data presented each word password FFFFh. Password Mode explicitly chosen PSR, then password still read modified. Therefore, strongly recommends that users explicitly choose Password Mode PSR.
Irreversible Block Locking
SST38VF6401/6402/6403/6404 provides Irreversible Block Locking, feature that allows users customize size Read-Only Memory (ROM) device provides more flexibility than One-Time Programmable (OTP) memory. Applying Irreversible Block Locking turns user-selected memory areas into permanently disabling Program Erase operations these chosen areas. area that becomes cannot changed back Flash. memory blocks main memory, including boot blocks, irreversibly locked. non-uniform boot block devices (SST38VF6403 SST38VF6404) each sector boot area irreversibly locked. desired, blocks main memory irreversibly locked. Irreversible Block Locking following: Global Lock should `1'. Irreversible Block Lock command disabled when Global Lock `0'. Enter Non-Volatile Block Protection mode. NVPB Program command protect only blocks that changed into ROM. Exit Non-Volatile Block Protection mode. Issue Irreversible Block Lock command (see Table details). Irreversible Block Lock command only used once. Issuing command after first time effect device. Important: Once Irreversible Block Lock command used, state NVPBs longer changed overridden. Therefore, following features longer have effect device: Global Lock NVPBs feature Password feature NVPB Program command NVPB Erase command
addition, effect memory boot block area that been irreversibly locked. verify whether Irreversible Block Lock command already been issued, enter Product mode read address 5FEH. then Irreversible Block Lock already been executed. When using this feature determine specific block ROM, NVPB Status Read.
©2009 Silicon Storage Technology, Inc.
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Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
FUNCTIONAL BLOCK DIAGRAM
X-Decoder
SuperFlash Memory
Memory Address
Address Buffer Latches Y-Decoder
RESET#
Buffers Data Latches Control Logic DQ15
RY/BY#
1309 B1.1
FIGURE Functional Block Diagram
©2009 Silicon Storage Technology, Inc.
S71309-05-000
07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
ASSIGNMENTS
RST# RY/BY#
Standard Pinout View
DQ15 DQ14 DQ13 DQ12 DQ11 DQ10
1309 48-tsop P1.0
FIGURE Assignments 48-lead TSOP
VIEW (balls facing down)
DQ15 DQ14 DQ13 DQ12 DQ10 DQ11
1309 48-tfbga P1.0
RST# RY/BY#
FIGURE assignments 48-ball TFBGA
©2009 Silicon Storage Technology, Inc.
S71309-05-000
07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
Data Sheet TABLE Description
Symbol AMS1-A0 Name Address Inputs Functions provide memory addresses. During Sector-Erase AMS-A12 address lines will select sector. During Block-Erase AMS-A15 address lines will select block. output data during Read cycles receive input data during Write cycles. Data internally latched during Write cycle. outputs tri-state when high. protect top/bottom boot block from Erase/Program operation when grounded. indicate when device actively programming erasing. reset return device Read mode. activate device when low. gate data output buffers. control Write operations. provide power supply voltage: 2.7-3.6V Unconnected pins.
T7.0 1309
DQ15-DQ0
Data Input/output
RY/BY# RST#
Write Protect Ready/Busy Reset Chip Enable Output Enable Write Enable Power Supply Ground Connection
Most significant address SST38VF6401/6402/6403/6404
©2009 Silicon Storage Technology, Inc.
S71309-05-000
07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
MEMORY MAPS
TABLE SST38VF6401and SST38VF6402 Memory Maps SST38VF6401
Block1,2 Sectors3 S0-S7 S8-S15 S16-S23 S24-S31 S32-S39 S40-S47 S48-S55 S56-S63 B119 follow same pattern B120 S960-S967 B121 S968-S975 B122 S976-S983 B123 S984-S991 B124 S992-S999 B125 S1000-S1007 B126 S1008-S1015 B127 S1016-S1023 Address A21-A124 0000000XXX 0000001XXX 0000010XXX 0000011XXX 0000100XXX 0000101XXX 0000110XXX 0000111XXX 1111000XXX 1111001XXX 1111010XXX 1111011XXX 1111100XXX 1111101XXX 1111110XXX 1111111XXX VPB5 NVPB5 WP#6
SST38VF6402
Block1,2 Sectors3 S0-S7 S8-S15 S16-S23 S24-S31 S32-S39 S40-S47 S48-S55 S56-S63 B119 follow same pattern B120 S960-S967 B121 S968-S975 B122 S976-S983 B123 S984-S991 B124 S992-S999 B125 S1000-S1007 B126 S1008-S1015 B1277 S1016-S1023
Address A21-A124 0000000XXX 0000001XXX 0000010XXX 0000011XXX 0000100XXX 0000101XXX 0000110XXX 0000111XXX 1111000XXX 1111001XXX 1111010XXX 1111011XXX 1111100XXX 1111101XXX 1111110XXX 1111111XXX
VPB5
NVPB5
WP#7
T8.0 1309
Each block, B0-B127 32KWord. Each block consists eight sectors. Each sector, S0-S1023 4KWord. Block Address (BA) A15; Sector Address (SA) Each block associated NVPB. Block boot block. Block B127 boot block.
©2009 Silicon Storage Technology, Inc.
