2SD826 2SD826 Features Epitaxial Planar Silicon Transis

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2SD826 2SD826 Features Epitaxial Planar Silicon Transis

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Ordering number EN538F
2SD826
2SD826
Features
Epitaxial Planar Silicon Transistor
Transistor Flash Circuit
saturation voltage. High hFE. Large current capacity.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Tstg 100ms, pulse Tc=25°C Conditions Ratings +150 Unit
Electrical Characteristics Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current Current Gain Symbol ICBO IEBO hFE1 hFE2 VCB=50V, IE=0A VEB=5V, IC=0A VCE=2V, IC=0.5A VCE=2V, IC=3A (Pulse) 120* Conditions Ratings 560* Unit
Continued next page. 2SD826 classified 0.5A follows Rank
SANYO Semiconductor Co.,Ltd. products described contained herein are, with regard "standard application", intended general electronics equipment (home appliances, equipment, communication device, office equipment, industrial equipment etc.). products mentioned herein shall intended "special application" (medical equipment whose purpose sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level reliability directly threaten human lives case failure malfunction product cause harm human bodies, shall they grant guarantee thereof. should intend products applications outside standard applications customer considering such and/or outside scope intended standard applications, please consult with prior intended use. there consultation inquiry before intended use, customer shall solely responsible use. Specifications SANYO Semiconductor Co.,Ltd. products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer' products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer' products equipment.
60309EA TC-00001960 31005TN (PC)/21599TH (KT)/5277KI/3115KI/5244KI, No.538-1/6
2SD826
Continued from preceding page.
Parameter Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Turn-ON Time Fall Time Storage Time Symbol VCE(sat) VBE(sat) tstg Conditions VCE=10V, IC=50mA VCB=10V, f=1MHz IC=3A, IB=60mA (Pulse) IC=3A, IB=60mA (Pulse) specified Test Circuit. specified Test Circuit. specified Test Circuit. Ratings Unit
Package Dimensions
unit (typ) 7515-002
Switching Time Test Circuit
OUTPUT VBE= VCC=10V
PW=10s D.C.=2% INPUT
11.0
IC=10IB1= -10IB2=2A
15.5
Emitter Collector Base SANYO TO-126
30mA
Collector Current,
40mA
30mA
20mA
Collector Current,
20mA
15mA 10mA
15mA
10mA
IB=0mA
ITR09923
IB=0mA
ITR09924
Collector-to-Emitter Voltage,
Collector-to-Emitter Voltage,
No.538-2/6
2SD826
VCE=2V (Pulse)
1000
VCE=2V (Pulse)
Collector Current,
Current Gain,
ITR09925
1000
Base-to-Emitter Voltage,
1000
VCE=10V (Pulse)
Collector Current,
ITR09926
f=1MHz
Gain-Bandwidth Product,
Output Capacitance,
Collector Current,
1000 ITR09927
VCE(sat)
Collector-to-Base Voltage,
ITR09928
ICP=8A IC=5A
IB=50 (Pulse)
Collector-to-Emitter Saturation Voltage, VCE(sat)
lse)
Collector Current,
Collector Current,
ITR09929
Collector-to-Emitter Voltage,
ITR09931
Collector Dissipation,
heat sink
ITR09930
Ambient Temperature,
No.538-3/6
2SD826
Sample Application Circuit Electronic flash
Supply circuit
ITR09932
E[V] NiCd2 Alkali manganese NiCd4 0.15
MC[F] C1[F] 1200
R[k]
C2[F] 0.01 0.015 0.0068
2SD826 2SD826 2SD826
0.55 3/4T 3/4T 3/4T
0.23 3/4T 0.23 3/4T 0.23 3/4T
0.07 1350T 0.08 1390T 0.08 1390T
Core EE13 EE16 EE16
tC(1)
Main Capacitor Voltage,
tC(2)
Main Capacitor Voltage,
2SD8262 NiCd battery4
ITR09933
2SD8261 Manganese alkali battery4
ITR09934
Charge Time,
tC(3)
Charge Time,
Main Capacitor Voltage,
2SD8261 NiCd battery2
ITR09935
Charge Time,
No.538-4/6
2SD826
Sample Application Circuit High-grade electronic flash
EE16 DFC05R
100F Nicd BATTER
1200F 440V SCR1
0.1F 400V
LAMP
BYPASS TUBU 0.047F 400V
SCR2
PHOTO
0.0068F 2SD8262
PULSE TRANS SCR1 DRA03E
PULSE TRANS SCR2 INTER FACE DRA03E
CONVERTER TRANS 3/4T 0.23 3/4T 0.08 1390T CORE EE16
ITR09936
tC(1)
Main Capacitor Voltage,
2SD8262 NiCd battery4
ITR09937
Charge Time,
No.538-5/6
2SD826
SANYO Semiconductor Co.,Ltd. assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor Co.,Ltd. products described contained herein. SANYO Semiconductor Co.,Ltd. strives supply high-quality high-reliability products, however, semiconductor products fail malfunction with some probability. possible that these probabilistic failures malfunction could give rise accidents events that could endanger human lives, trouble that could give rise smoke fire, accidents that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor Co.,Ltd. products described contained herein controlled under applicable local export control laws regulations, such products require export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written consent SANYO Semiconductor Co.,Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor Co.,Ltd. product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. Upon using technical information products described herein, neither warranty license shall granted with regard intellectual property rights other rights SANYO Semiconductor Co.,Ltd. third party. SANYO Semiconductor Co.,Ltd. shall liable claim suits with regard third party's intellectual property rights which resulted from technical information products mentioned above.
This catalog provides information June, 2009. Specifications information herein subject change without notice.
No.538-6/6

2SD826 2SD826 Features Epitaxial Planar Silicon Transis

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