BXL4001 BXL4001 Features N-Channel Silicon MOSFET

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BXL4001 BXL4001 Features N-Channel Silicon MOSFET

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Ordering number ENA1459
BXL4001
BXL4001
Features
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
ON-resistance. Motor drive. Avalanche resistance guarantee. drive.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) Avalanche Current Symbol VDSS VGSS Tstg PW10s, duty cycle1% Tc=25°C Conditions Ratings 1.75 +150 Unit
Note VDD=30V, L=100H, IAV=51A L100H, Single pulse
Electrical Characteristics Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0V VDS=75V, VGS=0V VGS=±16V, VDS=0V Ratings Unit
Marking XL4001
Continued next page.
SANYO Semiconductor Co.,Ltd. products described contained herein are, with regard "standard application", intended general electronics equipment (home appliances, equipment, communication device, office equipment, industrial equipment etc.). products mentioned herein shall intended "special application" (medical equipment whose purpose sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level reliability directly threaten human lives case failure malfunction product cause harm human bodies, shall they grant guarantee thereof. should intend products applications outside standard applications customer considering such and/or outside scope intended standard applications, please consult with prior intended use. there consultation inquiry before intended use, customer shall solely responsible use. Specifications SANYO Semiconductor Co.,Ltd. products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer' products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer' products equipment.
42209QA TC-00001940 A1459-1/5
BXL4001
Continued from preceding page.
Parameter Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol VGS(off) RDS(on) Ciss Coss Crss td(on) td(off) Conditions VDS=10V, ID=1mA VDS=10V, ID=43A ID=43A, VGS=10V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=30V, VGS=10V, ID=85A VDS=30V, VGS=10V, ID=85A VDS=30V, VGS=10V, ID=85A IS=85A, VGS=0V Ratings 6700 12.4 Unit
Package Dimensions
unit (typ) 7530-001
10.2
14.0 15.1
14.0
(1.6)
2.55
2.55
Gate Drain Source SANYO TO-220(LS)
2.55
2.55
Switching Time Test Circuit
VDD=30V
Avalanche Resistance Test Circuit
PW=10s D.C.1%
ID=43A RL=0.7 VOUT
BXL4001
BXL4001
A1459-2/5
BXL4001
Tc=25°C
VGS(off)
-25° 75°C
Drain Current,
Drain Current,
VGS=5V
IT14625
25°C
IT14626 IT14628 IT14630 IT14632
VDS=10V
Drain-to-Source Voltage,
RDS(on)
Cutoff Voltage, VGS(off)
RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
IT14627
Static Drain-to-Source On-State Resistance, RDS(on)
ID=43A Single pulse
Single pulse
Tc=75°C 25°C -25°C
Gate-to-Source Voltage,
Case Temperature,
0.01 0.001
Forward Transfer Admittance,
VDS=10V
VGS=0V Single pulse
Source Current,
75°C 25°C -25°C
Drain Current,
1000
IT14629
Time
Ciss, Coss, Crss
Ciss
Diode Forward Voltage,
VDD=30V VGS=10V
(off)
f=1MHz
10000
Switching Time, Time
Ciss, Coss, Crss
1000
Coss
td(on)
Crss
Drain Current,
IT14631
Drain-to-Source Voltage,
A1459-3/5
BXL4001
VDS=30V ID=85A Drain Current,
IDP=340A ID=85A PW10s
Gate-to-Source Voltage,
IT14633
Operation this area limited RDS(on).
Tc=25°C Single pulse
Total Gate Charge,
Drain-to-Source Voltage,
IT14634
Allowable Power Dissipation,
Allowable Power Dissipation,
1.75
Ambient Temperature,
IT14636
Case Temperature,
IT14635
Avalanche Energy derating factor
IT14637
Ambient Temperature,
A1459-4/5
BXL4001
Note usage Since BXL4001 MOSFET product, please avoid using this device vicinity highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor Co.,Ltd. products described contained herein. SANYO Semiconductor Co.,Ltd. strives supply high-quality high-reliability products, however, semiconductor products fail malfunction with some probability. possible that these probabilistic failures malfunction could give rise accidents events that could endanger human lives, trouble that could give rise smoke fire, accidents that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor Co.,Ltd. products described contained herein controlled under applicable local export control laws regulations, such products require export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written consent SANYO Semiconductor Co.,Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor Co.,Ltd. product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. Upon using technical information products described herein, neither warranty license shall granted with regard intellectual property rights other rights SANYO Semiconductor Co.,Ltd. third party. SANYO Semiconductor Co.,Ltd. shall liable claim suits with regard third party's intellectual property rights which resulted from technical information products mentioned above.
This catalog provides information April, 2009. Specifications information herein subject change without notice.
A1459-5/5

BXL4001 BXL4001 Features N-Channel Silicon MOSFET

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