S71309-05-000
07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
Data Sheet TABLE SST38VF6403and SST38VF6404 Memory Maps SST38VF6403
Block1,2 B05,6 Sectors3 B120 B121 B122 B123 B124 B125 B126 B127 S8-S15 S16-S23 S24-S31 S32-S39 S40-S47 S48-S55 S56-S63 S960-S967 S968-S975 S976-S983 S984-S991 S992-S999 S1000-S1007 S1008-S1015 S1016-S1023 Address A21-A124 0000000000 0000000001 0000000010 0000000011 0000000100 0000000101 0000000110 0000000111 0000001XXX 0000010XXX 0000011XXX 0000100XXX 0000101XXX 0000110XXX 0000111XXX 1111000XXX 1111001XXX 1111010XXX 1111011XXX 1111100XXX 1111101XXX 1111110XXX 1111111XXX VPB5 NVPB5 WP#6
B119 follow same pattern
SST38VF6404
Block1,2 B120 B121 B122 B123 B124 B125 B126 Sectors3 S0-S7 S8-S15 S16-S23 S24-S31 S32-S39 S40-S47 S48-S55 S56-S63 S960-S967 S968-S975 S976-S983 S984-S991 S992-S999 S1000-S1007 S1008-S1015 Address A21-A124 0000000XXX 0000001XXX 0000010XXX 0000011XXX 0000100XXX 0000101XXX 0000110XXX 0000111XXX 1111000XXX 1111001XXX 1111010XXX 1111011XXX 1111100XXX 1111101XXX 1111110XXX VPB5 NVPB5 WP#7
S71309-05-000 07/09
B119 follow same pattern
©2009 Silicon Storage Technology, Inc.
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
Data Sheet TABLE SST38VF6403and SST38VF6404 Memory Maps (Continued)
Block1,2 B1275, Sectors3 S1016 S1017 S1018 S1019 S1020 S1021 S1022 S1023
Address A21-A124 1111111000 1111111001 1111111010 1111111011 1111111100 1111111101 1111111110 1111111111
VPB5
NVPB5
WP#7
T9.0 1309
Each block, B0-B127 32KWord. Each block consists eight sectors. Each sector, S0-S1023 4KWord. Block Address (BA) A15; Sector Address (SA) Each block associated NVPB, except some blocks SST39VF6403 SST39VF6404. SST39VF6403, Block does have single NVPB KWords. Instead, each sector KWord) Block NVPB. SST39VF6404, Block B127 does have single NVPB KWords. Instead, each sector KWord) Block B127 NVPB. 8KWord boot block consists Block 8KWord boot block consists S1022 S1023 Block B127.
©2009 Silicon Storage Technology, Inc.
S71309-05-000
07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
OPERATIONS
TABLE Operation Modes Selection
Mode Read Program Erase Standby Write Inhibit Product Identification Reset Software Mode RST# VIL/VIH1 VIL/VIH
DOUT High High DOUT High DOUT High Table
Address Sector block address, Chip-Erase Table
T10.0 1309
when programming erasing outside bootblock. must when programming erasing inside bootblock area. VIH, other value.
©2009 Silicon Storage Technology, Inc.
S71309-05-000
07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
Data Sheet TABLE Software Command Sequence
Command Sequence Cycle Addr1 555H Data2 Data Data0 2AAH Data1 555H Data2 Data3 Data Cycle Addr1 Data2 Cycle Addr1 Data2 Cycle Addr1 Data2 Cycle Addr1 Data2 Cycle Addr1 Data2 Cycle Addr1 Data2
Read3 Page Read3
Word-Program Write-to-Buffer4 Program Bufferto- Flash Write-to-Buffer Abort-Reset Bypass Mode5 Bypass Mode Entry
Bypass WordProgram
Write-Buffer Programming 555H 555H 2AAH 555H 2AAH Data Data Data
555H XXXH XXXH XXXH XXXH XXXH
2AAH 555H XXXH
Data
555H
Bypass Sector Erase Bypass Block Erase Bypass Chip Erase Bypass Mode Exit Erase Related Sector-Erase Block-Erase6 Chip-Erase Erase Suspend Erase Resume Security Entry7
555H 555H 555H XXXH XXXH
2AAH 2AAH 2AAH
555H 555H 555H
555H 555H 555H
2AAH 2AAH 2AAH
555H
555H 555H 555H
Data
2AAH
555H
Read3,8
Exit Software Exit /CFI Exit/ Exit9 Software Exit /CFI Exit/ Exit9 User Security Word-Program10 User Security Program Lock-Out
2AAH 2AAH
555H 555H
555H
2AAH
555H
Data
555H
2AAH
555H
0000H
©2009 Silicon Storage Technology, Inc.
S71309-05-000
07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
Data Sheet TABLE Software Command Sequence (Continued)
Command Sequence Cycle Addr1 Data2 Cycle Addr1 Data2 Cycle Addr1 Data2 Cycle Addr1 Data2 Cycle Addr1 Data2 Cycle Addr1 Data2 Cycle Addr1 Data2
Product Identification Software Entry11 555H
BAX0213
Data Data14
2AAH
555H
Manufacturer ID3,12 Device ID3,12 Read Block Protection Status3 Read Irreversible Block Lock Status3 Read Global Lock Status3
Software Exit /CFI Exit/SEC Exit Software Exit /CFI Exit/SEC Exit9
5FEH
Data15
9FFH
Data16
555H
2AAH
555H
Volatile Block Protection Volatile Block Protection Mode Entry Volatile Protection (VPB) Set/Clear 555H 2AAH 555H
BAX17
Data18
Status Read3
Volatile Block Protection Mode Exit
Data18
Non-Volatile Block Protection Non-Volatile Block Protection Mode Entry Non-Volatile Protect (NVPB) Program Non-Volatile Protect Bits (NVPB) Erase19 555H 2AAH 555H
BAX17
NVPB Status Read3
Non-Volatile Block Protection Mode Exit
BAX17
Data18
©2009 Silicon Storage Technology, Inc.
