ECH8306 P-Channel Silicon MOSFET ECH8306 Features

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ECH8306 P-Channel Silicon MOSFET ECH8306 Features

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Ordering number ENA0302
ECH8306
P-Channel Silicon MOSFET
ECH8306
Features
General-Purpose Switching Device Applications
ON-resistance. drive.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS Tstg PW10µs, duty cycle1% Mounted ceramic board (900mm2!0.8mm) Conditions Ratings -100 +150 Unit
Electrical Characteristics Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) td(off) Conditions ID=-1mA, VGS=0V VDS=-100V, VGS=0V VGS=±16V, VDS=0V VDS=-10V, ID=-1mA VDS=-10V, ID=-1A ID=-1A, VGS=-10V ID=-0.5A, VGS=-4V VDS=-20V, f=1MHz VDS=-20V, f=1MHz VDS=-20V, f=1MHz specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=-50V, VGS=-10V, ID=-2A VDS=-50V, VGS=-10V, ID=-2A VDS=-50V, VGS=-10V, ID=-2A IS=-2A, VGS=0V Ratings -100 -1.2 1600 13.5 -0.8 -1.2 -2.6 Unit
Marking
SANYO Semiconductor products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest before usingany SANYO Semiconductor products described contained herein such applications. SANYO Semiconductor assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor products described contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
80906 12506PE TB-00001929 A0302-1/4
ECH8306
Package Dimensions unit 7011A-002
View 0.25 0.15
Electrical Connection
0.02
Source Source Source Gate Drain Drain Drain Drain
view
0.25
0.65
Source Source Source Gate Drain Drain Drain Drain
Bottom View
0.07
SANYO ECH8
Switching Time Test Circuit
-10V VDD= -50V RL=50 VOUT
PW=10µs D.C.1%
ECH8306
-10.0V
-2.0
VDS= -10V
Drain Current,
Drain Current,
-1.5
-1.0
Ta=7
-0.5 -1.0 -1.5 -2.0
-0.5
-0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0
-2.5 -3.0 -3.5
Drain-to-Source Voltage,
IT10633
Gate-to-Source Voltage,
25°C -25°C
IT10634
A0302-2/4
ECH8306
RDS(on)
Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on)
RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
-0.5A
Gate-to-Source Voltage,
IT10635
Ambient Temperature,
IT10636
VGS=0V
Forward Transfer Admittance,
VDS= -10V
-0.01 -0.4 -0.6 -0.8 -1.0 -1.2 IT10638
-0.01
-0.1
-1.0
-0.001 -0.2
Drain Current,
1000
IT10637
Time
Ciss, Coss, Crss
f=1MHz
Ciss
Diode Forward Voltage,
VDD= -50V VGS= -10V Ciss, Coss, Crss
Switching Time, Time
-0.01
td(off)
1000
-0.1
25°C
td(on)
Coss
Crss
-0.1 -1.0 IT10639
-25°
Source Current,
-1.0
IT10640
Drain Current,
Drain-to-Source Voltage,
VDS= -50V Drain Current,
IDP= -12A
10µs
Gate-to-Source Voltage,
IT10641
-1.0 -0.1
Operation this area limited RDS(on).
-0.01 -0.01
Ta=25°C Single pulse Mounted ceramic board (900mm2!0.8mm)
7-0.1 7-1.0 7-10
Total Gate Charge,
Drain-to-Source Voltage,
A0302-3/4
-100 IT10642
ECH8306
Allowable Power Dissipation,
Ambient Temperature,
IT10643
Note usage Since ECH8306 MOSFET product, please avoid using this device vicinity highly charged objects.
Specifications SANYO Semiconductor products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Semiconductor Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor products (including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must exported without obtaining export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Semiconductor Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO Semiconductor believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information January, 2006. Specifications information herein subject change without notice.
A0302-4/4

ECH8306 P-Channel Silicon MOSFET ECH8306 Features

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