Triple Diffused Planar Silicon Transistor 2SC3083 400V/6A Sw

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Triple Diffused Planar Silicon Transistor 2SC3083 400V/6A Sw

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Ordering number:EN947B
Triple Diffused Planar Silicon Transistor
2SC3083
400V/6A Switching Regulator Applications
Features
High breakdown voltage (VCBO500V). Fast switching speed. Wide ASO.
Package Dimensions
unit:mm 2022A
[2SC3083]
15.6 14.0
20.0
15.0 20.0
Specifications
Absolute Maximum Ratings 25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Tstg Conditions
5.45
5.45
Base Collector Emitter SANYO TO-3PB
Ratings
Unit
PW300s, Duty Cycle10%
Tc=25°C
+150
Electrical Characteristics 25°C
Parameter Collector Cutoff Current Emitter Cutoff Current Current Gain Symbol ICBO IEBO hFE1 hFE2 VCB=400V, IE=0 VEB=5V, IC=0 VCE=5V, IC=0.4A VCE=5V, IC=2A Conditions Ratings Unit
Continued next page. hFE1 2SC3083 classified follows. When specifying hFE1 rank, specify ranks more principle.
Rank
SANYO products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO representative nearest before using SANYO products described contained herein such applications. SANYO assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges,or other parameters) listed products specifications SANYO products described contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51304TN (PC)/N1098HA (KT)/4207KI/3125MW, No.947-1/4
2SC3083
Continued from preceding page.
Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Gain-Bandwidth Product Output Capacitance Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Collector-to-Emitter Sustain Voltage Collector-to-Emitter Sustain Voltage Turn-ON Time Storage Time Fall Time Symbol VCE(sat) VBE(sat) IC=2A, IB=0.4A IC=2A, IB=0.4A VCE=10V, IC=0.4A Conditions Ratings Unit
VCB=10V, f=1MHz V(BR)CBO IC=1mA, IE=0 V(BR)CEO IC=5mA, RBE= V(BR)EBO IE=1mA, IC=0 VCEO(sus) IC=6A, IB=1.2A, L=50µH VCEX(sus)1 IC=6A, IB1=1.2A, L=200µH, IB2=-1.2A, clamped =0.75A, IB1=0.15A, L=200µH, IB2=-0.15A, VCEX(sus)2 clamped IC=3A, IB1=0.6A, IB2=-0.6A, RL=66.6, VCC=200V IC=3A, IB1=0.6A, IB2=-0.6A, RL=66.6, tstg VCC=200V IC=3A, IB1=0.6A, IB2=-0.6A, RL=66.6, VCC=200V
Switching Time Test Circuit
INPUT PW=20s DC1% 100F VBE=-5V 470F VCC=200V OUTPUT
5IB1= -5IB2=IC
3.8A
Collector Current,
Collector Current,
3.4A
3.0A
2.6A 2.4A
800mA
600mA 400mA
2.2A
200mA
IB=0
ITR05305
IB=0
ITR05306
Collector-to-Emitter Voltage,
Collector-to-Emitter Voltage,
VCE=5V Pulse
Current Gain,
VCE=5V Pulse
Collector Current,
Ta=120°C
25°C
-40°C
25°C
-40°
Base-to-Emitter Voltage,
0.01
ITR05307
Collector Current,
ITR05308
No.947-2/4
2SC3083
VCE(sat)
IB=5 Pulse
VBE(sat)
IB=5 Pulse
Collector-to-Emitter Saturation Voltage, (sat)
Base-to-Emitter Saturation Voltage, (sat)
0.01
Ta=-40°C
25°C
120°C
0.01
Collector Current,
ITR05309
Collector Current,
ITR05310
Time
Forward Bias
<50s
Switching Time, time
load IC=5IB1=-5IB2 VCC=200V
Collector Current,
ICP=12A IC=6A operation
isip
Tc=25°C Single pulse
Collector Current,
ITR05311
Collector-to-Emitter Voltage,
1000 ITR05312
Reverse Bias
L=200H IC=-5IB2 Tc=25°C
Test Circuit -IB2 VCC=20V 1000 ITR05313
Collector Dissipation,
Collector Current,
IB2=-1.2A Const IC6A
Collector-to-Emitter Voltage,
Ambient Temperature,
ITR05314
No.947-3/4
2SC3083
Specifications SANYO products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Electric Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO products(including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must expor without obtaining expor license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Electric Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO product that intend use. Information (including circuit diagrams circuit parameters) herein example only guaranteed volume production. SANYO believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information May, 2004. Specifications information herein subject change without notice.
No.947-4/4

Triple Diffused Planar Silicon Transistor 2SC3083 400V/6A Sw

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