ATP206 ATP206 Features N-Channel Silicon MOSFET Ge
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Ordering number ENA1395
ATP206
ATP206
Features
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW10s) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) Avalanche Current Symbol VDSS VGSS Tstg PW10s, duty cycle1% Tc=25°C Conditions Ratings +150 Unit
Note VDD=10V, L=100H, IAV=20A L100H, Single pulse
Electrical Characteristics Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0V VDS=40V, VGS=0V VGS=±16V, VDS=0V Ratings Unit
Marking ATP206
Continued next page.
SANYO Semiconductor Co.,Ltd. products described contained herein are, with regard "standard application", intended general electronics equipment (home appliances, equipment, communication device, office equipment, industrial equipment etc.). products mentioned herein shall intended "special application" (medical equipment whose purpose sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level reliability directly threaten human lives case failure malfunction product cause harm human bodies, shall they grant guarantee thereof. should intend products applications outside standard applications customer considering such and/or outside scope intended standard applications, please consult with prior intended use. there consultation inquiry before intended use, customer shall solely responsible use. Specifications SANYO Semiconductor Co.,Ltd. products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer' products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer' products equipment.
10709PA TC-00001774 A1395-1/4
ATP206
Continued from preceding page.
Parameter Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol VGS(off) RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) td(off) Conditions VDS=10V, ID=1mA VDS=10V, ID=20A ID=20A, VGS=10V ID=10A, VGS=4.5V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=20V, VGS=10V, ID=40A VDS=20V, VGS=10V, ID=40A VDS=20V, VGS=10V, ID=40A IS=40A, VGS=0V Ratings 1630 0.99 Unit
Package Dimensions
unit (typ) 7057-001
0.55
Gate Drain Source Drain SANYO ATPAK
Switching Time Test Circuit
VDD=20V
PW=10s D.C.1%
ID=20A RL=1 VOUT
ATP206
6.05
A1395-2/4
ATP206
VDS=10V
75°C
6.0V
Drain Current,
Drain Current,
16.0V 10.0
4.0V
IT14333
-25°
VGS=3.5V
IT14334 IT14336 IT14338 IT14340
Tc=25°C
Drain-to-Source Voltage,
RDS(on)
Gate-to-Source Voltage,
RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
Single pulse Tc=25°C
Single pulse
ID=10A
4.5V
0.0V
Gate-to-Source Voltage,
IT14335
Case Temperature,
Forward Transfer Admittance,
VDS=10V
VGS=0V Single pulse
Source Current,
25°C
IT14337
0.01 0.001
Drain Current,
Time
Ciss, Coss, Crss
f=1MHz
Diode Forward Voltage,
VDD=20V VGS=10V Ciss, Coss, Crss
Switching Time, Time
Ciss
(off)
1000
td(on)
Coss
Crss
IT14339
Drain Current,
Drain-to-Source Voltage,
A1395-3/4
ATP206
VDS=20V ID=40A Drain Current,
IDP=120A ID=40A
Gate-to-Source Voltage,
IT14341
PW10s
Operation this area limited RDS(on).
Tc=25°C Single pulse
Total Gate Charge,
Drain-to-Source Voltage,
IT14342
Allowable Power Dissipation,
Avalanche Energy derating factor
IT10478
Case Temperature,
IT14343
Ambient Temperature,
Note usage Since ATP206 MOSFET product, please avoid using this device vicinity highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor Co.,Ltd. products described contained herein. SANYO Semiconductor Co.,Ltd. strives supply high-quality high-reliability products, however, semiconductor products fail malfunction with some probability. possible that these probabilistic failures malfunction could give rise accidents events that could endanger human lives, trouble that could give rise smoke fire, accidents that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor Co.,Ltd. products described contained herein controlled under applicable local export control laws regulations, such products require export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written consent SANYO Semiconductor Co.,Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor Co.,Ltd. product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. Upon using technical information products described herein, neither warranty license shall granted with regard intellectual property rights other rights SANYO Semiconductor Co.,Ltd. third party. SANYO Semiconductor Co.,Ltd. shall liable claim suits with regard third party's intellectual property rights which resulted from technical information products mentioned above.
This catalog provides information January, 2009. Specifications information herein subject change without notice.
A1395-4/4
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