S71309-05-000
07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
Data Sheet TABLE Software Command Sequence (Continued)
Command Sequence Cycle Addr1 Data2 Cycle Addr1 Data2 Cycle Addr1 Data2 Cycle Addr1 Data2 Cycle Addr1 Data2 Cycle Addr1 Data2 Cycle Addr1 Data2
Global Lock NVPBs Global Lock NVPBs Entry Global Lock 555H XXXH Data16 2AAH 555H
Global Lock Status Read3
Global Lock NVPBs Exit
Password Commands Password Commands Mode Entry Password Program20 555H 2AAH 555H
PWAX
PWDX
PWAX
PWDx
Password Read3
Submit Password21 Password Commands Mode Exit
PWD0
PWD1
PWD2
PWD3
Program Settings Register (PSR) Entry Program
555H
Data
2AAH XXXH
Data
555H
Read3
Exit Query Entry23 Query Entry23 Software Exit /CFI Exit/SEC Exit9 Software Exit/CFI Exit/ Exit9
555H 555H
2AAH 2AAH 555H 555H
Irreversible Block Lock Irreversible Block Lock24 555H 2AAH 555H
T11.0 1309
Address format A10-A0 (Hex). Addresses A11- VIH, other value, SST38VF6401/6402/6403/6404 command sequence. DQ15-DQ8 VIH, other value, command sequence read commands Bold Italics. Total number cycles this command sequence depends number words written buffer. Additional words written repeating Write Cycle Address (WAX) values Write Cycle later must have same A21-A4 values Write Cycle Word Count. value number words written into buffer, minus Maximum value (i.e. Hex) Erase-Suspend Erase-Resume commands also available Bypass Mode.
©2009 Silicon Storage Technology, Inc.
S71309-05-000
07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
SST39VF6403, Sector-Erase Block-Erase used erase sectors S1016 S1023. address SAx. Block Erase cannot used erase 32kW Block B127. SST39VF6404, Sector-Erase Block-Erase used erase sectors address SAx. Block Erase cannot used erase 32kW Block Once mode, Word-Program, Write-Buffer Programming, Bypass Word-Program features used program area. Unique read with (Address range 000000H 000007H), User portion read with (Address range 000100H 0001FFH). Lock-out Status read with A7-A0 FFH. Unlocked: Locked: Lock status also checked reading PSR. Both Software Exit operations equivalent bits locked, then user-programmable portion programmed over previously unprogrammed bits (Data using mode again (bits programmed cannot reversed `1'). Valid Word-Addresses user-programmable portion from 000100H-0001FFH. device does remain Software Product Mode powered down. With AMS-A1 Manufacturer 00BFH, read with SST38VF6401 Device 536B, read with SST38VF6402 Device 536A, read with SST38VF6403 Device 536D, ready with SST38VF6404 Device 536C, read with BAX02: AMS-A15 Block Address; A14-A8 xxxxxx; A7-A0 Data unprotected block; Data protected block. means Irreversible Block Lock command been previously used. means Irreversible Block Lock command been used. means that Global Lock locked. means that Global Lock unlocked. Non-Uniform Boot Block devices (i.e. KWord size), boot area, Sector Address (sector size KWord). means protected; means unprotected Erases NVPBs (unprotected) Entire two-bus cycle sequence must entered each portion password. Entire password sequence required validation. word order doesn't matter long Address Data pair match. Reserved register bits (DQ15-DQ5 DQ3) must during program. Query Entry Query Entry equivalent. Both allow access same tables. Global Lock must before executing this command. Note: Table uses following abbreviations: Don't care (VIL VIH, other value. Sector Address; uses AMS-A12 address lines BAX= Block Address; uses AMS-A15 address lines Word Address Word Count PWAX Password Address; PWAX PWA0, PWA1, PWA2 PWA3; used select each 16-bit portion password PWDX Password Data; PWDX PSWD0, PWD1, PWD2, PWD3 Most significant Address
©2009 Silicon Storage Technology, Inc.
S71309-05-000
07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
Data Sheet TABLE Protection Priority Main Array
NVPB1 protect unprotect
protect unprotect
VPB1 protect unprotect
Protection State Block protected protected unprotected
T12.0 1309
TABLE Query Identification String1 SST38VF6401/6402/6403/6404
Address Data 0051H 0052H 0059H 0002H 0000H 0040H 0000H 0000H 0000H 0000H 0000H
T13.0 1309
Description Query Unique ASCII string "QRY"
Primary command Address Primary Extended Table Alternate command (00H none exists) Address Alternate Extended Table (00H none exits)
Refer publication more details.
©2009 Silicon Storage Technology, Inc.
