| The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers. |
2SK4192LS 2SK4192LS Features N-Channel Silicon MOSFET
Top Searches for this datasheetOrdering number ENA1413 2SK4192LS 2SK4192LS Features N-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistance, input capacitance, ultrahigh-speed switching. Adoption high reliability process. Attachment workability good Mica-less package. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) Avalanche Current Symbol VDSS VGSS IDc*1 IDpack*2 Tstg Limited only maximum temperature Tch=150°C Tc=25°C (SANYO's ideal heat dissipation condition*3) PW10s, duty cycle1% Tc=25°C (SANYO's ideal heat dissipation condition*3) Conditions Ratings +150 Unit Note Shows chip capability Package limited SANYO's condition radiation from backside. method applying silicone grease backside device attaching device water-cooled radiator made aluminium. VDD=99V, L=5mH, IAV=7A L5mH, single pulse Marking K4192 SANYO Semiconductor Co.,Ltd. products described contained herein are, with regard "standard application", intended general electronics equipment (home appliances, equipment, communication device, office equipment, industrial equipment etc.). products mentioned herein shall intended "special application" (medical equipment whose purpose sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level reliability directly threaten human lives case failure malfunction product cause harm human bodies, shall they grant guarantee thereof. should intend products applications outside standard applications customer considering such and/or outside scope intended standard applications, please consult with prior intended use. there consultation inquiry before intended use, customer shall solely responsible use. Specifications SANYO Semiconductor Co.,Ltd. products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer' products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer' products equipment. 20409QB TC-00001838 A1413-1/5 2SK4192LS Electrical Characteristics Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) td(off) Conditions ID=10mA, VGS=0V VDS=320V, VGS=0V VGS=±30V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=3.5A ID=3.5A, VGS=10V VDS=30V, f=1MHz VDS=30V, f=1MHz VDS=30V, f=1MHz specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=200V, VGS=10V, ID=7A VDS=200V, VGS=10V, ID=7A VDS=200V, VGS=10V, ID=7A IS=7A, VGS=0V Ratings ±100 1.04 Unit Package Dimensions unit (typ) 7509-002 10.0 16.1 16.0 0.75 14.0 Gate Drain Source SANYO TO-220FI(LS) 2.55 2.55 Switching Time Test Circuit PW=10s D.C.0.5% VGS=10V VDD=200V Avalanche Resistance Test Circuit ID=3.5A RL=57 VOUT 2SK4192LS 2SK4192LS RGS=50 A1413-2/5 2SK4192LS Tc=25°C VDS=20V -25°C 25°C 75°C Drain Current, Drain Current, VGS=5V IT14402 Drain-to-Source Voltage, RDS(on) Gate-to-Source Voltage, RDS(on) IT14403 ID=3.5A Static Drain-to-Source On-State Resistance, RDS(on) Static Drain-to-Source On-State Resistance, RDS(on) Tc=75°C 25°C -25°C Gate-to-Source Voltage, IT14404 Case Temperature, IT14405 Forward Transfer Admittance, VDS=10V VGS=0V Source Current, 0.01 Tc=7 25°C -25°C IT14407 Drain Current, Time IT14406 Ciss, Coss, Crss Diode Forward Voltage, VDD=200V VGS=10V Ciss, Coss, Crss f=1MHz 1000 Switching Time, Time Ciss (off) Coss td(on) IT14408 Crss IT14409 Drain Current, Drain-to-Source Voltage, A1413-3/5 2SK4192LS VDS=200V ID=7A Drain Current, IDP=23A IDc(*1)=7A IDpack(*2)=6.1A PW<10s Gate-to-Source Voltage, Operation this area limited RDS(on). Tc=25°C Single pulse 0.01 Shows chip capability SANYO's ideal heat dissipation condition Total Gate Charge, IT14410 Drain-to-Source Voltage, IT14411 Allowable Power Dissipation, Allowable Power Dissipation, Ambient Temperature, IT14412 Case Temperature, IT14413 Avalanche Energy derating factor IT10478 Ambient Temperature, A1413-4/5 2SK4192LS Note usage Since 2SK4192LS MOSFET product, please avoid using this device vicinity highly charged objects. SANYO Semiconductor Co.,Ltd. assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor Co.,Ltd. products described contained herein. SANYO Semiconductor Co.,Ltd. strives supply high-quality high-reliability products, however, semiconductor products fail malfunction with some probability. possible that these probabilistic failures malfunction could give rise accidents events that could endanger human lives, trouble that could give rise smoke fire, accidents that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor Co.,Ltd. products described contained herein controlled under applicable local export control laws regulations, such products require export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written consent SANYO Semiconductor Co.,Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor Co.,Ltd. product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. Upon using technical information products described herein, neither warranty license shall granted with regard intellectual property rights other rights SANYO Semiconductor Co.,Ltd. third party. SANYO Semiconductor Co.,Ltd. shall liable claim suits with regard third party's intellectual property rights which resulted from technical information products mentioned above. This catalog provides information February, 2009. Specifications information herein subject change without notice. A1413-5/5 Other recent searchesTPCP8501 - TPCP8501 TPCP8501 Datasheet TD0114A - TD0114A TD0114A Datasheet KCSA04-102 - KCSA04-102 KCSA04-102 Datasheet JW050R - JW050R JW050R Datasheet JW075R - JW075R JW075R Datasheet JW100R - JW100R JW100R Datasheet JW150R - JW150R JW150R Datasheet DB1501 - DB1501 DB1501 Datasheet DB1507 - DB1507 DB1507 Datasheet ADIS16400 - ADIS16400 ADIS16400 Datasheet ADIS16405 - ADIS16405 ADIS16405 Datasheet ADG741 - ADG741 ADG741 Datasheet ADG742 - ADG742 ADG742 Datasheet
Privacy Policy | Disclaimer |