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2SC5347 Epitaxial Planar Silicon Transistor 2SC5347 Fea


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Ordering number EN5512C
2SC5347
Epitaxial Planar Silicon Transistor
2SC5347
Features
High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifier Applications
High-frequency medium output amplification (VCE=5V, IC=50mA) fT=4.7GHz (f=1GHz). :S21e2=8dB (f=1GHz). NF=1.8dB (f=1GHz).
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Tstg Mounted ceramic board (900mm20.8mm) Conditions Ratings +150 Unit
Electrical Characteristics Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO
S21e
Conditions VCB=10V, IE=0A VEB=1V, IC=0A VCE=5V, IC=50mA VCE=5V, IC=50mA VCB=10V, f=1MHz VCB=10V, f=1MHz VCE=5V, IC=50mA, f=1GHz VCE=5V, IC=50mA, f=1GHz
Ratings 270*
Unit
Marking 2SC5347 classified 50mA follows Rank
SANYO Semiconductor products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest before usingany SANYO Semiconductor products described contained herein such applications. SANYO Semiconductor assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor products described contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83006 TC-00000117 /72006AB TC-00000075 21599 (KT) 91296 (KOTO) TA-0689 No.5512-1/6
2SC5347
Package Dimensions unit (typ) 7007A-004
View
0.75
Base Collector Emitter
Bottom View
SANYO
VCE=5V
VCE=5V
Gain-Bandwidth Product,
Current Gain,
Collector Current,
ITR08157
f=1MHz
Collector Current,
ITR08158
f=1MHz
Reverse Transfer Capacitance,
Output Capacitance,
Collector-to-Base Voltage,
ITR08159
Collector-to-Base Voltage,
ITR08160
No.5512-2/6
2SC5347
S21e2
VCE=5V f=1GHz
VCE=5V f=1GHz
Forward Transfer Gain, S21e2
Noise Figure,
Collector Current,
ITR08161
Collector Current,
ITR08162
Collector Dissipation,
Ambient Temperature,
ITR08163
No.5512-3/6
2SC5347
Parameter
S11e f=100MHz 1200MHz(100MHz Step) S21e f=100MHz 1200MHz(100MHz Step)
VCE=5V IC=50mA
0.1GHz
VCE=8V IC=70mA
j100
VCE=5V IC=50mA
120°
VCE=5V IC=20mA
j150 j200 j250
150°
1.2GHz
1.2GHz
±180°
-j10
VCE=5V IC=20mA
VCE=8V IC=70mA
0.1GHz
-j250 -j200 -j150 -j100
-150°
-30°
-j25 -j50 S12e f=100MHz 1200MHz(100MHz Step)
-120°
ITR08164
-60° -90°
ITR08165
S22e f=100MHz 1200MHz(100MHz Step)
VCE=5V IC=50mA
120°
VCE=8V IC=70mA
1.2GHz
VCE=5V IC=20mA
j100 j150 j200 j250
150°
0.1GHz
±180°
0.04 0.08 0.12 0.16
VCE=5V IC=50mA 1.2GHz
VCE=8V IC=70mA
-j10 -150° -30°
0.1GHz IC=20mA
-j250 -j200 -j150
-120° -90°
-60°
ITR08166
-j25 -j50
-j100
ITR08167
No.5512-4/6
2SC5347
Parameters (Common emitter)
VCE=5V, IC=50mA, ZO=50 Freq(MHz) 1000 1100 1200 0.358 0.354 0.355 0.359 0.359 0.362 0.366 0.364 0.368 0.370 0.373 0.377 -141.0 -165.7 -176.8 174.9 169.3 163.9 158.5 153.5 149.8 145.3 141.5 137.6 24.005 12.593 8.532 6.428 5.293 4.360 3.774 3.334 2.995 2.725 2.494 2.307 105.9 93.3 86.8 81.9 77.6 73.5 69.9 66.4 62.9 59.4 56.5 53.0 0.027 0.047 0.068 0.089 0.110 0.130 0.151 0.171 0.191 0.210 0.230 0.248 68.4 72.7 74.1 73.7 72.8 71.7 70.2 68.6 66.7 65.1 63.0 61.4 0.342 0.205 0.166 0.149 0.145 0.143 0.147 0.151 0.158 0.166 0.170 0.177 -63.0 -68.4 -69.7 -72.3 -75.3 -78.6 -82.1 -85.6 -90.1 -92.3 -95.1 -97.8
VCE=5V, IC=20mA, ZO=50 Freq(MHz) 1000 1100 1200 0.445 0.400 0.394 0.391 0.391 0.392 0.393 0.394 0.396 0.399 0.403 0.408 -115.4 -149.6 -165.7 -176.5 176.7 169.4 163.8 158.4 154.1 149.3 144.9 141.0 21.095 11.567 7.917 5.974 4.845 4.065 3.522 3.114 2.798 2.548 2.333 2.158 113.8 97.4 89.3 82.5 78.4 73.9 70.0 66.4 62.5 58.9 55.5 51.8 0.032 0.049 0.066 0.085 0.103 0.122 0.141 0.159 0.178 0.196 0.215 0.233 59.7 63.4 67.0 68.5 68.8 68.6 67.8 67.1 65.7 64.5 62.9 61.8 0.479 0.300 0.242 0.214 0.203 0.199 0.198 0.201 0.204 0.212 0.218 0.224 -52.4 -58.0 -58.8 -60.0 -62.2 -64.7 -67.9 -71.2 -74.7 -78.1 -81.4 -84.1
VCE=8V, IC=70mA, ZO=50 Freq(MHz) 1000 1100 1200 0.328 0.323 0.323 0.326 0.325 0.328 0.330 0.333 0.335 0.341 0.345 0.348 -141.2 -165.7 -176.6 175.1 169.5 163.6 158.4 153.5 150.0 144.7 141.2 138.0 25.505 13.334 9.025 6.819 5.481 4.612 3.980 3.524 3.148 2.866 2.629 2.424 105.1 93.0 86.7 81.8 77.8 73.7 70.2 66.7 63.3 60.0 57.0 53.4 0.024 0.043 0.062 0.081 0.100 0.119 0.139 0.157 0.177 0.194 0.213 0.230 70.5 75.0 75.8 75.5 74.5 73.4 71.8 70.4 68.5 67.1 65.1 62.6 0.348 0.233 0.204 0.191 0.187 0.185 0.188 0.191 0.198 0.204 0.208 0.215 -50.8 -48.9 -47.0 -48.0 -50.5 -53.6 -57.3 -60.9 -65.1 -69.0 -72.1 -75.3
No.5512-5/6
2SC5347
Specifications SANYO Semiconductor products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Semiconductor Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor products (including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must exported without obtaining export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Semiconductor Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO Semiconductor believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information August, 2006. Specifications information herein subject change without notice.
No.5512-6/6

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