S71309-05-000
07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
Data Sheet TABLE System Interface Information SST38VF6401/6402/6403/6404
Address Data 0027H 0036H 0000H 0000H 0003H 0003H 0004H 0005H 0001H 0003H 0001H 0001H Description (Program/Erase) DQ7-DQ4: Volts, DQ3-DQ0: millivolts (Program/Erase) DQ7-DQ4: Volts, DQ3-DQ0: millivolts min. (00H pin) max. (00H pin) Typical time Word-Program Typical time min. size buffer program (00H supported) Typical time individual Sector/Block-Erase Typical time Chip-Erase Maximum time Word-Program times typical Maximum time buffer program times typical Maximum time individual Sector/Block-Erase times typical Maximum time Chip-Erase times typical
T14.0 1309
TABLE Device Geometry Information SST38VF6401/6402/6403/6404
Address Data 0017H 0001H 0000H 0005H 0000H 0002H 00FFH 0003H 0000H 0001H 007FH 0000H 0000H 0001H Bytes KBytes/block (0100H 256)
T15.1 1309
Description Device size Bytes (17H MByte) Flash Device Interface description; 0001H x16-only asynchronous interface Maximum number bytes multi-byte write (00H supported) Number Erase Sector/Block sizes supported device Sector Information Number sectors; 256B sector size) 2047 2048 sectors (03FFH 1023) Bytes KBytes/sector (0100H Block Information Number blocks; 256B block size) =127 blocks (007FH 127)
©2009 Silicon Storage Technology, Inc.
S71309-05-000
07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
Data Sheet TABLE Primary Vendor-Specific Extended Information SST38VF6401/6402/6403/6404
Address Data 0050H 0052H 0049H FFFFH FFFFH 0000H 0002H 0001H 0000H 0008H 0000H 0000H 0001H 0000H 0000H 00XXH Reserved Reserved Reserved Erase Suspend supported, Only read during Erase Suspend, Read Program during Erase Suspend. Individual Block Protection supported, Supported Reserved Protection 0008H Advanced Simultaneous Operation supported Burst Mode supported Page Mode supported, Word page. Acceleration Supply Minimum supported Acceleration Supply Maximum supported Bottom Boot Block KWord Bottom Boot KWord Boot Uniform KWord) Bottom Boot Uniform KWord) Boot Program Suspend Supported, Supported
T16.1 1309
Description Query-unique ASCII string "PRI"
0000H
©2009 Silicon Storage Technology, Inc.
S71309-05-000
07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
Data Sheet Absolute Maximum Stress Ratings (Applied conditions greater than those listed under "Absolute Maximum Stress Ratings" cause permanent damage device. This stress rating only functional operation device these conditions conditions greater than those defined operational sections this data sheet implied. Exposure absolute maximum stress rating conditions affect device reliability.) Temperature Under Bias -55°C +125°C Storage Temperature -65°C +150°C Voltage Ground Potential -0.5V VDD+0.5V Transient Voltage (<20 Ground Potential -2.0V VDD+2.0V Voltage Ground Potential -0.5V 12.5V Voltage RST# Ground Potential -0.5V 12.5V Voltage Ground Potential -0.5V 12.5V Package Power Dissipation Capability 25°C) 1.0W Surface Mount Solder Reflow Temperature 260°C seconds Output Short Circuit Current1
Outputs shorted more than second. more than output shorted time.
Operating Range
Range Commercial Industrial Ambient Temp +70°C -40°C +85°C 2.7-3.6V 2.7-3.6V
Conditions Test
Input Rise/Fall Time Output Load Figures
©2009 Silicon Storage Technology, Inc.
S71309-05-000
07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
Power-Up Specifications
functionalities specifications specified ramp rate faster than less than ms). ramp rate slower than hardware reset required. recommended power-up RESET# high time should greater than ensure proper reset. Table 17and Figure more information. TABLE Recommended System Power-up Timings
Symbol TPU-READ1 TPU-WRITE
Parameter Power-up Read Operation Power-up Erase/Program Operation
Minimum
Units
T17.0 1309
This parameter measured only initial qualification after design process change that could affect this parameter.
TPU-READ
RESET#
TRHR 50ns
1309 F37.0
FIGURE Power-Up Diagram
©2009 Silicon Storage Technology, Inc.
S71309-05-000
07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
Characteristics
TABLE Operating Characteristics 2.7-3.6V1
Limits Symbol Parameter Power Supply Current Read3 Intra-Page Read Intra-Page Read Program Erase Program-Write-Buffer-toFlash IALP ILIW VILC VIHC Standby Current Auto Power Input Leakage Current Input Leakage Current RST# Output Leakage Current Input Voltage Input Voltage (CMOS) Input High Voltage Input High Voltage (CMOS) Output Voltage Output High Voltage VDD-0.2 0.7VDD VDD-0.3 Units Test Conditions Address input=VILT/VIHT2, VDD=VDD CE#=VIL, OE#=WE#=VIH CE#=VIL, OE#=WE#=VIH CE#=VIL, OE#=WE#=VIH CE#=WE#=VIL, OE#=VIH CE#=WE#=VIL, OE#=VIH CE#=VIHC, VDD=VDD CE#=VILC, VDD=VDD inputs=VSS VDD, WE#=VIHC VIN=GND VDD, VDD=VDD WP#=GND RST#=GND VOUT=GND VDD, VDD=VDD VDD=VDD VDD=VDD VDD=VDD VDD=VDD IOL=100 VDD=VDD IOH=-100 VDD=VDD
T18.0 1309
Typical conditions Active Current shown front page data sheet average values 25°C (room temperature), 100% tested. Figure current listed typically less than 2mA/MHz, with VIH. Typical
TABLE Capacitance 25°C, Mhz, other pins open)
Parameter CI/O
Description Capacitance Input Capacitance
Test Condition VI/O
Maximum
T19.0 1309
CIN1
This parameter measured only initial qualification after design process change that could affect this parameter.
