ATP104 ATP104 Features P-Channel Silicon MOSFET Ge

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ATP104 ATP104 Features P-Channel Silicon MOSFET Ge

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Ordering number ENA1406
ATP104
ATP104
Features
P-Channel Silicon MOSFET
General-Purpose Switching Device Applications
ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW10s) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) Avalanche Current Symbol VDSS VGSS Tstg PW10s, duty cycle1% Tc=25°C Conditions Ratings -225 +150 Unit
Note VDD=15V, L=100H, IAV=38A L100H, Single pulse
Electrical Characteristics Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS IGSS Conditions -1mA, VGS=0V ID=-30V, VGS=0V VDS=VGS=±16V, VDS=0V Ratings Unit
Marking ATP104
Continued next page.
SANYO Semiconductor Co.,Ltd. products described contained herein are, with regard "standard application", intended general electronics equipment (home appliances, equipment, communication device, office equipment, industrial equipment etc.). products mentioned herein shall intended "special application" (medical equipment whose purpose sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level reliability directly threaten human lives case failure malfunction product cause harm human bodies, shall they grant guarantee thereof. should intend products applications outside standard applications customer considering such and/or outside scope intended standard applications, please consult with prior intended use. there consultation inquiry before intended use, customer shall solely responsible use. Specifications SANYO Semiconductor Co.,Ltd. products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer' products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer' products equipment.
20409PA TC-00001830 A1406-1/4
ATP104
Continued from preceding page.
Parameter Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol VGS(off) RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) td(off) Conditions -10V, ID=-1mA VDS=-10V, ID=-38A VDS=-38A, VGS=-10V ID=-19A, VGS=-4.5V ID=VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=-15V, VGS=-10V, ID=-75A VDS=-15V, VGS=-10V, ID=-75A VDS=-15V, VGS=-10V, ID=-75A IS=-75A, VGS=0V Ratings -1.2 3950 -1.02 -1.5 13.5 -2.6 Unit
Package Dimensions
unit (typ) 7057-001
0.55
Gate Drain Source Drain SANYO ATPAK
Switching Time Test Circuit
-10V VDD= -15V
PW=10s D.C.1%
-38A RL=0.39 VOUT
ATP104
6.05
A1406-2/4
ATP104
-8.0
-4.0V
-25°
-1.5 -2.0 -2.5
0.0V
Drain Current,
-16.0
Drain Current,
VGS= -3.5V
-0.5 -1.0 -1.5 -2.0 IT14388 -0.5 -1.0
-3.0
-3.5
-4.0
-4.5 IT14389 IT14391 -1.4 IT14393
Drain-to-Source Voltage,
RDS(on)
Cutoff Voltage, VGS(off)
RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
Tc=25°C Single pulse
-19A -38A
Single pulse
-VGS
4.5V
-38A -10V
Gate-to-Source Voltage,
IT14390 -100 VGS=0V Single pulse -1.0 -0.1 -0.01 -0.001 -0.2 -0.4
Case Temperature,
Forward Transfer Admittance,
VDS= -10V
-0.1
Source Current,
25°C
-1.0
-100 IT14392
-0.6
-25°
-0.8
-1.0
-1.2
Drain Current,
Time
VDD= -15V VGS= -10V
10000
Ciss, Coss, Crss
Diode Forward Voltage,
f=1MHz
Ciss
Switching Time, Time
1000
Ciss, Coss, Crss
-0.1
td(off)
1000
Coss
Crss
td(on)
-1.0
-100 IT14394
75°C
IT14395
Tc=25°C
-100
VGS(off)
VDS= -10V
Drain Current,
Drain-to-Source Voltage,
A1406-3/4
ATP104
VDS= -15V -75A Drain Current,
-100 -1.0
IDP= -225A -75A PW10s
Gate-to-Source Voltage,
Operation this area limited RDS(on).
-0.1 -0.1
Tc=25°C Single pulse
-1.0
Total Gate Charge,
IT14396
Drain-to-Source Voltage,
IT14397
Allowable Power Dissipation,
Avalanche Energy derating factor
IT10478
Case Temperature,
IT14398
Ambient Temperature,
Note usage Since ATP104 MOSFET product, please avoid using this device vicinity highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor Co.,Ltd. products described contained herein. SANYO Semiconductor Co.,Ltd. strives supply high-quality high-reliability products, however, semiconductor products fail malfunction with some probability. possible that these probabilistic failures malfunction could give rise accidents events that could endanger human lives, trouble that could give rise smoke fire, accidents that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor Co.,Ltd. products described contained herein controlled under applicable local export control laws regulations, such products require export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written consent SANYO Semiconductor Co.,Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor Co.,Ltd. product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. Upon using technical information products described herein, neither warranty license shall granted with regard intellectual property rights other rights SANYO Semiconductor Co.,Ltd. third party. SANYO Semiconductor Co.,Ltd. shall liable claim suits with regard third party's intellectual property rights which resulted from technical information products mentioned above.
This catalog provides information February, 2009. Specifications information herein subject change without notice.
A1406-4/4

ATP104 ATP104 Features P-Channel Silicon MOSFET Ge

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