ATP404 ATP404 Features N-Channel Silicon MOSFET Ge

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ATP404 ATP404 Features N-Channel Silicon MOSFET Ge

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Ordering number ENA1405
ATP404
ATP404
Features
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
ON-resistance. Avalanche resistance guarantee. Halogen free compliance.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) Avalanche Current Symbol VDSS VGSS Tstg PW10s, duty cycle1% Tc=25°C Conditions Ratings +150 Unit
Note VDD=30V, L=100H, IAV=48A L100H, Single pulse
Electrical Characteristics Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=±16V, VDS=0V Ratings Unit
Marking ATP404
Continued next page.
SANYO Semiconductor Co.,Ltd. products described contained herein are, with regard "standard application", intended general electronics equipment (home appliances, equipment, communication device, office equipment, industrial equipment etc.). products mentioned herein shall intended "special application" (medical equipment whose purpose sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level reliability directly threaten human lives case failure malfunction product cause harm human bodies, shall they grant guarantee thereof. should intend products applications outside standard applications customer considering such and/or outside scope intended standard applications, please consult with prior intended use. there consultation inquiry before intended use, customer shall solely responsible use. Specifications SANYO Semiconductor Co.,Ltd. products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer' products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer' products equipment.
12109QA TC-00001833 A1405-1/4
ATP404
Continued from preceding page.
Parameter Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol VGS(off) RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) td(off) Conditions VDS=10V, ID=1mA VDS=10V, ID=48A ID=48A, VGS=10V ID=48A, VGS=4.5V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=30V, VGS=10V, ID=95A VDS=30V, VGS=10V, ID=95A VDS=30V, VGS=10V, ID=95A IS=95A, VGS=0V Ratings 6400 0.95 10.5 Unit
Package Dimensions
unit (typ) 7057-001
0.55
Gate Drain Source Drain SANYO ATPAK
Switching Time Test Circuit
VDD=30V
6.05
Avalanche Resistance Test Circuit
ID=48A RL=0.625 VOUT ATP404 ATP404
PW=10s D.C.1%
A1405-2/4
ATP404
-25°
Drain Current,
Drain Current,
4.5V
VGS=3.0V
IT14377
IT14378 IT14380 IT14382
Drain-to-Source Voltage,
RDS(on)
Cutoff Voltage, VGS(off)
RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
ID=48A Single pulse
Single pulse
Tc=75°C 25°C -25°C
.5V, .0V,
IT14379
Gate-to-Source Voltage,
Case Temperature,
0.01 0.001
Forward Transfer Admittance,
VDS=10V
VGS=0V Single pulse
Drain Current,
IT14381
25°C -25°
Source Current,
Time
VDD=30V VGS=10V
Ciss, Coss, Crss
Diode Forward Voltage,
f=1MHz
Ciss
Switching Time, Time
10000
1000 IT14383
Ciss, Coss, Crss
td(off)
1000
td(on)
Coss
Crss
IT14384
Drain Current,
Drain-to-Source Voltage,
A1405-3/4
75°C
Tc=25°C
VGS(off)
VDS=10V
ATP404
VDS=30V ID=95A Drain Current,
Gate-to-Source Voltage,
1000
IDP=380A
PW10s
IT14385
ID=95A
Operation this area limited RDS(on).
Tc=25°C Single pulse 0.01
Total Gate Charge,
Drain-to-Source Voltage,
IT14386
Allowable Power Dissipation,
Avalanche Energy derating factor
IT10478
Case Temperature,
IT14387
Ambient Temperature,
Note usage Since ATP404 MOSFET product, please avoid using this device vicinity highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor Co.,Ltd. products described contained herein. SANYO Semiconductor Co.,Ltd. strives supply high-quality high-reliability products, however, semiconductor products fail malfunction with some probability. possible that these probabilistic failures malfunction could give rise accidents events that could endanger human lives, trouble that could give rise smoke fire, accidents that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor Co.,Ltd. products described contained herein controlled under applicable local export control laws regulations, such products require export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written consent SANYO Semiconductor Co.,Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor Co.,Ltd. product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. Upon using technical information products described herein, neither warranty license shall granted with regard intellectual property rights other rights SANYO Semiconductor Co.,Ltd. third party. SANYO Semiconductor Co.,Ltd. shall liable claim suits with regard third party's intellectual property rights which resulted from technical information products mentioned above.
This catalog provides information January, 2009. Specifications information herein subject change without notice.
A1405-4/4

ATP404 ATP404 Features N-Channel Silicon MOSFET Ge

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