PNP/NPN Epitaxial Planar Silicon Transistors 2SB927/2SD1247

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PNP/NPN Epitaxial Planar Silicon Transistors 2SB927/2SD1247

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Ordering number:ENN1029C
PNP/NPN Epitaxial Planar Silicon Transistors
2SB927/2SD1247
Large-Current Driving Applications
Applications
Power supplies, relay drivers, lamp drivers, electrical equipment.
Package Dimensions
unit:mm 2006B
[2SB927/2SD1247]
Features
Adoption FBET, MBIT processes. saturation voltage. Large current capacity wide ASO.
14.0
2SB927
Specifications
Absolute Maximum Ratings 25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Tstg Conditions
1.45
1.45
Emitter Collector Base SANYO
Ratings (-)30 (-)25 (-)6 (-)2.5 (-)5 +150
Unit
Electrical Characteristics 25°C
Parameter Collector Cutoff Current Emitter Cutoff Current Current Gain Gain-Bandwidth Product Common Base Output Capacitance Symbol ICBO IEBO hFE1 hFE2 VCB=(-)20V, IE=0 VEB=(-)4V, IC=0 VCE=(-)2V, IC=(-)0.1A VCE=(-)2V, IC=(-)1.5A VCE=(-)10V, IC=(-)50mA VCB=(-)10V, f=1MHz 100* 19(32) Conditions Ratings (-)0.1 (-)0.1 560* Unit
2SB927/2SD1247 classified 0.1A follows
Rank
Continued next page.
SANYO products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO representative nearest before using SANYO products described contained herein such applications. SANYO assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges,or other parameters) listed products specifications SANYO products described contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O0303TN (KT)/92098HA (KT)/4077KI/3075KI/1263KI, No.1029-1/3
2SB927/2SD1247
Continued from preceding page.
Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol VCE(sat) VBE(sat) Conditions IC=(-)1.5A, IB=(-)75mA IC=(-)1.5A, IB=(-)75mA Ratings 0.18 (-0.35) 0.85 (-0.6) Unit
-2.0
2SB927 From -200mA -150mA -100mA -50mA -40mA -30mA
2SD1247
Collector Current,
Collector Current,
-1.6
-1.2
-6mA
-4mA -2mA
-10mA -8mA
10mA
-0.8
IB=0
1000
-0.4
-200 -400 -600
IB=0
-800 -1000
Collector-to-Emitter Voltage, mVITR08788
Collector-to-Emitter Voltage, mVITR08789
1000
VCE=2V
VCE=2V
Collector Current,
Current Gain,
(For PNP, 0.01
2SD1247
(For PNP, minus sign omitted.)
ITR08790
2SD1
2SB927
minus sign omitted.)
Base-to-Emitter Voltage,
1000
Collector Current,
ITR08791
VCE=10V
Output Capacitance,
f=1MHz
Gain-Bandwidth Product,
2SD1247
2SB927
(For PNP, minus sign omitted.)
1000
(For
PNP, minus sign omitted.)
Collector Current,
ITR08792
Collector-to-Base Voltage,
ITR08793
No.1029-2/3
2SB927/2SD1247
VCE(sat)
IB=20
1200
2SB927 2SD1247
Collector-to-Emitter Saturation Voltage, (sat)
Collector Dissipation,
1000
0.01 0.01
(For PNP, minus sign omitted.)
Collector Current,
ITR08794
Ambient Temperature,
ITR08795
ICP=5A
Collector Current,
IC=2.5A
2SB927 2SD1247 (For PNP, minus sign omitted.) 100ms Single pulse Ta=25°C
Collector-to-Emitter Voltage, ITR08796
Specifications SANYO products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Electric Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO products(including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must expor without obtaining expor license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Electric Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO product that intend use. Information (including circuit diagrams circuit parameters) herein example only guaranteed volume production. SANYO believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information October, 2003. Specifications information herein subject change without notice.
No.1029-3/3

PNP/NPN Epitaxial Planar Silicon Transistors 2SB927/2SD1247

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