TABLE Reliability Characteristics
Symbol NEND TDR1 ILTH1
Parameter Endurance Data Retention Latch
Minimum Specification 100,000
Units Cycles Years
Test Method JEDEC Standard A117 JEDEC Standard A103 JEDEC Standard
T20.0 1309
This parameter measured only initial qualification after design process change that could affect this parameter. NEND endurance rating qualified 100,000 cycles minimum block.
©2009 Silicon Storage Technology, Inc.
S71309-05-000
07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
CHARACTERISTICS
TABLE Read Cycle Timing Parameters 2.7-3.6V
Symbol TPACC TCLZ1 TOLZ1 TCHZ1 TOHZ1 TOH1 TRP1 TRHR1 TRYE TRY1 TRPD1 TRB1
Parameter Read Cycle Time Chip Enable Access Time Address Access Time Page Access Time Output Enable Access Time Active Output Active Output High High-Z Output High High-Z Output Output Hold from Address Change RST# Pulse Width RST# High before Read RST# Read Mode RST# Read Mode during Program Erase algorithms. RST# Input Standby mode Output high
Units
T21.0 1309
This parameter measured only initial qualification after design process change that could affect this parameter. This parameter applies Sector-Erase, Block-Erase, Program operations. This parameter does apply Chip-Erase operations.
©2009 Silicon Storage Technology, Inc.
S71309-05-000
07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
Data Sheet TABLE Program/Erase Cycle Timing Parameters
Symbol TWBP TOES TOEH TWPH2 TCPH2
Parameter Word-Program Time Program Buffer-to-Flash Time Address Setup Time Address Hold Time Setup Time Hold Time High Setup Time High Hold Time Pulse Width Pulse Width Pulse Width High Pulse Width High Data Setup Time Data Hold Time Software Volatile Protect, Non-Volatile Protect, Global Lock Bit, Password mode, Lock Bit, Bypass Entry, Exit Times Sector-Erase Block-Erase Chip-Erase High High
Units
TIDA2 TSCE TBUSY
T22.0 1309
Effective programming time word 16-words programmed during this operation. This parameter measured only initial qualification after design process change that could affect this parameter.
©2009 Silicon Storage Technology, Inc.
S71309-05-000
07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
ADDRESS AMS-0 DQ15-0 HIGH-Z RY/BY# TCLZ TOLZ DATA VALID
TOHZ TCHZ DATA VALID HIGH-Z
1309 F03.1
Note: Most significant address SST38VF6401/6402/6403/6404
FIGURE Read Cycle Timing Diagram
ADDRESS AMS-2
Same Page
DQ15-0
TPACC
TPACC TPACC
DATA VALID DATA VALID DATA VALID
DATA VALID
RY/BY#
1309 F24.3
Note: Most significant address SST38VF6401/6402/6403/6404 either
FIGURE Page Read Timing Diagram
©2009 Silicon Storage Technology, Inc.
S71309-05-000
07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
INTERNAL PROGRAM OPERATION STARTS ADDRESS AMS-0 DQ15-0 XXAA RY/BY# TBUSY Note: Most significant address SST38VF6401/6402/6403/6404 must held proper logic state (VIL VIH) prior after command sequence. VIH, other value.
1309 F04.1
ADDR
TWPH
XX55
XXA0
DATA WORD (ADDR/DATA)
FIGURE Controlled Program Cycle Timing Diagram
INTERNAL PROGRAM OPERATION STARTS ADDRESS AMS-0 DQ15-0 XXAA RY/BY# TBUSY Note: Most significant address 1309 F05.1 SST38VF6401/6402/6403/6404 must held proper logic state (VIL VIH) prior after command sequence. VIH, other value. XX55 XXA0 DATA WORD (ADDR/DATA) TCPH ADDR
FIGURE Controlled Program Cycle Timing Diagram
©2009 Silicon Storage Technology, Inc. S71309-05-000 07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
FILL WRITE BUFFER WITH DATA ADDRESS AMS-0
DQ15-0
XXAA
XX55
XX25
DATA
DATAn
RY/BY#
1309 F34.2
Note: Block Address Word Address Word Count DATAn Data VIH, other value.
FIGURE Controlled Write-Buffer Cycle Timing Diagram
TWBP ADDRESS AMS-0
DQ15-0 TBusy RY/BY#
1309 F35.1
Note: Block Address
FIGURE Controlled Program-Write-Buffer-to-Flash Cycle Timing Diagram
©2009 Silicon Storage Technology, Inc.
S71309-05-000
07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
ADDRESS AMS-0 TOEH TOES
DATA
DATA#
DATA#
DATA
1309 F06.1
Note: Most significant address SST38VF6401/6402/6403/6404
FIGURE Data# Polling Timing Diagram
ADDRESS AMS-0 TOEH TOES
READ CYCLES WITH SAME OUTPUTS 1309 F07.0
Note: Most significant address SST38VF6401/6402/6403/6404
FIGURE Toggle Bits Timing Diagram
©2009 Silicon Storage Technology, Inc.
