FW360 N-Channel P-Channel Silicon MOSFETs FW360 Feature
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Ordering number ENN7556A
FW360
N-Channel P-Channel Silicon MOSFETs
FW360
Features
General-Purpose Switching Device Applications
FW360 incorporates N-channel MOSFET P-channel MOSFET that feature ON-resistance high-speed switching, thereby enabling high-density mounting. Excellent ON-resistance characteristic. drive. Best suited motor drive application.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW100ms) Drain Current (PW10µs) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS Tstg duty cycle1% duty cycle1% Mounted ceramic board (1200mm2!0.8mm) 1unit, PW10s Mounted ceramic board (1200mm2!0.8mm), PW10s Conditions N-channel +150 P-channel -100 Unit
Electrical Characteristics Ta=25°C
Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS IDSS IGSS VGS(off) ID=1mA, VGS=0V VDS=100V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1A Symbol Conditions Ratings Unit
Marking W360
Continued next page.
SANYO products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO representative nearest before using SANYO products described contained herein such applications. SANYO assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO products described contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62005PA TB-00001493 31504 TA-100617 No.7556-1/6
FW360
Continued from preceding page.
Parameter Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) td(off) ID=-1mA, VGS=0V VDS=-100V, VGS=0V VGS=±16V, VDS=0V VDS=-10V, ID=-1mA VDS=-10V, ID=-1A ID=-1A, VGS=-10V ID=-1A, VGS=-4V VDS=-20V, f=1MHz VDS=-20V, f=1MHz VDS=-20V, f=1MHz specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=-50V, VGS=-10V, ID=-2A VDS=-50V, VGS=-10V, ID=-2A VDS=-50V, VGS=-10V, ID=-2A IS=-2A, VGS=0V -1.2 -0.83 -1.2 -100 -2.6 Symbol RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) td(off) Conditions ID=1A, VGS=10V ID=1A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=50V, VGS=10V, ID=2A VDS=50V, VGS=10V, ID=2A VDS=50V, VGS=10V, ID=2A IS=2A, VGS=0V Ratings 0.82 Unit
Package Dimensions unit 7005-003
Electrical Connection
0.43
Source1 Gate1 Source2 Gate2 Drain2 Drain2 Drain1 Drain1 SANYO SOP8
Source1 Gate1 Source2 Gate2 Drain2 Drain2 Drain1 Drain1
view
0.595
1.27
No.7556-2/6
FW360
Switching Time Test Circuit
[N-channel] [P-channel]
VDD=50V -10V ID=1A RL=50
VDD= -50V
RL=50
PW=10µs D.C.1%
VOUT PW=10µs D.C.1%
VOUT
FW360
FW360
6.0V
[Nch] VGS=3.0V
-2.0
-6.0
[Pch]
-1.8 -1.6
8.0V
-10V -8.0V
3.5V
Drain Current,
Drain Current,
-1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2
VGS= -3.0V
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
-1.8
-2.0
Drain-to-Source Voltage,
IT05950
Drain-to-Source Voltage,
-4.0 -3.5
IT005951
[Nch] VDS=10V
[Pch] VDS= -10V
Drain Current,
Drain Current,
-3.0 -2.5 -2.0 -1.5 -1.0 -0.5
75°C
-25°C
Ta=2
-1.0 -2.0 -3.0 -4.0 -5.0 IT05953
Gate-to-Source Voltage,
IT05952
Gate-to-Source Voltage,
Ta=2
-25°C
75°C
No.7556-3/6
FW360
RDS(on)
[Nch] Static Drain-to-Source On-State Resistance, RDS(on) Ta=25°C ID=1A
RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
[Pch] Ta=25°C
Gate-to-Source Voltage,
IT05954
Gate-to-Source Voltage,
IT05955
RDS(on)
[Nch] Static Drain-to-Source On-State Resistance, RDS(on)
RDS(on)
[Pch]
Static Drain-to-Source On-State Resistance, RDS(on)
Ambient Temperature,
IT05956
Ambient Temperature,
[Nch] Forward Transfer Admittance, VDS=10V
IT05957
[Pch]
Forward Transfer Admittance,
VDS= -10V
0.01
Drain Current,
0.01
IT05958
-0.01
-0.1
-1.0
Drain Current,
-1.0 -0.1
IT05959
[Nch] VGS=0V
[Pch] VGS=0V
Source Current,
Source Current,
25°C -25°C
-0.4 -0.5 -0.6
Ta=7
IT05960
-0.01 -0.3
-0.7
-0.8
-0.9
-1.0
Diode Forward Voltage,
Diode Forward Voltage,
IT05961
No.7556-4/6
FW360
Time
[Nch] VDD=50V VGS=10V
Time
[Pch] VDD= -50V VGS= -10V
Switching Time, Time
-0.1
td(off)
Switching Time, Time
td(off)
td(on)
td(on)
-1.0
Drain Current,
1000
IT05962
-0.1
-1.0
Ciss, Coss, Crss
Ciss
[Nch] f=1MHz
Ciss, Coss, Crss
Drain Current,
IT05963
[Pch] f=1MHz
Ciss, Coss, Crss
Ciss, Coss, Crss
1000
Ciss
Coss
Crss
Coss
Crss
IT05964
IT05965
Drain-to-Source Voltage,
Drain-to-Source Voltage,
VDS=50V ID=2A
[Nch]
VDS= -50V
[Pch]
Gate-to-Source Voltage,
Gate-to-Source Voltage,
IT05966
Total Gate Charge,
Total Gate Charge,
IT05967
IDP=8A IDP=2A
[Nch] <100µs
IDP= IDP=
[Pch] <100µs
Drain Current,
Drain Current,
-1.0 -0.1
Operation this area limited RDS(on).
0.01 0.01
Ta=25°C Single pulse Mounted ceramic board (1200mm2!0.8mm) 1unit
Drain-to-Source Voltage,
7100 IT05968
Operation this area limited RDS(on).
-0.01 -0.1
Ta=25°C Single pulse Mounted ceramic board (1200mm2!0.8mm) 1unit
-1.0
Drain-to-Source Voltage,
-100 IT05969
No.7556-5/6
FW360
Mounted ceramic board
[Nch] (1200mm2!0.8mm)
Mounted ceramic board
[Pch] (1200mm2!0.8mm)
Allowable Power Dissipation,
Allowable Power Dissipation,
PW10s
PW10s
Ambient Temperature,
IT05970
Ambient Temperature,
IT05971
Allowable Power Dissipation (FET1),
PD(FET1) PD(FET2)
[Nch, Pch]
Allowable Power Dissipation (FET2),
IT05972
Note usage Since FW360 MOSFET product, please avoid using this device vicinity highly charged objects.
Specifications SANYO products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Electric Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO products(including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must exported without obtaining export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Electric Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO product that intend use. Information (including circuit diagrams circuit parameters) herein example only guaranteed volume production. SANYO believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties. This catalog provides information June, 2005. Specifications information herein subject change without notice.
No.7556-6/6
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