VEC1107 VEC1107 Applications Epitaxial Planar Silicon T

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VEC1107 VEC1107 Applications Epitaxial Planar Silicon T

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Ordering number ENA1389
VEC1107
VEC1107
Applications
Epitaxial Planar Silicon Transistor
Converter Applications
Charge line switching, load switching, high speed switching.
Features
Adoption MBIT process. High current capacitance. collector-to-emitter saturation voltage. High speed switching. Ultrasmall package facilitates miniaturization products (mounting height 0.75mm). High allowable power dissipation.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Tstg When mounted ceramic substrate Conditions Ratings -600 +150 Unit
Marking
SANYO Semiconductor Co.,Ltd. products described contained herein are, with regard "standard application", intended general electronics equipment (home appliances, equipment, communication device, office equipment, industrial equipment etc.). products mentioned herein shall intended "special application" (medical equipment whose purpose sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level reliability directly threaten human lives case failure malfunction product cause harm human bodies, shall they grant guarantee thereof. should intend products applications outside standard applications customer considering such and/or outside scope intended standard applications, please consult with prior intended use. there consultation inquiry before intended use, customer shall solely responsible use. Specifications SANYO Semiconductor Co.,Ltd. products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer' products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer' products equipment.
D2408EA TC-00001781 A1389-1/4
VEC1107
Electrical Characteristics Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current Emitter Cutoff Current Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol ICBO IEBO IECO VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO tstg Conditions VCB= -30V, IE=0A VEB= -4V, IC=0A VEC= -4.5V, IB=0A VCE= -2V, -500mA VCE= -10V, -500mA VCB= -10V, f=1MHz -1.5A, -30mA -1.5A, -75mA -1.5A, -30mA -10A, IE=0A -1mA, RBE= -10A, IC=0A specified Test Circuit. specified Test Circuit. specified Test Circuit. -155 -105 -0.83 -230 -155 -1.2 Ratings -0.1 -0.1 Unit
Package Dimensions
unit (typ) 7012-011
0.25
Switching Time Test Circuit
100F 470F VCC= -12V Vout
PW=20s D.C.1% 0.15 INPUT
0.25
0.65
VBE=5V
IC=-20IB1=20IB2=-2.5A 0.75
Emitter Emitter Emitter Base Collector Collector Collector Collector SANYO VEC8
-2.0
0.07
-4.0
VCE=
-10mA
-3.5
Collector Current,
Collector Current,
-1.6
-8mA
-3.0 -2.5 -2.0 -1.5 -1.0 -0.5
-50m
-6mA
-4mA
-1.2
-0.8
-2mA
-0.4
IB=0mA
-200 -400 -600 -800 -1000 IT01743
Ta=7 25°C -25°C
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2 IT01744
Collector-to-Emitter Voltage,
Base-to-Emitter Voltage,
A1389-2/4
VEC1107
1000
VCE= Collector-to-Emitter Saturation Voltage, VCE(sat)
Ta=75°C
-1.0 -0.1
VCE(sat)
IB=20
Current Gain,
25°C -25°C
-0.01
-0.01
-0.1
-1.0
Collector Current,
VCB(sat)
IT01745
-0.001 -0.01
-0.1
-1.0
Collector Current,
VBE(sat)
IT01746
IB=50 Base-to-Emitter Saturation Voltage, VBE(sat)
IB=50
Collector-to-Emitter Saturation Voltage, VCE(sat)
-1.0 -0.1
-1.0 -0.1 -0.01
-25°C
75°C
25°C
75°C
-0.1
-0.01 -0.01
-1.0
Collector Current,
IT01747
-0.1
-1.0
Collector Current,
1000
IT01748
f=1MHz Gain-Bandwidth Product,
VCE= -10V
Output Capacitance,
-1.0
IT01749
-100
-1000
Collector-to-Base Voltage,
Forward Bias
Collector Current,
IT01750
ICP=
Collector Current,
-1.0 -0.1
Collector Dissipation,
When mounted ceramic substrate
-0.01 -0.1
Ta=25°C Single pulse When mounted ceramic substrate
-1.0
Collector-to-Emitter Voltage,
IT14312
Ambient Temperature,
IT14313
A1389-3/4
VEC1107
SANYO Semiconductor Co.,Ltd. assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor Co.,Ltd. products described contained herein. SANYO Semiconductor Co.,Ltd. strives supply high-quality high-reliability products, however, semiconductor products fail malfunction with some probability. possible that these probabilistic failures malfunction could give rise accidents events that could endanger human lives, trouble that could give rise smoke fire, accidents that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor Co.,Ltd. products described contained herein controlled under applicable local export control laws regulations, such products require export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written consent SANYO Semiconductor Co.,Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor Co.,Ltd. product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. Upon using technical information products described herein, neither warranty license shall granted with regard intellectual property rights other rights SANYO Semiconductor Co.,Ltd. third party. SANYO Semiconductor Co.,Ltd. shall liable claim suits with regard third party's intellectual property rights which resulted from technical information products mentioned above.
This catalog provides information December, 2008. Specifications information herein subject change without notice.
A1389-4/4

VEC1107 VEC1107 Applications Epitaxial Planar Silicon T

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