MCH3474 MCH3474 Features N-Channel Silicon MOSFET

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MCH3474 MCH3474 Features N-Channel Silicon MOSFET

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Ordering number ENA1397
MCH3474
MCH3474
Features
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
ON-resistance. Ultrahigh speed switching. 1.8V drive.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS Tstg PW10s, duty cycle1% When mounted ceramic substrate Conditions Ratings +150 Unit
Electrical Characteristics Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=2A Ratings Unit
Marking
Continued next page.
SANYO Semiconductor Co.,Ltd. products described contained herein are, with regard "standard application", intended general electronics equipment (home appliances, equipment, communication device, office equipment, industrial equipment etc.). products mentioned herein shall intended "special application" (medical equipment whose purpose sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level reliability directly threaten human lives case failure malfunction product cause harm human bodies, shall they grant guarantee thereof. should intend products applications outside standard applications customer considering such and/or outside scope intended standard applications, please consult with prior intended use. there consultation inquiry before intended use, customer shall solely responsible use. Specifications SANYO Semiconductor Co.,Ltd. products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer' products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer' products equipment.
31809PE TC-00001889 A1397-1/4
MCH3474
Continued from preceding page.
Parameter Symbol RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Ciss Coss Crss td(on) td(off) Conditions ID=2A, VGS=4.5V ID=1A, VGS=2.5V ID=0.5A, VGS=1.8V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=15V, VGS=4.5V, ID=4A VDS=15V, VGS=4.5V, ID=4A VDS=15V, VGS=4.5V, ID=4A IS=4A, VGS=0V Ratings 0.82 Unit
Static Drain-to-Source On-State Resistance
Package Dimensions
unit (typ) 7019A-003
Switching Time Test Circuit
VDD=15V
0.25
0.15
4.5V
ID=2A RL=7.5 VOUT
0.02
PW=10s D.C.1%
0.25 0.65
MCH3474
0.85
0.07
Gate Source Drain SANYO MCPH3
7.0V 4.5V
3.5V 2.5V
VDS=10V
1.8V
Drain Current,
Drain Current,
VGS=1.2V
25°C
-25°C
1.5V
Ta=7
Drain-to-Source Voltage,
IT14344
Gate-to-Source Voltage,
IT14345
A1397-2/4
MCH3474
RDS(on)
Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on)
ID=1A
RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
0.5A
=1.8
=0.5
=1.0 2.5V =2.0 =4.5
Gate-to-Source Voltage,
IT14346
Ambient Temperature,
IT14347
Forward Transfer Admittance,
VDS=10V
VGS=0V
Source Current,
0.01
0.01
75°C 25°C
IT14349
Drain Current,
Time
IT14348
1000
Ciss, Coss, Crss
Ciss
Diode Forward Voltage,
VDD=15V VGS=4.5V Ciss, Coss, Crss
f=1MHz
Switching Time, Time
0.01 IT14350
td(off)
td(on)
Coss
Crss
IT14351
Drain Current,
Drain-to-Source Voltage,
Gate-to-Source Voltage,
VDS=15V ID=4A Drain Current,
IDP=16A ID=4A
IT14352
PW10s
Operation this area limited RDS(on). Ta=25°C Single pulse When mounted ceramic substrate
0.01 0.01
Total Gate Charge,
Drain-to-Source Voltage,
IT14353
A1397-3/4
MCH3474
When mounted ceramic substrate
Allowable Power Dissipation,
Ambient Temperature,
IT14354
Note usage Since MCH3474 MOSFET product, please avoid using this device vicinity highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor Co.,Ltd. products described contained herein. SANYO Semiconductor Co.,Ltd. strives supply high-quality high-reliability products, however, semiconductor products fail malfunction with some probability. possible that these probabilistic failures malfunction could give rise accidents events that could endanger human lives, trouble that could give rise smoke fire, accidents that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor Co.,Ltd. products described contained herein controlled under applicable local export control laws regulations, such products require export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written consent SANYO Semiconductor Co.,Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor Co.,Ltd. product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. Upon using technical information products described herein, neither warranty license shall granted with regard intellectual property rights other rights SANYO Semiconductor Co.,Ltd. third party. SANYO Semiconductor Co.,Ltd. shall liable claim suits with regard third party's intellectual property rights which resulted from technical information products mentioned above.
This catalog provides information March, 2009. Specifications information herein subject change without notice.
A1397-4/4

MCH3474 MCH3474 Features N-Channel Silicon MOSFET

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