2SK2617LS N-Channel Silicon MOSFET 2SK2617LS Features

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2SK2617LS N-Channel Silicon MOSFET 2SK2617LS Features

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Ordering number EN5443C
2SK2617LS
N-Channel Silicon MOSFET
2SK2617LS
Features
General-Purpose Switching Device Applications
ON-resistance. Ultrahigh-speed switching.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) Avalanche Current Symbol VDSS VGSS Tstg PW10µs, duty cycle1% Tc=25°C Conditions Ratings +150 Unit
VDD=50V, L=10mH, IAV=4A L10mH, single pulse
Electrical Characteristics Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) Conditions ID=1mA, VGS=0V VDS=500V, VGS=0V VGS=±30V, VDS=0V VDS=10V, ID=1mA Ratings ±100 Unit
Marking K2617
Continued next page.
SANYO Semiconductor Co.,Ltd. products described contained herein are, with regard "standard application", intended general electronics equipment (home appliances, equipment, communication device, office equipment, industrial equipment etc.). products mentioned herein shall intended "special application" (medical equipment whose purpose sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level reliability directly threaten human lives case failure malfunction product cause harm human bodies, shall they grant guarantee thereof. should intend products applications outside standard applications customer considering such and/or outside scope intended standard applications, please consult with prior intended use. there consultation inquiry before intended use, customer shall solely responsible use. Specifications SANYO Semiconductor Co.,Ltd. products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer' products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer' products equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O3107 TC-00000987 22006QB 22004 TA-100437 No.5443-1/4
2SK2617LS
Continued from preceding page.
Parameter Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Symbol RDS(on) Ciss Coss Crss td(on) td(off) Conditions VDS=10V, ID=2A ID=2A, VGS=15V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=200V, ID=4A, VGS=10V specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. IS=4A, VGS=0V Ratings 0.95 Unit
Package Dimensions
unit (typ) 7509-002
Switching Time Test Circuit
VDD=200V
10.0
VGS=15V
16.0
ID=2A RL=100 VOUT
PW=1µs D.C.0.5%
16.1
0.75
2SK2617LS
14.0
Gate Drain Source SANYO TO-220FI(LS)
2.55
2.55
Avalanche Resistance Test Circuit
2SK2617LS
No.5443-2/4
2SK2617LS
Tc=25°C
VDS=10V
-25°C
Drain Current,
Drain Current,
25°C
75°C
VGS=6V
IT05191
IT05192
Drain-to-Source Voltage,
RDS(on)
Drain-to-Source Voltage,
RDS(on)
Tc=25°C
Static-Drain-to-Source On-State Resistance, RDS(on)
Static-Drain-to-Source On-State Resistance, RDS(on)
IT05194
ID=4A
Gate-to-Source Voltage,
IT05193
Case Temperature,
VGS=0V
Forward Transfer Admittance,
VDS=10V
Source Current,
0.01 0.001
Drain Current,
IT05195
IT05196
Time
Diode Forward Voltage,
VDD=200V VGS=15V
IDP=16A ID=4A
Switching Time, Time
<1µs
Drain Current,
(off)
Operation this area limited RDS(on).
td(on)
IT05197
0.01
Tc=25°C Single pulse
Drain Current,
Drain-to-Source Voltage,
IT05198
No.5443-3/4
2SK2617LS
Allowable Power Dissipation,
Allowable Power Dissipation,
Ambient Temperature,
IT05199
Case Temperature,
IT05120
Avalanche Energy derating factor
IT10478
Ambient Temperature,
Note usage Since 2SK2617LS MOSFET product, please avoid using this device vicinity highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor Co.,Ltd. products described contained herein. SANYO Semiconductor Co.,Ltd. strives supply high-quality high-reliability products, however, semiconductor products fail malfunction with some probability. possible that these probabilistic failures malfunction could give rise accidents events that could endanger human lives, trouble that could give rise smoke fire, accidents that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor Co.,Ltd. products described contained herein controlled under applicable local export control laws regulations, such products require export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written consent SANYO Semiconductor Co.,Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor Co.,Ltd. product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. Upon using technical information products described herein, neither warranty license shall granted with regard intellectual property rights other rights SANYO Semiconductor Co.,Ltd. third party. SANYO Semiconductor Co.,Ltd. shall liable claim suits with regard third party's intellectual property rights which resulted from technical information products mentioned above.
This catalog provides information October, 2007. Specifications information herein subject change without notice.
No.5443-4/4

2SK2617LS N-Channel Silicon MOSFET 2SK2617LS Features

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