2SK2624LS N-Channel Silicon MOSFET 2SK2624LS Features

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2SK2624LS N-Channel Silicon MOSFET 2SK2624LS Features

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Ordering number EN5404C
2SK2624LS
N-Channel Silicon MOSFET
2SK2624LS
Features
General-Purpose Switching Device Applications
ON-resistance. Ultrahigh-speed switching.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) Avalanche Current Symbol VDSS VGSS Tstg PW10µs, duty cycle1% Tc=25°C Conditions Ratings +150 Unit
VDD=50V, L=10mH, IAV=3A L10mH, single pulse
Electrical Characteristics Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) Conditions ID=1mA, VGS=0V VDS=600V, VGS=0V VGS=±30V, VDS=0V VDS=10V, ID=1mA Ratings ±100 Unit
Marking K2624
Continued next page.
SANYO Semiconductor Co.,Ltd. products described contained herein are, with regard "standard application", intended general electronics equipment (home appliances, equipment, communication device, office equipment, industrial equipment etc.). products mentioned herein shall intended "special application" (medical equipment whose purpose sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level reliability directly threaten human lives case failure malfunction product cause harm human bodies, shall they grant guarantee thereof. should intend products applications outside standard applications customer considering such and/or outside scope intended standard applications, please consult with prior intended use. there consultation inquiry before intended use, customer shall solely responsible use. Specifications SANYO Semiconductor Co.,Ltd. products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer' products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer' products equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O3107QB TC-00000989 N2000TS(KOTO)TA-2884 No.5404-1/5
2SK2624LS
Continued from preceding page.
Parameter Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Symbol RDS(on) Ciss Coss Crss td(on) td(off) Conditions VDS=10V, ID=1.8A ID=1.8A, VGS=15V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=200V, ID=3A, VGS=10V specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. IS=3A, VGS=0V Ratings 0.98 Unit
Package Dimensions
unit (typ) 7509-002
Switching Time Test Circuit
VDD=200V
10.0
VGS=15V PW=1µs D.C.0.5% ID=1.8A RL=111 VOUT
16.1
16.0
0.75
2SK2624LS
14.0
Gate Drain Source SANYO TO-220FI(LS)
2.55
2.55
Avalanche Resistance Test Circuit
2SK2624LS
No.5404-2/5
2SK2624LS
VDS=10V -25°C
Drain Current,
Drain Current,
25°C
75°C
VGS=6V
Drain-to-Source Voltage,
IT01020
Gate-to-Source Voltage,
IT01021
RDS(on)
Tc=25°C
RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
ID=3.0A 1.8A
1.0A
Gate-to-Source Voltage,
IT01022
Case Temperature,
IT01023
VGS(off)
VDS=10V ID=1mA
Forward Transfer Admittance,
VDS=10V
Cutoff Voltage, VGS(off)
-25°C 25°C
75°C
Drain Current,
IT01024
Case Temperature,
IT01025
Time
td(off)
VDD=200V VGS=15V
VGS=0V
Source Current,
Switching Time, Time
td(on)
0.01 0.001
IT01026 IT01027
Diode Forward Voltage,
Drain Current,
No.5404-3/5
2SK2624LS
1000
Ciss, Coss, Crss
Ciss f=1MHz
Forward Bias
IDP=12A ID=3A
Ciss, Coss, Crss
Drain Current,
Coss Crss
Operation this area limited RDS(on). Tc=25°C Single Pulse
IT01028
0.01
Drain-to-Source Voltage,
Drain-to-Source Voltage,
1000 IT01029
Allowable Power Dissipation,
Allowable Power Dissipation,
Ambient Temperature,
IT01031
Case Temperature,
IT01030
Avalanche Energy derating factor
IT10478
Ambient Temperature,
No.5404-4/5
2SK2624LS
Note usage Since 2SK2624LS MOSFET product, please avoid using this device vicinity highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor Co.,Ltd. products described contained herein. SANYO Semiconductor Co.,Ltd. strives supply high-quality high-reliability products, however, semiconductor products fail malfunction with some probability. possible that these probabilistic failures malfunction could give rise accidents events that could endanger human lives, trouble that could give rise smoke fire, accidents that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor Co.,Ltd. products described contained herein controlled under applicable local export control laws regulations, such products require export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written consent SANYO Semiconductor Co.,Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor Co.,Ltd. product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. Upon using technical information products described herein, neither warranty license shall granted with regard intellectual property rights other rights SANYO Semiconductor Co.,Ltd. third party. SANYO Semiconductor Co.,Ltd. shall liable claim suits with regard third party's intellectual property rights which resulted from technical information products mentioned above.
This catalog provides information October, 2007. Specifications information herein subject change without notice.
No.5404-5/5

2SK2624LS N-Channel Silicon MOSFET 2SK2624LS Features

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