S71309-05-000
07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
SIX-BYTE CODE CHIP-ERASE ADDRESS AMS-0
TSCE
DQ15-0
XXAA
XX55
XX80
XXAA
XX55
XX10 TBUSY
RY/BY#
Note: This device also supports controlled Chip-Erase operation signals interchangeable long minimum timings met. (See Table Most significant address SST38VF6401/6402/6403/6404 must held proper logic state (VIL VIH) prior after command sequence. VIH, other value.
1309 F08.1
FIGURE Controlled Chip-Erase Timing Diagram
SIX-BYTE CODE BLOCK-ERASE
ADDRESS AMS-0
DQ15-0
XXAA
XX55
XX80
XXAA
XX55
XX30 TBusy
RY/BY#
Note: This device also supports controlled Block-Erase operation signals interchangeable long minimum timings met. (See Table Block Address Most significant address SST38VF6401/6402/6403/6404 must held proper logic state (VIL VIH) prior after command sequence. VIH, other value.
1309 F09.1
FIGURE Controlled Block-Erase Timing Diagram
©2009 Silicon Storage Technology, Inc. S71309-05-000 07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
SIX-BYTE CODE SECTOR-ERASE
ADDRESS AMS-0
DQ15-0
XXAA
XX55
XX80
XXAA
XX55
XX50 TBUSY
RY/BY#
1309 F10.1
Note: This device also supports controlled Sector-Erase operation signals interchangeable long minimum timings met. (See Table Sector Address Most significant address SST38VF6401/6402/6403/6404 must held proper logic state (VIL VIH) prior after command sequence. VIH, other value.
FIGURE Controlled Sector-Erase Timing Diagram
©2009 Silicon Storage Technology, Inc.
S71309-05-000
07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
Three-Byte Sequence Software Entry ADDRESS AMS-0 0000 0001
TWPH DQ15-0 XXAA XX55 XX90 00BF Device
1309 F11.0
TIDA
Note: Device 536B SST38VF6401, 536A SST38VF6402, 536D SST38VF6403, 536C SST38VF6404 Most significant address SST38VF6401/6402/6403/6404 must held proper logic state (VIL VIH) prior after command sequence. VIH, other value.
FIGURE Software Entry Read
ADDRESS AMS-0
DQ15-0
1309 F12.2
TIDA
Note: must held proper logic state (VIL VIH) prior after command sequence. Most significant address SST38VF6401/6402/6403/6404 VIH, other value.
FIGURE Query Entry Read
©2009 Silicon Storage Technology, Inc.
S71309-05-000
07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
THREE-BYTE SEQUENCE SOFTWARE EXIT RESET
ADDRESS AMS-0
DQ15-0
XXAA
XX55
XXF0 TIDA
TWHP
1309 F13.0
Note: must held proper logic state (VIL VIH) prior after command sequence. Most significant address SST38VF6401/6402/6403/6404 VIH, other value.
FIGURE Software Exit/CFI Exit
THREE-BYTE SEQUENCE ENTRY ADDRESS AMS-0
TWPH DQ15-0 XXAA XX55 XX88
1309 F14.1
TIDA
Note: Most significant address SST38VF6401/6402/6403/6404 must held proper logic state (VIL VIH) prior after command sequence. VIH, other value.
FIGURE Entry
©2009 Silicon Storage Technology, Inc.
S71309-05-000
07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
RST# TRHR CE#/OE#
RY/BY#
1309 F15.2
FIGURE RST# Timing Diagram (When internal operation progress)
RST# TRYE CE#/OE# RY/BY#
1309 F16.2
FIGURE RST# Timing Diagram (During Program Erase operation)
VIHT
INPUT
REFERENCE POINTS
OUTPUT
VILT
1309 F17.0
test inputs driven VIHT (0.9 VDD) logic VILT (0.1 VDD) logic "0". Measurement reference points inputs outputs (0.5 VDD) (0.5 VDD). Input rise fall times (10% 90%)
Note: VINPUT Test VOUTPUT Test VIHT VINPUT HIGH Test VILT VINPUT Test
FIGURE Input/Output Reference Waveforms
©2009 Silicon Storage Technology, Inc.
S71309-05-000
07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
TESTER
1309 F18.1
FIGURE Test Load Example
©2009 Silicon Storage Technology, Inc.
S71309-05-000
07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
Start
Load data: XXAAH Address: 555H
Load data: XX55H Address: 2AAH
Load data: XXA0H Address: 555H
Load Word Address Word Data
Wait Program
Program Complete
1309 F19.1
Note: VIH, other value.
FIGURE Word-Program Algorithm
©2009 Silicon Storage Technology, Inc.
S71309-05-000
07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
Start
Load data: XXAAH Address: 555H
Load data: XX55H Address: 2AAH
Load data: XX25H Address:
Load data: Address:
Load data: Data Address: Keep writing buffer Data Load complete? Program Buffer Flash Load data: XX29H Address:
Wait Program
Program Complete
1309 F25.2 Note: Block Address Word Count Address word program subsequent Address values (WAX) Write Cycle later must have same A21-A4 Write Cycle VIH, other value
FIGURE Write-Buffer Programming
©2009 Silicon Storage Technology, Inc. S71309-05-000 07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
Internal Timer Program/Erase Initiated
Toggle Program/Erase Initiated
Data# Polling Program/Erase Initiated
RY/BY# Program/Erase Initiated
Wait TBP, TWBP, TSCE,
Read word
Read
Read RY/BY#
Program/Erase Completed
Read same word
true data?
