5LN01M 5LN01M Features N-Channel Silicon MOSFET Ge

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5LN01M 5LN01M Features N-Channel Silicon MOSFET Ge

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Ordering number EN6137A
5LN01M
5LN01M
Features
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
ON-resistance. Ultrahigh-speed switching. 2.5V drive.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS Tstg PW10µs, duty cycle1% Conditions Ratings 0.15 +150 Unit
Electrical Characteristics Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss Conditions ID=1mA, VGS=0V VDS=50V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=100µA VDS=10V, ID=50mA ID=50mA, VGS=4V ID=30mA, VGS=2.5V ID=10mA, VGS=1.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz Ratings 0.13 0.18 Unit
Marking
Continued next page.
SANYO Semiconductor products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest before usingany SANYO Semiconductor products described contained herein such applications. SANYO Semiconductor assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor products described contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72606 31506PE TB-00002111 31000 (KOTO) TA-2048 No.6137-1/4
5LN01M
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) td(off) Conditions specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=10V, VGS=10V, ID=100mA VDS=10V, VGS=10V, ID=100mA VDS=10V, VGS=10V, ID=100mA IS=100mA, VGS=0V Ratings 1.57 0.20 0.32 0.85 Unit
Package Dimensions
unit 7023-010
0.425
Switching Time Test Circuit
VDD=25V ID=50mA RL=500 VOUT
0.15
PW=10µs D.C.1%
1.25
5LN01M
0.425
0.65 0.65
Gate Source Drain SANYO
0.10 0.09 0.08
0.20
VDS=10V
3.5V 4.0V
Drain Current,
0.07 0.06 0.05 0.04 0.03 0.02 0.01 IT00054
Drain Current,
0.14 0.12 0.10 0.08 0.06 0.04 0.02
VGS=1.5V
Ta=-2
0.16
0.18
IT00055
Drain-to-Source Voltage,
RDS(on)
Gate-to-Source Voltage,
RDS(on)
Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on)
VGS=4V
Static Drain-to-Source On-State Resistance, RDS(on)
50mA ID=30mA
Ta=75°C 25°C -25°C
0.01
Gate-to-Source Voltage,
IT00056
Drain Current,
IT00057
No.6137-2/4
5LN01M
RDS(on)
VGS=2.5V
Static Drain-to-Source On-State Resistance, RDS(on)
RDS(on)
VGS=1.5V
Static Drain-to-Source On-State Resistance, RDS(on)
Ta=75°C
Ta=75°C 25°C
25°C -25°C
-25°C
0.01
Drain Current,
IT00058
0.001
0.01
RDS(on)
Drain Current,
IT00059
Forward Transfer Admittance,
VDS=10V
Static Drain-to-Source On-State Resistance, RDS(on)
Ta=-
25°C
75°C
0.01 0.01
Ambient Temperature,
IT00060 1000
VGS=0V
Switching Time, Time
Drain Current,
IT00061
Time
VDD=25V VGS=4V
Source Current,
td(off)
0.01
0.01
td(on)
IT00062
Diode Forward Voltage,
Ciss, Coss, Crss
f=1MHz
Gate-to-Source Voltage,
Drain Current,
IT00063
VDS=10V ID=100mA
Ciss, Coss, Crss
Ciss Coss
Crss
Drain-to-Source Voltage,
IT00064
Total Gate Charge,
IT00065
No.6137-3/4
5LN01M
0.20
Allowable Power Dissipation,
0.15
0.10
0.05
Ambient Temperature,
IT00066
Note usage Since 5LN01M MOSFET product, please avoid using this device vicinity highly charged objects.
Specifications SANYO Semiconductor products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Semiconductor Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor products (including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must exported without obtaining export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Semiconductor Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO Semiconductor believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information March, 2006. Specifications information herein subject change without notice.
No.6137-4/4

5LN01M 5LN01M Features N-Channel Silicon MOSFET Ge

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