5HN01M 5HN01M Features N-Channel Silicon MOSFET Ge

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5HN01M 5HN01M Features N-Channel Silicon MOSFET Ge

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Ordering number EN6136A
5HN01M
5HN01M
Features
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
ON-resistance. Ultrahigh-speed switching. drive.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS Tstg PW10µs, duty cycle1% Conditions Ratings 0.15 +150 Unit
Electrical Characteristics Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=1mA, VGS=0V VDS=50V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=100µA VDS=10V, ID=50mA ID=50mA, VGS=10V ID=30mA, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz Ratings 10.5 Unit
Marking
Continued next page.
SANYO Semiconductor products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest before usingany SANYO Semiconductor products described contained herein such applications. SANYO Semiconductor assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor products described contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72606 31506PE TB-00002110 90100 TA-2044 No.6136-1/4
5HN01M
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) td(off) Conditions specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=10V, VGS=10V, ID=100mA VDS=10V, VGS=10V, ID=100mA VDS=10V, VGS=10V, ID=100mA IS=100mA, VGS=0V Ratings 1.40 0.21 0.34 0.85 Unit
Package Dimensions
unit 7023-010
0.425
Switching Time Test Circuit
VDD=25V ID=50mA RL=500
0.15
PW=10µs D.C.1%
VOUT
1.25
5HN01M
0.425
0.65 0.65
Gate Source Drain SANYO
0.10
0.20 0.18
VDS=10V
25°C
0.08
0.16
Drain Current,
Drain Current,
0.14 0.12 0.10 0.08 0.06 0.04
0.06
0.04
2.5V
0.02
VGS=2.0V
IT00042
0.02 IT00043
Drain-to-Source Voltage,
RDS(on)
Gate-to-Source Voltage,
RDS(on)
75°C
VGS=10V
Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
50mA
ID=30mA
Ta=75°C 25°C -25°C
0.01
IT00045
Gate-to-Source Voltage,
IT00044
Drain Current,
No.6136-2/4
5HN01M
RDS(on)
VGS=4V
RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
Ta=75°C 25°C -25°C
0.01
Drain Current,
IT00046
Ambient Temperature,
IT00047
VGS=0V
Forward Transfer Admittance,
VDS=10V
Source Current,
-25°
75°C
25°C
0.01 0.01
0.01
-25°C
25°C
Drain Current,
1000
IT00048
Time
Diode Forward Voltage,
IT00049
Ciss, Coss, Crss
f=1MHz
VDD=25V VGS=10V td(off) td(on)
Switching Time, Time
0.01
Ciss, Coss, Crss
Ciss Coss
Crss
Drain Current,
IT00050 0.20
Drain-to-Source Voltage,
IT00051
IT00052
Allowable Power Dissipation,
Gate-to-Source Voltage,
VDS=10V ID=0.1A
0.15
0.10
0.05
Total Gate Charge,
Ambient Temperature,
IT02381
No.6136-3/4
5HN01M
Note usage Since 5HN01M MOSFET product, please avoid using this device vicinity highly charged objects.
Specifications SANYO Semiconductor products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Semiconductor Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor products (including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must exported without obtaining export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Semiconductor Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO Semiconductor believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information March, 2006. Specifications information herein subject change without notice.
No.6136-4/4

5HN01M 5HN01M Features N-Channel Silicon MOSFET Ge

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