Epitaxial Planar Silicon Transistor 2SB893 Large-Current Dri

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Epitaxial Planar Silicon Transistor 2SB893 Large-Current Dri

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Ordering number:ENN1023C
Epitaxial Planar Silicon Transistor
2SB893
Large-Current Driving Applications
Applications
Power supplies, relay drivers, lamp drivers, strobes.
Package Dimensions
unit:mm 2003B
[2SB893]
Features
saturation voltage VCE(sat)-0.45V (IC=-1.5A, IB=-0.15A). Large current capacity wide max=-2.5A.
0.45 0.45
0.44
14.0
Specifications
Absolute Maximum Ratings
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Allowable Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Tstg Conditions
Emitter Collector Base SANYO
Ratings -2.5 0.75 +150
Unit
Electrical Characteristics
Parameter Collector Cutoff Current Emitter Cutoff Current Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 Conditions VCB=-20V, IE=0 VEB=-4V, IC=0 VCE=-2V, IC=-500mA VCE=-2V, IC=-3A, pulse VCE=-10V, IC=-50mA VCB=-10V, f=1MHz Ratings -1.0 -1.0 100* 560* Unit
SB893 classified 500mA follows
Rank
Continued next page.
SANYO products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO representative nearest before using SANYO products described contained herein such applications. SANYO assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges,or other parameters) listed products specifications SANYO products described contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
10904TN (KT)/91098HA (KT)/4067KI/3125KI/7223KI, No.1023-1/3
2SB893
Continued from preceding page.
Parameter Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol VCE(sat) IC=-1.5A, IB=-0.15A V(BR)CBO IC=-10µA, IE=0 V(BR)CEO IC=-1mA, RBE= V(BR)EBO IE=-10µA, IC=0 Conditions Ratings -0.25 -0.45 Unit
Pulse -80mA -100mA -150mA
-100mA -60mA
-60mA
Collector Current,
-40mA
Pulse
Collector Current,
-40m
-30mA
-30m -25mA
-20mA
-15mA
-20mA
-15mA
-10mA
-10mA
-5mA
-2mA -1mA
-5mA
-2mA IB=0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2
ITR08662 1000
IB=0
ITR08663
Collector-to-Emitter Voltage,
-3.2 -2.8
Collector-to-Emitter Voltage,
VCE= Pulse
VCE= (Pulse)
Collector Current,
Current Gain,
-2.4 -2.0 -1.6 -1.2 -0.8 -0.4 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
-0.01
-0.1
-1.0
Base-to-Emitter Voltage,
1000
ITR08664
Collector Current,
ITR08665
VCE= -10V Pulse
Output Capacitance,
f=1MHz Pulse
Gain-Bandwidth Product,
-100
Collector Current,
-1000 ITR08666
-1.0
Collector-to-Base Voltage,
ITR08667
No.1023-2/3
2SB893
-10000
VCE(sat)
IB=10 Pulse
1000
Collector-to-Emitter Saturation Voltage, (sat)
-1000 -100 -0.01
Collector Dissipation,
-0.1 -1.0
Collector Current,
ITR08668
Ambient Temperature,
ITR08669
ICP=-5A
Collector Current,
IC=-2.5A
-1.0
-0.1 -0.1
-1.0
Collector-to-Emitter Voltage,
ITR08670
Specifications SANYO products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Electric Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO products(including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must expor without obtaining expor license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Electric Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO product that intend use. Information (including circuit diagrams circuit parameters) herein example only guaranteed volume production. SANYO believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information January, 2004. Specifications information herein subject change without notice.
No.1023-3/3

Epitaxial Planar Silicon Transistor 2SB893 Large-Current Dri

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