5LP01M 5LP01M Features P-Channel Silicon MOSFET Ge

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5LP01M 5LP01M Features P-Channel Silicon MOSFET Ge

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Ordering number EN6135A
5LP01M
5LP01M
Features
P-Channel Silicon MOSFET
General-Purpose Switching Device Applications
ON-resistance. Ultrahigh-speed switching. 2.5V drive.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS Tstg PW10µs, duty cycle1% Conditions Ratings -0.07 -0.28 0.15 +150 Unit
Electrical Characteristics Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss Conditions ID=-1mA, VGS=0V VDS=-50V, VGS=0V VGS=±8V, VDS=0V VDS=-10V, ID=-100µA VDS=-10V, ID=-40mA ID=-40mA, VGS=-4V ID=-20mA, VGS=-2.5V ID=-5mA, VGS=-1.5V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz Ratings -0.4 -1.4 Unit
Marking
Continued next page.
SANYO Semiconductor products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest before usingany SANYO Semiconductor products described contained herein such applications. SANYO Semiconductor assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor products described contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71206 42006PE TB-00002113 31000 (KOTO) TA-2040 No.6135-1/4
5LP01M
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Diode Forward Voltage Symbol td(on) td(off) Conditions specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=-10V, VGS=-10V, ID=-70mA VDS=-10V, VGS=-10V, ID=-70mA VDS=-10V, VGS=-10V, ID=-70mA IS=-70mA, VGS=0V Ratings 1.40 0.16 0.23 -0.85 -1.2 Unit
Package Dimensions
unit 7023-010
0.425 0.15
Switching Time Test Circuit
VDD= -25V -40mA RL=625 VOUT
1.25
PW=10µs D.C.1%
0.425
0.65 0.65
5LP01M
Gate Source Drain SANYO
-0.07
-0.14
-25°C
VDS= -10V
-0.06
-0.12
Drain Current,
-0.05
Drain Current,
-0.10
-0.04
-0.08
-0.03
-0.06
-0.02
VGS= -1.5V
-0.04
-0.01 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0
-0.02 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0
Drain-to-Source Voltage,
IT00090
RDS(on)
Gate-to-Source Voltage,
25°C
IT00091
RDS(on)
Ta=25°C
VGS=
Static Drain-to-Source On-State Resistance, RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
Ta=75°C
-20mA
-40mA
25°C -25°C
-0.01
-0.1
Gate-to-Source Voltage,
IT00092
Drain Current,
IT00093
No.6135-2/4
5LP01M
RDS(on)
VGS= -2.5V
RDS(on)
VGS= -1.5V
Static Drain-to-Source On-State Resistance, RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
Ta=75°C
Ta=75°C 25°C -25°C
25°C -25°C
-0.01
-0.1
-0.001
-0.01
Drain Current,
IT00094
Drain Current,
RDS(on)
IT00095
Forward Transfer Admittance,
VDS= -10V
Static Drain-to-Source On-State Resistance, RDS(on)
25°C
75°C
Ambient Temperature,
0.01 -0.01
-0.1
IT00096 1000
VGS=0V
Drain Current,
IT00097
Time
Switching Time, Time
VDD= -25V td(off)
Source Current,
-0.1
-0.01
td(on)
Ta=7
-0.01 -0.5
-25°C
-0.6
-0.7
-0.8
-0.9
-1.0
-1.1
-1.2 IT00098
-0.1 IT00099
Diode Forward Voltage,
Ciss, Coss, Crss
f=1MHz
Drain Current,
Gate-to-Source Voltage,
VDS= -10V -70mA
Ciss, Coss, Crss
Ciss Coss
Crss
Drain-to-Source Voltage,
IT00100
Total Gate Charge,
IT00101
No.6135-3/4
5LP01M
0.20
Allowable Power Dissipation,
0.15
0.10
0.05
Ambient Temperature,
IT00102
Note usage Since 5LP01M MOSFET product, please avoid using this device vicinity highly charged objects.
Specifications SANYO Semiconductor products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Semiconductor Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor products (including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must exported without obtaining export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Semiconductor Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO Semiconductor believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information April, 2006. Specifications information herein subject change without notice.
No.6135-4/4

5LP01M 5LP01M Features P-Channel Silicon MOSFET Ge

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