ECH8675 ECH8675 Features P-Channel Silicon MOSFET

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ECH8675 ECH8675 Features P-Channel Silicon MOSFET

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Ordering number ENA1437
ECH8675
ECH8675
Features
P-Channel Silicon MOSFET
General-Purpose Switching Device Applications
1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS Tstg PW10s, duty cycle1% When mounted ceramic substrate 1unit When mounted ceramic substrate Conditions Ratings -4.5 +150 Unit
Electrical Characteristics Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) Conditions ID=-1mA, VGS=0V VDS=-20V, VGS=0V VGS=±8V, VDS=0V VDS=-10V, ID=-1mA VDS=-10V, ID=-3A Ratings -0.4 -1.3 Unit
Marking
Continued next page.
SANYO Semiconductor Co.,Ltd. products described contained herein are, with regard "standard application", intended general electronics equipment (home appliances, equipment, communication device, office equipment, industrial equipment etc.). products mentioned herein shall intended "special application" (medical equipment whose purpose sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level reliability directly threaten human lives case failure malfunction product cause harm human bodies, shall they grant guarantee thereof. should intend products applications outside standard applications customer considering such and/or outside scope intended standard applications, please consult with prior intended use. there consultation inquiry before intended use, customer shall solely responsible use. Specifications SANYO Semiconductor Co.,Ltd. products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer' products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer' products equipment.
40809PE TC-00001913 A1437-1/4
ECH8675
Continued from preceding page.
Parameter Symbol RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Ciss Coss Crss td(on) td(off) Conditions ID=-3A, VGS=-4.5V ID=-1.5A, VGS=-2.5V ID=-0.5A, VGS=-1.8V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=-10V, VGS=-4.5V, ID=-4.5A VDS=-10V, VGS=-4.5V, ID=-4.5A VDS=-10V, VGS=-4.5V, ID=-4.5A IS=-4.5A, VGS=0V Ratings -0.82 -1.2 Unit
Static Drain-to-Source On-State Resistance
Package Dimensions
unit (typ) 7011A-001
View 0.25 0.15 0.02
Electrical Connection
Source1 Gate1 Source2 Gate2 Drain2 Drain2 Drain1 Drain1
view
0.25
0.65
Source1 Gate1 Source2 Gate2 Drain2 Drain2 Drain1 Drain1
View
0.07
SANYO ECH8
Switching Time Test Circuit
-4.5V VDD= -10V
PW=10s D.C.1%
RL=3.33 VOUT
ECH8675
A1437-2/4
ECH8675
-4.5V -2.5
-4.5
-6.0
-1.8V
VDS= -10V
-4.0 -3.5
Drain Current,
-8.0V
Drain Current,
-3.0 -2.5 -2.0 -1.5 -1.0 -0.5
Ta=7
-0.5 -1.0
VGS= -1.5V
25°C
-1.5
-25°C
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
-2.0
-2.5 IT12999
Drain-to-Source Voltage,
RDS(on)
IT12998
Gate-to-Source Voltage,
RDS(on)
Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) Static Drain-to-Source On-State Resistance, RDS(on)
-1.8V
-0.5A
-1.5A -3.0A
-1.5A -2.5V -3.0A -4.5
Gate-to-Source Voltage,
IT14506 -1.0 -0.1
Ambient Temperature,
IT14507
Forward Transfer Admittance,
VDS= -10V
VGS=0V
-0.01
Source Current,
-0.1
-1.0
Drain Current,
1000
IT13002
-0.01
-0.2
-0.4
Ta=7 25°C -25°
-0.6
-0.8
-1.0
-1.2 IT13003
Time
VDD= -10V VGS= -4.5V Ciss, Coss, Crss
Ciss, Coss, Crss
Diode Forward Voltage,
f=1MHz
Switching Time, Time
-0.01 -0.1 -1.0 IT13004 1000
Ciss
td(off)
td(on)
Coss Crss
Drain Current,
Drain-to-Source Voltage,
IT13005
A1437-3/4
ECH8675
-4.5 -4.0 -3.5
VDS= -10V -4.5A Drain Current,
Gate-to-Source Voltage,
-1.0 -0.1
IDP= -30A
PW10s
-4.5A
-3.0 -2.5 -2.0 -1.5 -1.0 -0.5 IT13006
Operation this area limited RDS(on).
-0.01 -0.01
Ta=25°C Single pulse When mounted ceramic substrate 1unit
-0.1 -1.0
Total Gate Charge,
Drain-to-Source Voltage,
IT14508
Allowable Power Dissipation,
When mounted ceramic substrate
Ambient Temperature,
IT14505
Note usage Since ECH8675 MOSFET product, please avoid using this device vicinity highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor Co.,Ltd. products described contained herein. SANYO Semiconductor Co.,Ltd. strives supply high-quality high-reliability products, however, semiconductor products fail malfunction with some probability. possible that these probabilistic failures malfunction could give rise accidents events that could endanger human lives, trouble that could give rise smoke fire, accidents that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor Co.,Ltd. products described contained herein controlled under applicable local export control laws regulations, such products require export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written consent SANYO Semiconductor Co.,Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor Co.,Ltd. product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. Upon using technical information products described herein, neither warranty license shall granted with regard intellectual property rights other rights SANYO Semiconductor Co.,Ltd. third party. SANYO Semiconductor Co.,Ltd. shall liable claim suits with regard third party's intellectual property rights which resulted from technical information products mentioned above.
This catalog provides information April, 2009. Specifications information herein subject change without notice.
A1437-4/4

ECH8675 ECH8675 Features P-Channel Silicon MOSFET

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