3LP02M P-Channel Silicon MOSFET 3LP02M Features Ge

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3LP02M P-Channel Silicon MOSFET 3LP02M Features Ge

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Ordering number EN6127A
3LP02M
P-Channel Silicon MOSFET
3LP02M
Features
General-Purpose Switching Device Applications
ON-resistance. High-speed switching. 2.5V drive.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS Tstg PW10µs, duty cycle1% Conditions Ratings -0.2 -0.8 0.15 +150 Unit
Electrical Characteristics Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Sourse Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) td(off) Conditions ID=-1mA, VGS=0V VDS=-30V, VGS=0V VGS=±8V, VDS=0V VDS=-10V, ID=-100µA VDS=-10V, ID=-100mA ID=-100mA, VGS=-4V ID=-50mA, VGS=-2.5V ID=-10mA, VGS=-1.5V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. Ratings -0.4 0.21 -1.4 Unit
Marking
Continued next page.
SANYO Semiconductor products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest before using SANYO Semiconductor products described contained herein such applications. SANYO Semiconductor assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor products described contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72606 32406PE TB-00002151 52899 TA-1852 No.6127-1/4
3LP02M
Continued from preceding page.
Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Conditions VDS=-10V, VGS=-10V, ID=-200mA VDS=-10V, VGS=-10V, ID=-200mA VDS=-10V, VGS=-10V, ID=-200mA IS=-200mA, VGS=0V Ratings 0.25 0.35 -0.82 -1.2 Unit
Package Dimensions
unit 7023-010
0.425
Switching Time Test Circuit
0.15
VDD= -15V -100mA RL=150 VOUT
1.25
PW=10µs D.C.1%
0.425
0.65 0.65
3LP02M
Gate Source Drain SANYO
-0.20 -0.18 -0.16
-0.40 -0.35
VDS= -10V
25°C -0.5 -1.0 -1.5 -2.0
Drain Current,
-0.12 -0.10 -0.08 -0.06 -0.04 -0.02 -0.1 -0.2 -0.3 -0.4
-0.25 -0.20 -0.15 -0.10 -0.05
VGS= -1.5V
-2.5
-0.14
Drain Current,
-3.5V
-0.30
25°C
-3.0
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
-3.5 IT00238
Drain-to-Source Voltage,
IT00237
RDS(on)
Gate-to-Source Voltage,
RDS(on)
Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on)
VGS=
Static Drain-to-Source On-State Resistance, RDS(on)
-100mA
-50mA
Ta=75°C 25°C
-25°C
-0.01
-0.1
Gate-to-Source Voltage,
IT00239
Drain Current,
-1.0 IT00240
No.6127-2/4
3LP02M
RDS(on)
VGS= -2.5V
RDS(on)
VGS= -1.5V
Static Drain-to-Source On-State Resistance, RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
Ta=75°C 25°C -25°C
Ta=75°C
25°C
-25°C
-0.01
-0.1
Drain Current,
-1.0 IT00241
-0.001
-0.01
RDS(on)
Drain Current,
-0.1 IT00242
Static Drain-to-Source On-State Resistance, RDS(on)
Forward Transfer Admittance,
VDS= -10V
75°C
0.01 -0.01
-0.1
Ambient Temperature,
-1.0
IT00243 1000
VGS=0V
Drain Current,
-1.0 IT00244
Time
VDD= -15V VGS=
Source Current,
Switching Time, Time
td(off) td(on)
-0.1
25°C
-0.01 -0.4
-25°
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0 IT00245
-0.01
-0.1
Diode Forward Voltage,
Ciss, Coss, Crss
f=1MHz
Drain Current,
IT00246
Gate-to-Sourse Voltage,
VDS= -10V -200mA
Ciss, Coss, Crss
Ciss Coss
IT00247
Crss
IT00248
Drain-to-Source Voltage,
Total Gate Charge,
No.6127-3/4
3LP02M
0.20
Allowable Power Dissipation,
0.15
0.10
0.05
Ambient Temperature,
IT00249
Note usage Since 3LP02M MOSFET product, please avoid using this device vicinity highly charged objects.
Specifications SANYO Semiconductor products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Semiconductor Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor products (including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must exported without obtaining export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Semiconductor Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO Semiconductor believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information March, 2006. Specifications information herein subject change without notice.
No.6127-4/4

3LP02M P-Channel Silicon MOSFET 3LP02M Features Ge

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