Triple Diffused Planar Silicon Transistor 2SC4125 Ultrahigh-

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Triple Diffused Planar Silicon Transistor 2SC4125 Ultrahigh-

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Ordering number:ENN2954
Triple Diffused Planar Silicon Transistor
2SC4125
Ultrahigh-Definition Display Horizontal Deflection Output Applications
Features
Adoption MBIT process. On-chip damper diode. High breakdown voltage (VCBO=1500V). High speed (tf=100ns typ). High reliability (Adoption process).
Package Dimensions
unit:mm 2039D
[2SC4125]
16.0
21.0 22.0
20.4
Specifications
Absolute Maximum Ratings 25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Tstg
Tc=25°C
5.45
5.45
Base Collector Emitter SANYO TO-3PML
Conditions
Ratings 1500 +150
Unit
Electrical Characteristics 25°C
Parameter Collector Cutoff Current Collector-to-Emitter Sastain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO ICES VCB=800V, IE=0 VCE=1500V, RBE=0 Conditions Ratings Unit
VCEO(sus) IC=100mA, IB=0 IEBO VEB=4V, IC=0 VCE(sat) IC=8A, IB=2A VBE(sat) IC=8A, IB=2A
Continued next page.
SANYO products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO representative nearest before using SANYO products described contained herein such applications. SANYO assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges,or other parameters) listed products specifications SANYO products described contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71504TN (PC)/D0198HA (KT)/9149MO, No.2954-1/4
2SC4125
Continued from preceding page.
Parameter Current Gain Diode Forward Voltage Storage Time Fall Time Symbol hFE1 hFE2 tstg VCE=5V, IC=1A VCE=5V, IC=8A IEC=10A IC=6A, IB1=1.2A, IB2=-2.4A IC=6A, IB1=1.2A, IB2=-2.4A Conditions Ratings Unit
Switching Time Test Circuit
PW=20µs D.C.1% INPUT 100µF VBE= 470µF VCC=200V 33.3 OUTPUT
1.8A 2.0A 1.4A 1.6A 1.0A 1.2A
VCE=5V
Collector Current,
Collector Current,
200mA
IB=0
ITR06381
Collector-to-Emitter Voltage,
Base-to-Emitter Voltage,
800mA 600mA 400mA
25°C -40°C
ITR06382
VCE=5V
VCE(sat)
IB=5
Current Gain,
Collector-to-Emitter Saturation Voltage, (sat)
ITR06383
120°C
ITR06384
Collector Current,
Collector Current,
No.2954-2/4
2SC4125
Time
tstg
Time
IC=6A IB1=1.2A VCC=200V load
Switching Time, Time
Switching Time, Time
-0.1
IC=5IB1 IB2= -2IB1 VCC=200V load
Collector Current,
ITR06385
-1.0
Base Current,
ITR06386
Forward Bias
ICP=25A IC=10A
Reverse Bias
ICP=25A
Collector Current,
Collector Current,
rati
0.01
Tc=25°C Single pulse
IB2= L=500µH Single pulse Tc=25°C
Collector-to-Emitter Voltage,
1000 ITR06387
Collector-to-Emitter Voltage,
1000
ITR06388
Collector Dissipation,
Collector Dissipation,
Ambient Temperature,
ITR06389
Ambient Temperature,
ITR06390
No.2954-3/4
2SC4125
Specifications SANYO products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Electric Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO products(including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must expor without obtaining expor license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Electric Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO product that intend use. Information (including circuit diagrams circuit parameters) herein example only guaranteed volume production. SANYO believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information July, 2004. Specifications information herein subject change without notice.
No.2954-4/4

Triple Diffused Planar Silicon Transistor 2SC4125 Ultrahigh-

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