EMH2308 EMH2308 Features P-Channel Silicon MOSFET

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

EMH2308 EMH2308 Features P-Channel Silicon MOSFET

Datasheet Thumbnail

Top Searches for this datasheet

Ordering number ENA1445
EMH2308
EMH2308
Features
P-Channel Silicon MOSFET
General-Purpose Switching Device Applications
EMH2308 incorporates P-channel MOSFET that feature ON-resistance ultrahigh-speed switching, thereby enabling high-density mounting. 1.8V drive.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS Tstg PW10s, duty cycle1% When mounted ceramic substrate 1unit When mounted ceramic substrate Conditions Ratings +150 Unit
Electrical Characteristics Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) Conditions ID=-1mA, VGS=0V VDS=-20V, VGS=0V VGS=±8V, VDS=0V VDS=-10V, ID=-1mA VDS=-10V, ID=-1.5A Ratings -0.4 -1.3 Unit
Marking
Continued next page.
SANYO Semiconductor Co.,Ltd. products described contained herein are, with regard "standard application", intended general electronics equipment (home appliances, equipment, communication device, office equipment, industrial equipment etc.). products mentioned herein shall intended "special application" (medical equipment whose purpose sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level reliability directly threaten human lives case failure malfunction product cause harm human bodies, shall they grant guarantee thereof. should intend products applications outside standard applications customer considering such and/or outside scope intended standard applications, please consult with prior intended use. there consultation inquiry before intended use, customer shall solely responsible use. Specifications SANYO Semiconductor Co.,Ltd. products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer' products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer' products equipment.
41509PE TC-00001891 A1445-1/4
EMH2308
Continued from preceding page.
Parameter Symbol RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Ciss Coss Crss td(on) td(off) Conditions ID=-3A, VGS=-4.5V ID=-1.0A, VGS=-2.5V ID=-0.5A, VGS=-1.8V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=-10V, VGS=-4.5V, ID=-3A VDS=-10V, VGS=-4.5V, ID=-3A VDS=-10V, VGS=-4.5V, ID=-3A IS=-3A, VGS=0V Ratings -0.83 -1.2 Unit
Static Drain-to-Source On-State Resistance
Package Dimensions
unit (typ) 7045-002
Electrical Connection
0.125
Source1 Gate1 Source2 Gate2 Drain2 Drain2 Drain1 Drain1
view
Source1 Gate1 Source2 Gate2 Drain2 Drain2 Drain1 Drain1 SANYO EMH8
Switching Time Test Circuit
VDD= -10V
-4.5V
0.05
0.75
PW=10s D.C.1%
-1.5A RL=6.67 VOUT
EMH2308
A1445-2/4
EMH2308
-3.5 -2.5
-3.0
-5.0 -4.5 -4.0
VDS= -10V
-2.5
Drain Current,
Drain Current,
-10V
-2.0
-3.5 -3.0 -2.5 -2.0
-1.5
-0.5
-1.0 -0.5
-1.5V
VGS= -1.2V
-0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2
Drain-to-Source Voltage,
RDS(on)
IT14533
Gate-to-Source Voltage,
-1.5
-1.0
RDS(on)
IT14534
Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
-0.5A
-1.8
-1.0A 2.5V -VGS -3.0A -4.5
Gate-to-Source Voltage,
IT14535
Ambient Temperature,
IT14536
Forward Transfer Admittance,
VDS= -10V
VGS=0V
Source Current,
-0.01
-1.0 -0.1
-0.1
-1.0
-0.01 -0.3
-0.4
-0.5
-0.6 -0.7 -0.8
-0.9
-1.0
-1.1
Drain Current,
IT14537
Time
Ciss, Coss, Crss
Diode Forward Voltage,
IT14538
VDD= -10V VGS= -4.5V Ciss, Coss, Crss
f=1MHz
Switching Time, Time
-0.01 -0.1 -1.0 IT14539
Ciss
td(off)
td(on)
Coss Crss
Drain Current,
Drain-to-Source Voltage,
IT14540
A1445-3/4
EMH2308
-4.5 -4.0 -3.5
VDS= -10V Drain Current,
-1.0 -0.1
IDP= -20A
PW10s
Gate-to-Source Voltage,
-3.0 -2.5 -2.0 -1.5 -1.0 -0.5
Operation this area limited RDS(on).
-0.01 -0.01
Ta=25°C Single pulse When mounted ceramic substrate 1unit
-0.1 -1.0
Total Gate Charge,
IT14541
Drain-to-Source Voltage,
IT14542
Allowable Power Dissipation,
When mounted ceramic substrate
Ambient Temperature,
IT14543
Note usage Since EMH2308 MOSFET product, please avoid using this device vicinity highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor Co.,Ltd. products described contained herein. SANYO Semiconductor Co.,Ltd. strives supply high-quality high-reliability products, however, semiconductor products fail malfunction with some probability. possible that these probabilistic failures malfunction could give rise accidents events that could endanger human lives, trouble that could give rise smoke fire, accidents that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor Co.,Ltd. products described contained herein controlled under applicable local export control laws regulations, such products require export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written consent SANYO Semiconductor Co.,Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor Co.,Ltd. product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. Upon using technical information products described herein, neither warranty license shall granted with regard intellectual property rights other rights SANYO Semiconductor Co.,Ltd. third party. SANYO Semiconductor Co.,Ltd. shall liable claim suits with regard third party's intellectual property rights which resulted from technical information products mentioned above.
This catalog provides information April, 2009. Specifications information herein subject change without notice.
A1445-4/4

EMH2308 EMH2308 Features P-Channel Silicon MOSFET

Top Searches for this datasheet

Other recent searches