CPH5871 CPH5871 Features MOSFET N-Channel Silicon MOSFE

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CPH5871 CPH5871 Features MOSFET N-Channel Silicon MOSFE

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Ordering number ENA1401
CPH5871
CPH5871
Features
MOSFET N-Channel Silicon MOSFET Schottky Barrier Diode
General-Purpose Switching Device Applications
Composite type with N-channel sillicon MOSFET schottky barrier diode contained package facilitating high-density mounting. [MOSFET] Ultrahigh-speed switching 1.8V drive [SBD] Short reverse recovery time. forward voltage. Halogen free compliance.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature VDSS VGSS Tstg PW10s, duty cycle1% When mounted ceramic substrate 1unit +125 Symbol Conditions Ratings Unit
Marking
Continued next page.
SANYO Semiconductor Co.,Ltd. products described contained herein are, with regard "standard application", intended general electronics equipment (home appliances, equipment, communication device, office equipment, industrial equipment etc.). products mentioned herein shall intended "special application" (medical equipment whose purpose sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level reliability directly threaten human lives case failure malfunction product cause harm human bodies, shall they grant guarantee thereof. should intend products applications outside standard applications customer considering such and/or outside scope intended standard applications, please consult with prior intended use. there consultation inquiry before intended use, customer shall solely responsible use. Specifications SANYO Semiconductor Co.,Ltd. products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer' products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer' products equipment.
12809PE TC-00001794 A1401-1/5
CPH5871
Continued from preceding page.
Parameter [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IFSM Tstg 50Hz sine wave, cycle +125 +125 Symbol Conditions Ratings Unit
Electrical Characteristics Ta=25°C
Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time IR=0.5mA IF=0.7A IF=1A VR=16V VR=10V, f=1MHz, cycle IF=IR=100mA, specified Test Circuit. 0.45 0.48 0.53 V(BR)DSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) td(off) ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=2A ID=2A, VGS=4.5V ID=1A, VGS=2.5V ID=0.5A, VGS=1.8V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=15V, VGS=4.5V, ID=3.5A VDS=15V, VGS=4.5V, ID=3.5A VDS=15V, VGS=4.5V, ID=3.5A IS=3.5A, VGS=0V Symbol Conditions Ratings Unit
Package Dimensions
unit (typ) 7017A-005
Electrical Connection
0.15
0.05 0.95
Cathode Drain Gate Source Anode
view
Cathode Drain Gate Source Anode SANYO CPH5
A1401-2/5
CPH5871
Switching Time Test Circuit (MOSFET)
4.5V VDD=15V
Test Circuit (SBD)
Duty10% 100mA 10mA
PW=10s D.C.1%
CPH5871
7.0V 4.5V
3.5V 2.5V
[MOSFET] Static Drain-to-Source On-State Resistance, RDS(on)
RDS(on)
ID=1A
100mA
ID=2A RL=7.5 VOUT
[MOSFET] Ta=25°C
1.8V
Drain Current,
0.5A
1.5V
VGS=1.2V
Drain-to-Source Voltage, IT14371 RDS(on) [MOSFET] Forward Transfer Admittance,
Gate-to-Source Voltage,
IT14372
[MOSFET]
VDS=10V
Static Drain-to-Source On-State Resistance, RDS(on)
0.5A 1.8V
=1.0 2.5V 2.0A 4.5V
0.01
Ambient Temperature,
IT14373
Drain Current,
IT14348
A1401-3/5
CPH5871
[MOSFET] VGS=0V Switching Time, Time
Time
[MOSFET] VDD=15V VGS=4.5V
Source Current,
0.01
td(off)
75°C 25°C
td(on)
0.01
IT14350
1000
Diode Forward Voltage, IT14349 Ciss, Coss, Crss [MOSFET] f=1MHz
Drain Current,
[MOSFET] VDS=15V ID=3.5A
Ciss
Ciss, Coss, Crss
Coss
Crss
Gate-to-Source Voltage,
IT14374
IT14351 Drain-to-Source Voltage, [MOSFET]
Total Gate Charge,
[MOSFET]
Drain Current,
ID=3.5A
Allowable Power Dissipation,
IDP=14A
PW10s
When mounted ceramic substrate 1unit
Operation this area limited RDS(on).
0.01
Ta=25°C Single pulse When mounted ceramic substrate
Drain-to-Source Voltage,
IT14375
Ambient Temperature,
10000 1000
[SBD]
IT14376
[SBD]
Ta=125°C 100°C
Reverse Current,
Forward Current,
0.01
0.01
75°C
50°C
25°C
-25°C
75°C 50°C 25°C -25°C
0.001 IT09553 0.0001 IT09554
Forward Voltage,
Reverse Voltage,
A1401-4/5
CPH5871
Average Forward Power Dissipation, PF(AV)
PF(AV)
Rectangular wave
360°
[SBD] Interterminal Capacitance,
[SBD]
(4)(3)
Sine wave
180° 360°
(1)Rectangular wave =60° (2)Rectangular wave =120° (3)Rectangular wave =180° (4)Sine wave =180°
IT09555
Average Output Current,
IFSM
[SBD]
Reverse Voltage,
IT09556
Surge Forward Current, IFSM(Peak)
Current waveform 50Hz sine wave
20ms
0.01
Time,
ID00435
Note usage Since CPH5871 MOSFET product, please avoid using this device vicinity highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor Co.,Ltd. products described contained herein. SANYO Semiconductor Co.,Ltd. strives supply high-quality high-reliability products, however, semiconductor products fail malfunction with some probability. possible that these probabilistic failures malfunction could give rise accidents events that could endanger human lives, trouble that could give rise smoke fire, accidents that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor Co.,Ltd. products described contained herein controlled under applicable local export control laws regulations, such products require export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written consent SANYO Semiconductor Co.,Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor Co.,Ltd. product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. Upon using technical information products described herein, neither warranty license shall granted with regard intellectual property rights other rights SANYO Semiconductor Co.,Ltd. third party. SANYO Semiconductor Co.,Ltd. shall liable claim suits with regard third party's intellectual property rights which resulted from technical information products mentioned above.
This catalog provides information January, 2009. Specifications information herein subject change without notice.
A1401-5/5

CPH5871 CPH5871 Features MOSFET N-Channel Silicon MOSFE

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