RY/BY# Program/Erase Completed
Does match? Program/Erase Completed
Program/Erase Completed
1309 F20.1
Note: Program Buffer-to-Flash Operation, valid from last word loaded buffer using Write-toProgram Buffer command.
FIGURE Wait Options
©2009 Silicon Storage Technology, Inc.
S71309-05-000
07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
Query Entry Command Sequence Load data: XX98H Address: 555H
Entry Command Sequence
Software Product Entry Command Sequence Load data: XXAAH Address: 555H
Load data: XXAAH Address: 555H
Wait TIDA
Load data: XX55H Address: 2AAH
Load data: XX55H Address: 2AAH
Read data
Load data: XX88H Address: 555H
Load data: XX90H Address: 555H
Wait TIDA
Wait TIDA
Read
Read Software
1309 F21.0
Note: VIH, other value.
FIGURE CFI/SEC ID/Software Entry Command Flowcharts
©2009 Silicon Storage Technology, Inc.
S71309-05-000
07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
Software Exit Command Sequence
Exit Command Sequence
Exit Command Sequence Load data: XXAAH Address: 555H
Load data: XXAAH Address: 555H
Load data: XXF0H Address:
Load data: XX55H Address: 2AAH
Wait TIDA
Load data: XX55H Address: 2AAH
Load data: XXF0H Address: 555H
Return normal operation
Load data: XX90H Address: 555H
Wait TIDA
Load data: XX00H Address: XXXH
Return normal operation
Wait TIDA
Return normal operation
1309 F26.2
Note: VIH, other value.
FIGURE Software ID/CFI/SEC Exit Command Flowcharts
©2009 Silicon Storage Technology, Inc.
S71309-05-000
07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
Chip-Erase Command Sequence Load data: XXAAH Address: 555H
Sector-Erase Command Sequence Load data: XXAAH Address: 555H
Block-Erase Command Sequence Load data: XXAAH Address: 555H
Load data: XX55H Address: 2AAH
Load data: XX55H Address: 2AAH
Load data: XX55H Address: 2AAH
Load data: XX80H Address: 555H
Load data: XX80H Address: 555H
Load data: XX80H Address: 555H
Load data: XXAAH Address: 555H
Load data: XXAAH Address: 555H
Load data: XXAAH Address: 555H
Load data: XX55H Address: 2AAH
Load data: XX55H Address: 2AAH
Load data: XX55H Address: 2AAH
Load data: XX10H Address: 555H
Load data: XX50H Address:
Load data: XX30H Address:
Wait TSCE
Wait
Wait
Chip erased FFFFH
Sector erased FFFFH
Block erased FFFFH
1309 F23.0
Note: VIH, other value. Block Address Sector Address
FIGURE Erase Command Sequence
©2009 Silicon Storage Technology, Inc.
S71309-05-000
07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
Start Erase Operation
Load data: XXB0H Address: XXXH
Wait Time max) Erase Suspend Active
Execute valid operations while Erase Suspend mode
Load data: XX30H Address: XXXH
Resume Erase Operation
1309 F27.0
Note: VIH, other value.
FIGURE Erase Suspend/Resume
©2009 Silicon Storage Technology, Inc.
S71309-05-000
07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
Load data: XXAAH Address: 555H
Load data: XX55H Address: 2AAH
Load data: XXE0H Address: 555H
Wait TIDA
Protect Unprotect
Load data: XXA0H Address: 555H
Read Protect Status
Read data: Data Address:
Load data: Data Address:
More Blocks protect/unprotect Read status? Load data: XX90H Address: XXXH
Load data: XX00H Address: XXXH
Note: Data (unprotect); Data (protect). Block Address VIH, other value.
1309 F28.3
FIGURE Volatile Block Protection
©2009 Silicon Storage Technology, Inc. S71309-05-000 07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
Load data: XXAAH Address: 555H
Load data: XX55H Address: 2AAH
Load data: XXC0H Address: 555H
Wait TIDA Program, Erase Read
Program (Protect Block) Load data: XXA0H Address:
Erase Load data: XX80H Address:
Read Protect Status Read data: Data Address:
Load data: XX00H Address:
Load data: XX30H Address:
Wait Program, Erase, Read
More Program,Erase, Read?
Load data: XX90H Address:
Load data: XX00H Address:
1309 F30.1
Note: Data (unprotect); Data (protect). VIH, other value. Programming NVPB requires TBP, which results 20µs maximum programming time
FIGURE Non-Volatile Block Protect Mode
©2009 Silicon Storage Technology, Inc. S71309-05-000 07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
Load data: XXAAH Address: 555H
Load data: XX55H Address: 2AAH
Load data: XX50H Address: 555H
Wait TIDA
Load data: XXA0H Address:
Read Status Read data: Status Data Address: XXXH
Load data: XX00H Address:
Load data: XX90H Address:
Load data: XX00H Address:
1309 F31.0
Note: Status Data: (locked); (unlocked). VIH, other value.
FIGURE Global Lock NVPBs
©2009 Silicon Storage Technology, Inc.
