Triple Diffused Planar Silicon Transistor 2SC4221 500V/3A Sw

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Triple Diffused Planar Silicon Transistor 2SC4221 500V/3A Sw

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Ordering number:ENN2816B
Triple Diffused Planar Silicon Transistor
2SC4221
500V/3A Switching Regulator Applications
Features
High breakdown voltage, high reliability. High-speed switching (tf=0.1µs typ). Wide ASO. Adoption MBIT process. Suitable sets whose height restricted.
Package Dimensions
unit:mm 2049C
[2SC4221]
10.2
11.5
20.9
11.0
Specifications
Absolute Maximum Ratings 25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Tstg
PW300µs, duty cycle10% Tc=25°C
2.55
2.55
Base Collector Emitter SANYO TO-220MF
Conditions
Ratings +150
Unit
Electrical Characteristics 25°C
Parameter Collector Cutoff Current Emitter Cutoff Current Current Gain Symbol ICBO IEBO hFE1* hFE2 VCB=500V, IE=0 VEB=5V, IC=0 VCE=5V, IC=0.3A VCE=5V, IC=1.5A Conditions Ratings Unit
Continued next page. hFE1 2SC4221 classified follows. When specifying hFE1 rank, specify ranks more principle.
Rank
SANYO products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO representative nearest before using SANYO products described contained herein such applications. SANYO assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges,or other parameters) listed products specifications SANYO products described contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
80504TN (PC)/D1598HA (KT)/N228MO, No.2816-1/4
2SC4221
Continued from preceding page.
Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Gain-Bandwidth Product Output Capacitance Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Collector-to-Emitter Sustain Voltage Turn-ON Time Storage Time Fall Time Symbol VCE(sat) VBE(sat) IC=1.5A, IB=0.3A IC=1.5A, IB=0.3A VCE=10V, IC=0.3A VCB=10V, f=1MHz Conditions Ratings Unit
V(BR)CBO IC=1mA, IE=0 V(BR)CEO IC=5mA, RBE=
V(BR)EBO IE=1mA, IC=0 VCEX(sus) IC=1.5A, IB1=0.6A, L=2mH, IB2=-0.6A, clamped IC=2A, IB1=0.4A, IB2=-0.8A, RL=100, VCC=200V tstg IC=2A, IB1=0.4A, IB2=-0.8A, RL=100, VCC=200V IC=2A, IB1=0.4A, IB2=-0.8A, RL=100, VCC=200V
Switching Time Test Circuit
INPUT PW=20µs D.C.1% 100µF 470µF 200V
OUTPUT
500mA
VCE=5V
Collector Current,
Collector Current,
400mA
300mA
100mA
50mA
20mA
IB=0
ITR06520 ITR06519
Collector-to-Emitter Voltage,
Base-to-Emitter Voltage,
VCE=5V
VCE(sat)
IB=5
Collector-to-Emitter Saturation Voltage, (sat)
Ta=120°C
Current Gain,
25°C
-40°C
25°C -40°C
200mA
20°C
Collector Current,
ITR06521
Collector Current,
ITR06522
No.2816-2/4
2SC4221
VBE(sat)
IB=5
Switching Time, Time
Time
VCC=200V 5IB1= -2.5IB2=IC
tstg
Base-to-Emitter Saturation Voltage, (sat)
-40°C 25°C
120°C
Collector Current,
ITR06523
Collector Current,
ITR06524
Forward Bias
ICP=6A IC=3A
Reverse Bias
IB2= -0.6A L=200µH Tc=25°C
<50µs
Collector Current,
Collector Current,
Test Ckt.
0.01
Tc=25°C Single pulse
VCC=20V 1000 ITR06526
1000 ITR06525
Collector-to-Emitter Voltage,
Collector-to-Emitter Voltage,
Rth(t)
Transient Thermal Resistance, Rth(t) °C/W
Tc=25°C
Collector Dissipation,
Time,
1000 ITR06527
Ambient Temperature,
ITR06528
No.2816-3/4
2SC4221
Specifications SANYO products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Electric Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO products(including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must expor without obtaining expor license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Electric Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO product that intend use. Information (including circuit diagrams circuit parameters) herein example only guaranteed volume production. SANYO believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information August, 2004. Specifications information herein subject change without notice.
No.2816-4/4

Triple Diffused Planar Silicon Transistor 2SC4221 500V/3A Sw

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