ECH8309 ECH8309 Features P-Channel Silicon MOSFET

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ECH8309 ECH8309 Features P-Channel Silicon MOSFET

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Ordering number ENA1418
ECH8309
ECH8309
Features
P-Channel Silicon MOSFET
General-Purpose Switching Device Applications
1.8V drive. Halogen free compliance.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS Tstg PW10s, duty cycle1% When mounted ceramic substrate Conditions Ratings -9.5 +150 Unit
Electrical Characteristics Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=-1mA, VGS=0V VDS=-12V, VGS=0V VGS=±8V, VDS=0V VDS=-6V, ID=-1mA VDS=-6V, ID=-4.5A ID=-4.5A, VGS=-4.5V ID=-2A, VGS=-2.5V ID=-1A, VGS=-1.8V -0.4 Ratings -1.3 Unit
Marking
Continued next page.
SANYO Semiconductor Co.,Ltd. products described contained herein are, with regard "standard application", intended general electronics equipment (home appliances, equipment, communication device, office equipment, industrial equipment etc.). products mentioned herein shall intended "special application" (medical equipment whose purpose sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level reliability directly threaten human lives case failure malfunction product cause harm human bodies, shall they grant guarantee thereof. should intend products applications outside standard applications customer considering such and/or outside scope intended standard applications, please consult with prior intended use. there consultation inquiry before intended use, customer shall solely responsible use. Specifications SANYO Semiconductor Co.,Ltd. products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer' products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer' products equipment.
22509PE TC-00001633 A1418-1/4
ECH8309
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) td(off) Conditions VDS=-6V, f=1MHz VDS=-6V, f=1MHz VDS=-6V, f=1MHz specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=-6V, VGS=-4.5V, ID=-9.5A VDS=-6V, VGS=-4.5V, ID=-9.5A VDS=-6V, VGS=-4.5V, ID=-9.5A IS=-9.5A, VGS=0V Ratings 1780 -0.8 -1.2 Unit
Package Dimensions
unit (typ) 7011A-002
View 0.25 0.15 0.02
Electrical Connection
Source Source Source Gate Drain Drain Drain Drain
view
0.25
0.65
Source Source Source Gate Drain Drain Drain Drain
View
0.07
SANYO ECH8
Switching Time Test Circuit
VDD=
-4.5V
PW=10s D.C.1%
-4.5A RL=1.3 VOUT
ECH8309
A1418-2/4
ECH8309
-8.0V -6.0V
-4.5 -2.5
VDS=
-1.8
Drain Current,
Drain Current,
Ta=7
-0.5
-1.5V
VGS= -1.2V
-0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0
-25°
-1.0
-1.5
-2.0
-2.5 IT13986
Drain-to-Source Voltage,
RDS(on)
IT13985
Gate-to-Source Voltage,
RDS(on)
Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on)
-1.0A -2.0A -4.5A
Static Drain-to-Source On-State Resistance, RDS(on)
-1.0A
2.0A -2.5V, -VGS -4.5A -4.5
Gate-to-Source Voltage,
-0.01
IT14418
Ambient Temperature,
IT14419
Forward Transfer Admittance,
VDS=
VGS=0V
Source Current,
-1.0 -0.1
-0.1
-1.0
Drain Current,
1000
Time
IT13989
-0.01
-0.2
-0.4
25°C -25°
-0.6 -0.8
-1.0
-1.2 IT13990
Ciss, Coss, Crss
Diode Forward Voltage,
VDD= VGS= -4.5V Ciss, Coss, Crss
f=1MHz
Switching Time, Time
-0.01
Ciss
td(off)
1000
Coss Crss
td(on)
-0.1 -1.0 IT13991 IT13992
Drain Current,
Drain-to-Source Voltage,
A1418-3/4
ECH8309
-4.5 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5
VDS= -9.5A
Gate-to-Source Voltage,
-100
IDP= -40A
PW10s
Drain Current,
-1.0 -0.1
-9.5A
Operation this area limited RDS(on).
-0.01 -0.01
Ta=25°C Single pulse When mounted ceramic substrate
-0.1 -1.0
Total Gate Charge,
IT14420
Drain-to-Source Voltage,
IT14421
Allowable Power Dissipation,
When mounted ceramic substrate
Ambient Temperature,
IT14422
Note usage Since ECH8309 MOSFET product, please avoid using this device vicinity highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor Co.,Ltd. products described contained herein. SANYO Semiconductor Co.,Ltd. strives supply high-quality high-reliability products, however, semiconductor products fail malfunction with some probability. possible that these probabilistic failures malfunction could give rise accidents events that could endanger human lives, trouble that could give rise smoke fire, accidents that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor Co.,Ltd. products described contained herein controlled under applicable local export control laws regulations, such products require export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written consent SANYO Semiconductor Co.,Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor Co.,Ltd. product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. Upon using technical information products described herein, neither warranty license shall granted with regard intellectual property rights other rights SANYO Semiconductor Co.,Ltd. third party. SANYO Semiconductor Co.,Ltd. shall liable claim suits with regard third party's intellectual property rights which resulted from technical information products mentioned above.
This catalog provides information February, 2009. Specifications information herein subject change without notice.
A1418-4/4

ECH8309 ECH8309 Features P-Channel Silicon MOSFET

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