RD1006LN RD1006LN Features Diffused Junction Silicon Di

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

RD1006LN RD1006LN Features Diffused Junction Silicon Di

Datasheet Thumbnail

Top Searches for this datasheet

Ordering number ENA1442
RD1006LN
RD1006LN
Features
Diffused Junction Silicon Diode
High-Speed Switching Diode
High breakdown voltage (VRRM=600V). High reliability. One-point fixing type plastic molded package facilitating easy mounting heat dissipation. Fast reverse recovery time. noise time reverse recovery.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Peak Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM Conditions Ratings PW100s, duty cycle50% Sine wave 10ms +150 Unit
IFSM
Tstg
Electrical Characteristics Ta=25°C
Parameter Reverse Voltage Forward Voltage Reverse Current Reverse Recovery Time Thermal Resistance Symbol trr1 trr2 Rth(j-c) IR=1mA IF=10A VR=600V IF=10A, dt=100A/s IF=0.5A, IR=1A Junction-Case Smoothed 3.22 Conditions Ratings 1.45 Unit
SANYO Semiconductor Co.,Ltd. products described contained herein are, with regard "standard application", intended general electronics equipment (home appliances, equipment, communication device, office equipment, industrial equipment etc.). products mentioned herein shall intended "special application" (medical equipment whose purpose sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level reliability directly threaten human lives case failure malfunction product cause harm human bodies, shall they grant guarantee thereof. should intend products applications outside standard applications customer considering such and/or outside scope intended standard applications, please consult with prior intended use. there consultation inquiry before intended use, customer shall solely responsible use. Specifications SANYO Semiconductor Co.,Ltd. products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer' products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer' products equipment.
51309SA TC-00001965 A1442-1/3
RD1006LN
Package Dimensions
unit (typ) 7509-004
10.0
16.1
16.0
0.75 14.0
Contact Cathode Anode SANYO TO-220FI(LS)
2.55
2.55
Junction Capacitance,
f=100kHz
Forward Current,
0.01
0.001
Forward Voltage,
Surge Forward Current, IFSM(Peak)
Current waveform 50Hz sine wave
Transient Thermal Resistance Rth(j-c)
IFSM
IT13676
Reverse Voltage,
Rth(j-c)
IT13677
0.01
20ms
0.001
70.01
Time,
IT13678
Time,
IT14509
A1442-2/3
RD1006LN
SANYO Semiconductor Co.,Ltd. assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor Co.,Ltd. products described contained herein. SANYO Semiconductor Co.,Ltd. strives supply high-quality high-reliability products, however, semiconductor products fail malfunction with some probability. possible that these probabilistic failures malfunction could give rise accidents events that could endanger human lives, trouble that could give rise smoke fire, accidents that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor Co.,Ltd. products described contained herein controlled under applicable local export control laws regulations, such products require export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written consent SANYO Semiconductor Co.,Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor Co.,Ltd. product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. Upon using technical information products described herein, neither warranty license shall granted with regard intellectual property rights other rights SANYO Semiconductor Co.,Ltd. third party. SANYO Semiconductor Co.,Ltd. shall liable claim suits with regard third party's intellectual property rights which resulted from technical information products mentioned above.
This catalog provides information May, 2009. Specifications information herein subject change without notice.
A1442-3/3

RD1006LN RD1006LN Features Diffused Junction Silicon Di

Top Searches for this datasheet

Other recent searches