Epitaxial Planar Silicon Transistor 2SC4851 Muting Circuits

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Epitaxial Planar Silicon Transistor 2SC4851 Muting Circuits

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Ordering number:ENN4558
Epitaxial Planar Silicon Transistor
2SC4851
Muting Circuits
Features
Ultrasmall-sized package permitting 2SC4851applied sets made smaller slimer. Small output capacitance. collector-to-emitter saturation voltage. Small resistance.
Package Dimensions
unit:mm 2059B
[2SC4851]
0.425 1.250 0.15
0.425
0.65 0.65
Specifications
Absolute Maximum Ratings 25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Tstg Conditions
Base Emitter Collector SANYO
Ratings +150
Unit
Electrical Characteristics 25°C
Parameter Collector Cutoff Current Emitter Cutoff Current Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO VCB=15V, IE=0 VEB=4V, IC=0 VCE=2V, IC=5mA VCE=5V, IC=10mA VCB=10V, f=1MHz Conditions Ratings 3200 Unit
Marking
Continued next page.
SANYO products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO representative nearest before using SANYO products described contained herein such applications. SANYO assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges,or other parameters) listed products specifications SANYO products described contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21005TN (PC)/12099HA (KT)/12894HO (KOTO) AX-8027 No.4558-1/3
2SC4851
Continued from preceding page.
Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Resistance Symbol VCE(sat) VBE(sat) IC=10mA, IB=1mA IC=10mA, IB=1mA Conditions Ratings 0.74 Unit
V(BR)CBO IC=10µA, IE=0 V(BR)CEO IC=1mA, RBE= V(BR)EBO IE=10µA, IC=0 IB=3mA, f=1MHz
5.0µA 4.5µA 4.0µA
3.5µA 3.0µA
2.5µA 2.0µA 1.5µA 1.0µA 0.5µA
Collector Current,
60µA
Collector Current,
160µ 140µA 120µ 100µ 80µA
40µA
20µA
IB=0
ITR07561
IB=0
ITR07562
Collector-to-Emitter Voltage,
Collector-to-Emitter Voltage,
VCE=2V
VCE=2V
Ta=75°C
Collector Current,
Current Gain,
Ta=75°C
-25°C
25°C
1000
25°C -25°C
ITR07563
Base-to-Emitter Voltage,
Collector Current,
ITR07564
VCE(sat)
IB=10
Base-to-Emitter Saturation Voltage, (sat)
VBE(sat)
IB=10
-25°C
Collector-to-Emitter Saturation Voltage, (sat)
75°C
25°C
Collector Current,
ITR07565
Collector Current,
ITR07566
No.4558-2/3
2SC4851
1000
VCE=5V
f=1MHz
Gain-Bandwidth Product,
Output Capacitance,
Collector Current,
ITR07567
Collector-to-Base Voltage,
ITR07568
f=1MHz
Collector Dissipation,
Resistance,
Base Current,
ITR07569
Ambient Temperature,
ITR07570
Specifications SANYO products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Electric Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO products(including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must expor without obtaining expor license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Electric Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO product that intend use. Information (including circuit diagrams circuit parameters) herein example only guaranteed volume production. SANYO believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information February, 2005. Specifications information herein subject change without notice.
No.4558-3/3

Epitaxial Planar Silicon Transistor 2SC4851 Muting Circuits

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