3LP01M P-Channel Silicon MOSFET 3LP01M Features Ge

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3LP01M P-Channel Silicon MOSFET 3LP01M Features Ge

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Ordering number EN6139B
3LP01M
P-Channel Silicon MOSFET
3LP01M
Features
General-Purpose Switching Device Applications
ON-resistance. High-speed switching. 2.5V drive.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS Tstg PW10s, duty cycle1% Conditions Ratings -0.1 -0.4 0.15 +150 Unit
Electrical Characteristics Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Sourse Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=-1mA, VGS=0V VDS=-30V, VGS=0V VGS=±8V, VDS=0V VDS=-10V, ID=-100A VDS=-10V, ID=-50mA ID=-50mA, VGS=-4V ID=-30mA, VGS=-2.5V ID=-1mA, VGS=-1.5V -0.4 10.4 15.4 Ratings -1.4 Unit
Marking
Continued next page.
SANYO Semiconductor Co.,Ltd. products described contained herein are, with regard "standard application", intended general electronics equipment (home appliances, equipment, communication device, office equipment, industrial equipment etc.). products mentioned herein shall intended "special application" (medical equipment whose purpose sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level reliability directly threaten human lives case failure malfunction product cause harm human bodies, shall they grant guarantee thereof. should intend products applications outside standard applications customer considering such and/or outside scope intended standard applications, please consult with prior intended use. there consultation inquiry before intended use, customer shall solely responsible use. Specifications SANYO Semiconductor Co.,Ltd. products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer' products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer' products equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
40908 TC-00001304 32406PE TB-00002153 90100 TA-2006 No.6139-1/4
3LP01M
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) td(off) Conditions VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=-10V, VGS=-10V, ID=-100mA VDS=-10V, VGS=-10V, ID=-100mA VDS=-10V, VGS=-10V, ID=-100mA IS=-100mA, VGS=0V Ratings 1.43 0.18 0.25 -0.83 -1.2 Unit
Package Dimensions
unit (typ) 7023-010
0.425
Switching Time Test Circuit
VDD= -15V -50mA RL=300
0.15
PW=10s D.C.1%
VOUT
1.25
0.425
0.65 0.65
3LP01M
Gate Source Drain SANYO
-0.10 -0.09 -0.08
-0.20
VDS= -10V
-3.5V
Drain Current,
-0.18 -0.16 -0.14 -0.12 -0.10 -0.08 -0.06 -0.04 -0.02
Drain Current,
-6.0
-0.07 -0.06 -0.05 -0.04 -0.03 -0.02 -0.01 -0.2
VGS= -1.5V
-0.4 -0.6
-0.8
-1.0
-1.2
-1.4
-1.6
-1.8
-2.0
-0.5
-1.0
-1.5
-2.0
-2.5 -3.0
-2.0V
25°C
-3.5
-4.0
Drain-to-Source Voltage,
IT00077
Gate-to-Source Voltage,
IT00078
No.6139-2/4
3LP01M
RDS(on)
Ta=25°C
RDS(on)
VGS=
Static Drain-to-Source On-State Resistance, RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
-0.01
Ta=75°C -25°C
25°C
-50mA
-30mA
-0.1
Gate-to-Source Voltage,
IT00079 1000
Drain Current,
IT00080
RDS(on)
VGS= -2.5V
RDS(on)
VGS= -1.5V
Static Drain-to-Source On-State Resistance, RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
Ta=75°C
25°C
-25°C
25°C Ta=75°C -25°C
-1.0
-0.01
-0.1
-0.1
Drain Current,
IT00081
RDS(on)
Drain Current,
IT00082
Forward Transfer Admittance,
VDS= -10V
Static Drain-to-Source On-State Resistance, RDS(on)
25°C
-5°C
75°C
0.01 -0.01
-0.1
Ambient Temperature,
IT00083 1000
VGS=0V
Drain Current,
IT00084
Time
Switching Time, Time
VDD= -15V VGS=
Source Current,
-0.1
td(off)
td(on)
25°C
-0.01 -0.5
Ta=7
-25°C
-0.6
-0.7
-0.8
-0.9
-1.0
-1.1 IT00085
-0.01
Diode Forward Voltage,
Drain Current,
-0.1 IT00086
No.6139-3/4
3LP01M
Ciss, Coss, Crss
f=1MHz
VDS= -10V -0.1A
Gate-to-Sourse Voltage,
IT00087
Ciss, Coss, Crss
Ciss Coss
Crss
Drain-to-Source Voltage,
0.20
Total Gate Charge,
IT00088
Allowable Power Dissipation,
0.15
0.10
0.05
Ambient Temperature,
IT02381
Note usage Since 3LP01M MOSFET product, please avoid using this device vicinity highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor Co.,Ltd. products described contained herein. SANYO Semiconductor Co.,Ltd. strives supply high-quality high-reliability products, however, semiconductor products fail malfunction with some probability. possible that these probabilistic failures malfunction could give rise accidents events that could endanger human lives, trouble that could give rise smoke fire, accidents that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor Co.,Ltd. products described contained herein controlled under applicable local export control laws regulations, such products require export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written consent SANYO Semiconductor Co.,Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor Co.,Ltd. product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. Upon using technical information products described herein, neither warranty license shall granted with regard intellectual property rights other rights SANYO Semiconductor Co.,Ltd. third party. SANYO Semiconductor Co.,Ltd. shall liable claim suits with regard third party's intellectual property rights which resulted from technical information products mentioned above.
This catalog provides information April, 2008. Specifications information herein subject change without notice.
No.6139-4/4

3LP01M P-Channel Silicon MOSFET 3LP01M Features Ge

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