ECH8618 N-Channel Silicon MOSFET ECH8618 Features

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ECH8618 N-Channel Silicon MOSFET ECH8618 Features

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Ordering number ENA0298
ECH8618
N-Channel Silicon MOSFET
ECH8618
Features
General-Purpose Switching Device Applications
Ultrahigh-speed switching. drive. Composite type, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS Tstg PW10µs, duty cycle1% Mounted ceramic board (900mm2!0.8mm) 1unit Mounted ceramic board (900mm2!0.8mm) Conditions Ratings +150 Unit
Electrical Characteristics Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) td(off) Conditions ID=1mA, VGS=0V VDS=100V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=10V ID=0.5A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. Ratings 11.5 Unit
Marking
Continued next page.
SANYO Semiconductor products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest before usingany SANYO Semiconductor products described contained herein such applications. SANYO Semiconductor assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor products described contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
80906 12506PE TB-00001933 A0298-1/4
ECH8618
Continued from preceding page.
Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Conditions VDS=50V, VGS=10V, ID=2A VDS=50V, VGS=10V, ID=2A VDS=50V, VGS=10V, ID=2A IS=2A, VGS=0V Ratings 13.8 0.80 Unit
Package Dimensions unit 7011A-001
View
0.25
Electrical Connection
0.15
0.02
Source1 Gate1 Source2 Gate2 Drain2 Drain2 Drain1 Drain1
view
0.25
0.65
Source1 Gate1 Source2 Gate2 Drain2 Drain2 Drain1 Drain1
Bottom View
0.07
SANYO ECH8
Switching Time Test Circuit
ID=1A RL=50 VDD=50V
PW=10µs D.C.1%
VOUT
ECH8618
A0298-2/4
ECH8618
VDS=10V
Drain Current,
Drain Current,
10.0
3.0V
VGS=2.5V
Drain-to-Source Voltage,
IT10620
RDS(on)
Gate-to-Source Voltage,
IT10621
RDS(on)
Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
ID=0.5A
Gate-to-Source Voltage,
IT10622
Ambient Temperature,
IT10623
VGS=0V
Forward Transfer Admittance,
VDS=10V
0.01 IT10625
0.01
IT10624
0.001
Drain Current,
1000
Time
VDD=50V VGS=10V Ciss, Coss, Crss
1000
Ciss, Coss, Crss
f=1MHz Ciss
Diode Forward Voltage,
Switching Time, Time
0.01
td(off)
td(on)
Source Current,
Coss Crss
IT10627
Drain Current,
IT10626
Drain-to-Source Voltage,
A0298-3/4
ECH8618
VDS=50V ID=2A
Drain Current,
IDP=12A
10µs
Gate-to-Source Voltage,
ID=2A
Operation this area limited RDS(on).
0.01
Ta=25°C Single pulse Mounted ceramic board (900mm2!0.8mm) 1unit
Total Gate Charge,
IT10628
Mounted ceramic board (900mm2!0.8mm)
Drain-to-Source Voltage,
IT10629
Allowable Power Dissipation,
Ambient Temperature,
IT10630
Note usage Since ECH8618 MOSFET product, please avoid using this device vicinity highly charged objects.
Specifications SANYO Semiconductor products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Semiconductor Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor products (including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must exported without obtaining export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Semiconductor Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO Semiconductor believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information January, 2006. Specifications information herein subject change without notice.
A0298-4/4

ECH8618 N-Channel Silicon MOSFET ECH8618 Features

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