S71309-05-000
07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
Program Read Password Load data: XXAAH Address: 555H
Submit Password Load data: XXAAH Address: 555H Load data: XX55H Address: 2AAH Load data: XX60H Address: 555H
Load data: XX55H Address: 2AAH
Load data: XX60H Address: 555H
Wait TIDA Wait TIDA Load data: XX25H Address: Load data: XX03H Address:
Program Load data: XXA0H Address:
Read Read data: Status Data Address: PWAX
Load data: PWD0 Address: PWA0 Load data: PWD1 Address: PWA1
Load data: PWDX Address: PWAX
Load data: PWD2 Address: PWA2 Load data: PWD3 Address: PWA3
More Program Read? Load data: XX90H Address:
Load data: XX29H Address:
Wait Load data: XX90H Address: Load data: XX00H Address: Exit Password Command Mode
1309 F32.0
Load data: XX00H Address:
Note: PWDX PWAX data address pairs submitted order. PWDX PWD0, PWD1, PWD2, PWD3 PWAX PWA0, PWA1,PWA2, PWA3 VIH, other value.
FIGURE Password Operations (Program, Read, Submit)
©2009 Silicon Storage Technology, Inc. S71309-05-000 07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
Load data: Address: 555H Load data: Address: 2AAH Load data: Address: 555H
Load data: Address:
1309 F33.0
Note: Global Lock must before executing this command. VIH, other value.
FIGURE Irreversible Block Lock Main Array
©2009 Silicon Storage Technology, Inc.
S71309-05-000
07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
PRODUCT ORDERING INFORMATION
6401 XXXX Environmental Attribute non-Pb Package Modifier balls leads Package Type TSOP (type1, 12mm 20mm) TFBGA (6mm 8mm, 0.8mm pitch) Temperature Range Commercial +70°C Industrial -40°C +85°C Minimum Endurance 100,000 cycles Read Access Speed Hardware Block Protection Bottom Boot-Block Uniform Kword) Boot-Block Uniform Kword) Bottom Boot-Block Non-Uniform(8 Kword) Boot-Block Non-Uniform Kword) Device Density Mbit Voltage 2.7-3.6V Product Series Advanced Multi-Purpose Flash Plus
Environmental suffix denotes non-Pb solder. non-Pb solder devices "RoHS Compliant".
©2009 Silicon Storage Technology, Inc.
S71309-05-000
07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
Valid Combinations
Valid Combinations SST38VF6401
SST38VF6401-90-5C-EKE SST38VF6401-90-5I-EKE SST38VF6401-90-5C-B3KE SST38VF6401-90-5I-B3KE
Valid Combinations SST38VF6402
SST38VF6402-90-5C-EKE SST38VF6402-90-5I-EKE SST38VF6402-90-5C-B3KE SST38VF6402-90-5I-B3KE
Valid Combinations SST38VF6403
SST38VF6403-90-5C-EKE SST38VF6403-90-5I-EKE SST38VF6403-90-5C-B3KE SST38VF6403-90-5I-B3KE
Valid Combinations SST38VF6404
SST38VF6404-90-5C-EKE SST38VF6404-90-5I-EKE SST38VF6404-90-5C-B3KE SST38VF6404-90-5I-B3KE
Note: Valid combinations those products mass production will mass production. Consult your sales representative confirm availability valid combinations determine availability combinations.
©2009 Silicon Storage Technology, Inc.
S71309-05-000
07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
PACKAGING DIAGRAMS
1.05 0.95 Identifier 0.50
12.20 11.80
0.27 0.17
18.50 18.30
0.15 0.05
DETAIL 1.20 max. 0.70 0.50 20.20 19.80 Note: Complies with JEDEC publication MO-142 dimensions, although some dimensions more stringent. linear dimensions millimeters (max/min). Coplanarity: Maximum allowable mold flash 0.15 package ends, 0.25 between leads. 0.70 0.50
48-tsop-EK-8
FIGURE 48-lead Thin Small Outline Package (TSOP) 12mm 20mm Package Code:
©2009 Silicon Storage Technology, Inc.
S71309-05-000
07/09
Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404
VIEW
8.00 0.20
BOTTOM VIEW
5.60 0.80 0.45 0.05 (48X)
0.80 CORNER 4.00 6.00 0.20
SIDE VIEW
1.10 0.10
CORNER
SEATING PLANE 0.35 0.05
0.12
Note:
Complies with JEDEC Publication MO-210, variant 'AB-1', although some dimensions more stringent. linear dimensions millimeters. Coplanarity: 0.12 Ball opening size 0.38 0.05 48-tfbga-B3K-6x8-450mic-4
FIGURE 48-ball Thin-profile, Fine-pitch Ball Grid Array (TFBGA) Package Code: B3KE
TABLE Revision History
Number Description Date 2007 2007
Initial release Removed Program Suspend/Resume page Updated "Erase-Suspend/Erase-Resume Commands" page Updated "Non-Volatile Block Protection" page Updated "Password Mode (DQ2, 0,1)" page Updated "Power-Up Specifications" page Added note Figure page Updated "Valid Combinations" page Modified Features Product Description page Revised endurance statement Features, Product Description Table footnote Updated "Valid Combinations" page Changed document status "Preliminary Specification" Changed Power Specification page 10,000 cycle endurance products. 10,000 cycle endurance products removed. S71309(01). Changed document status "Data Sheet"
2007 2008
2009 2009
Silicon Storage Technology, Inc. 1171 Sonora Court Sunnyvale, 94086 Telephone 408-735-9110 408-735-9036 www.SuperFlash.com www.sst.com
©2009 Silicon Storage Technology, Inc. S71309-05-000 07/09

SST38VF6401 SST38VF6402 SST38VF6403 SST38VF6404 SST38VF640x2.7V 6

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