PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB912/2S

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB912/2S

Datasheet Thumbnail

Top Searches for this datasheet

Ordering number:ENN1028B
PNP/NPN Epitaxial Planar Silicon Darlington Transistors
2SB912/2SD1229
Driver Applications
Applications
Motor drivers, printer hammer drivers, relay drivers, voltage reguraltor control.
Package Dimensions
unit:mm 2022A
[2SB912/2SD1229]
15.6 14.0
Features
High current gain. High current capacity wide ASO. saturation voltage.
20.0
15.0 20.0
2SB912
Specifications
Absolute Maximum Ratings 25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Tstg Conditions
5.45
5.45
Base Collector Emitter SANYO TO-3PB
Ratings (-)70 (-)60 (-)6 (-)10 (-)15
Unit
Tc=25°C
+150
Electrical Characteristics 25°C
Parameter Collector Cutoff Current Emitter Cutoff Current Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO IEBO VCE(sat) VBE(sat) VCB=(-)40V, IE=0 VEB=(-)5V, IC=0 VCE=(-)2V, IC=(-)5A VCE=(-)5V, IC=(-)5A IC=(-)5A, IB=(-)10mA IC=(-)5A, IB=(-)10mA 2000 5000 (-1.0) (-)2.0 (-)1.5 Conditions Ratings (-)0.1 (-)3.0 Unit
Continued next page.
SANYO products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO representative nearest before using SANYO products described contained herein such applications. SANYO assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges,or other parameters) listed products specifications SANYO products described contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1503TN (KT)/92098HA (KT)/10996TS (KOTO) 8-4522/4067KI/O193KI, No.1028-1/4
2SB912/2SD1229
Continued from preceding page.
Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol V(BR)CBO IC=(-)5mA, IE=0 V(BR)CEO IC=(-)50mA, RBE= tstg specified Test Circuit specified Test Circuit specified Test Circuit Conditions Ratings (-)70 (-)60 (0.5) (1.5) (1.7) Unit
Switching Time Test Circuit
PW=50s, Duty Cycle1% 500IB1= -500IB2=IC=5A
INPUT 100F VBE= 470F VCC=20V
Electrical Connection
OUTPUT
2SB912
(For PNP, polarity reversed.)
2SD1229
From 2SB912 -5.0mA Pulse -4.5mA -4.0mA -3.5mA -3.0mA -2.5mA -2.0mA
From 5.0mA 4.5mA 4.0mA 3.5mA 3.0mA 2.5mA
2.0mA
2SD1229 Pulse
Collector Current,
Collector Current,
-1.5mA
-1.0mA
1.5mA
-0.5mA
1.0mA
0.5mA
IB=0
ITR08697
IB=0
ITR08698
Collector-to-Emitter Voltage,
Collector-to-Emitter Voltage,
Pulse 2SB912 VCE=
Pulse 2SD1229 VCE=2V
Collector Current,
Collector Current,
-40°
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
-1.8
-2.0
-2.2
-40°C
20°C
25°C
Base-to-Emitter Voltage,
ITR08699
Base-to-Emitter Voltage,
ITR08700
No.1028-2/4
2SB912/2SD1229
Pulse
Ta=12
Pulse
2SB912 VCE=-2V Current Gain,
10000 1000
2SD1229 VCE=2V
Current Gain,
10000 1000 -0.1
25°C
-40°C
Collector Current,
-1.0
ITR08701
Collector Current,
ITR08702
-100 -1.0 -0.1
VCE(sat)
2SB912 IB=500
VCE(sat)
2SD1229 IB=500
Collector-to-Emitter Saturation Voltage, (sat)
Ta=-40°C
25°C
Collector-to-Emitter Saturation Voltage, (sat)
Ta=-40°C
120°C
-1.0
25°C 120°C
Collector Current,
-100 -1.0 -0.1
ITR08703
Collector Current,
ITR08704
VBE(sat)
2SB912 IB=500 Base-to-Emitter Saturation Voltage, (sat)
VBE(sat)
2SD1229 IB=500
Base-to-Emitter Saturation Voltage, (sat)
Ta=-40°C
Ta=-40°C
25°C 120°C
-1.0 ITR08705
25°C 120°C
ITR08706
Collector Current,
-1.0 -0.1
Collector Current,
ICP=-15A
ICP=15A
2SB912 Tc=25°C Collector Current,
2SD1229 Tc=25°C
Collector Current,
IC=-10A
IC=10A
100ms Single pulse
100ms Single pulse
Collector-to-Emitter Voltage,
-100 ITR08707
Collector-to-Emitter Voltage,
ITR08708
No.1028-3/4
2SB912/2SD1229
2SB912 2SD1229
Collector Dissipation,
ITR08709
Case Temperature,
Specifications SANYO products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Electric Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO products(including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must expor without obtaining expor license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Electric Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO product that intend use. Information (including circuit diagrams circuit parameters) herein example only guaranteed volume production. SANYO believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information December, 2003. Specifications information herein subject change without notice.
No.1028-4/4

PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB912/2S

Top Searches for this datasheet

Other recent searches