Epitaxial Planar Silicon Transistor 2SC4452 High-Speed Switc

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Epitaxial Planar Silicon Transistor 2SC4452 High-Speed Switc

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Ordering number:ENN2811
Epitaxial Planar Silicon Transistor
2SC4452
High-Speed Switching Applications
Features
High-speed switching. collector saturation voltage. High gain-bandwidth product. Small collector capacity. Ultrasmall package permitting applied sets small slim.
Package Dimensions
unit:mm 2059B
[2SC4452]
0.425
0.15
1.250
0.425
0.65 0.65
Specifications
Absolute Maximum Ratings 25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO Tstg Conditions
Base Emitter Collector SANYO
Ratings +150
Unit
Electrical Characteristics 25°C
Parameter Collector Cutoff Current Emitter Cutoff Current Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO VCB=20V, IE=0 VEB=3V, IC=0 VCE=1V, IC=10mA VCE=10V, IC=10mA VCB=5V, f=1MHz
Rank
Conditions
Ratings 200*
Unit
2SC4452 classified 10mA follows Marking rank
Continued next page.
SANYO products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO representative nearest before using SANYO products described contained herein such applications. SANYO assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges,or other parameters) listed products specifications SANYO products described contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
90204TN (PC)/D2598HA (KT)/O278MO, No.2811-1/4
2SC4452
Continued from preceding page.
Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol VCE(sat) VBE(sat) IC=10mA, IB=1mA IC=10mA, IB=1mA Conditions Ratings 0.13 0.80 0.25 0.85 Unit
V(BR)CBO IC=10µA, IE=0 V(BR)CEO IC=1mA, RBE= V(BR)EBO tstg IE=10µA, IC=0 specified test circuit. specified test circuit. specified test circuit.
ton, toff Test Circuit
VOUT PW300ns D.C.2% 3.3k 3.3k 0.0023µF 0.0023µF 0.005µF 0.005µF 0.1µF
Sampling oscilloscope
tstg Test Circuit
PW300ns D.C.2% 0.1µF 0.0023µF 0.0023µF 0.1µF VOUT
Sampling oscilloscope
ITR06978
10µF
10µF
0.1µF
0.1µF
-10V Waveforms VOUT VOUT VBB= VIN=+15V toff VBB=+12 VIN= -15V tstg VOUT
160µA
Collector Current,
3.0mA 2.5mA 2.0mA
Collector Current,
140µA
120µA 100µA
80µA 60µA 40µA
1.5mA
1.0mA
0.5mA
20µA
IB=0
ITR06977
IB=0
Collector-to-Emitter Voltage,
Collector-to-Emitter Voltage,
No.2811-2/4
2SC4452
VCE=1V Gain-Bandwidth Product,
VCE=10V
1000
Current Gain,
Ta=75°C 25°C
-25°C
Collector Current,
ITR06979
Collector Current,
ITR06980
f=1MHz Output Capacitance,
f=1MHz
Input Capacitance,
ITR06981
ITR06982
Emitter-to-Base Voltage,
Collector-to-Base Voltage,
VCE(sat)
IB=10 Base-to-Emitter Saturation Voltage, (sat)
VBE(sat)
IB=10
Collector-to-Emitter Saturation Voltage, (sat)
-25°C
75°C
25°C
-25°C
25°C
75°C
Collector Current,
ITR06983
Collector Current,
ITR06984
Time
VCC=3V IC=10IB1= -10IB2 Collector Dissipation,
Switching Time, Time
tstg
ITR06985
Collector Current,
Ambient Temperature,
ITR06986
No.2811-3/4
2SC4452
Specifications SANYO products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Electric Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO products(including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must expor without obtaining expor license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Electric Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO product that intend use. Information (including circuit diagrams circuit parameters) herein example only guaranteed volume production. SANYO believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information September, 2004. Specifications information herein subject change without notice.
No.2811-4/4

Epitaxial Planar Silicon Transistor 2SC4452 High-Speed Switc

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