Download

PDF Abstract Text:

Ordering number : ENN1349C

GZB3.0 to 36

Ordering number : ENN1349C
GZB3.0 to 36
Silicon Planar Type
GZB3.0 to 36
1.0W Zener Diode
Features
Package Dimensions
unit : mm 1134A
GZB3.0 to 36
Cathode mar
0.8 A 2.7 max
Specifications
Parameter Power Dissipation Allowable maximum zener current Junction Temperature Storage Temperature Electrical characteristics (referential next page) Symbol P IZM Tj Tstg Conditions Ratings 1 175 -55 to +175 Unit W mA °C °C
SANYO Electric Co., Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82003 TS IM TA-4263 / 62098HA(KT) / 2089TA / 1179TA / 9194MY, TS No.1349-1 / 3
5.2 max
GZB3.0 to 36
PS No.1349-2 / 3
GZB3.0 to 36
t of icien coeff ture era / °C Temp mV
Allowable Power Dissipation, P - W
0 0 40 80 120 160 200 IT06599
Ambient Temperature, Ta - °C
Reverse Surge Power Dissipation, PZ(surge) - W
PZ(surge) - tw
Zener Voltage, VZ - V
IT06600
Pulse Width, tw - ms
5 1000 IT06601
No.1349-3 / 3
Temperature Coefficient of Zener Voltage, z - mV / °C
ltage