model BSIM3V3.2 Parameter Value LEVEL VERSION VTH0 0.95 1.7E-07 DVT2 -
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FTD2011A
model BSIM3V3.2 Parameter Value LEVEL VERSION VTH0 0.95 1.7E-07 DVT2 -0.01 1.0E-21 -1.0 RDSW 1.342E+03 WINT NFACTOR 0.93 CDSCD PCLM DROUT 0.96 PVAG 0.01 MOBMOD CAPMOD CGDO 1.1E-11 CGDL 9.1E-10 3.0E-10 -5.0E-10 ACDE 0.56 1.01 -0.55 3.3E+04 Temp Date 1.0E-6 919138E-6 919138E-12 0.017 2007/08/01 Parameter TNOM DVT0 VSAT PRWG LINT ETA0 PDIBLC1 PSCBE1 DELTA NQSMOD XPART CGBO CKAPPA NOFF MOIN Value 1.96 3.12 1.75E+05 -6.076E-06 -2.2E-08 0.12 0.12 1.8E+09 0.037 3.66 -0.64 Parameter DVT1 VOFF CDSC DSUB PDIBLC2 PSCBE2 NGATE NOIMOD CGSO CGSL VOFFCV IJTH Value 3.3E-08 -0.04 0.58 2.2E-09 0.82 -0.08 2.4E-04 0.96 1.8E-03 1.0E-05 1.0E+19 6.0E-11 -0.4 3.0E-04 3.4E-07 2.206E+03
*Information herein example only guaranteed volume production.
SANYO Semiconductor Co., Ltd. Hyper Device Division.
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