2SK2142 N-Channel Silicon MOSFET 2SK2142 Features
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Ordering number EN5369A
2SK2142
N-Channel Silicon MOSFET
2SK2142
Features
General-Purpose Switching Device Applications
ON-resistance. Ultrahigh-speed switcing. Low-voltage drive.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS Tstg PW10s, duty cycle1% Tc=25°C Conditions Ratings 1.75 +150 Unit
Electrical Characteristics Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) RDS(on) Conditions ID=1mA, VGS=0V IG=±100A, VDS=0V VDS=250V, VGS=0V VGS=±25V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=6A ID=6A, VGS=10V 0.25 0.35 Ratings Unit
Continued next page.
SANYO Semiconductor Co.,Ltd. products described contained herein are, with regard "standard application", intended general electronics equipment (home appliances, equipment, communication device, office equipment, industrial equipment etc.). products mentioned herein shall intended "special application" (medical equipment whose purpose sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level reliability directly threaten human lives case failure malfunction product cause harm human bodies, shall they grant guarantee thereof. should intend products applications outside standard applications customer considering such and/or outside scope intended standard applications, please consult with prior intended use. there consultation inquiry before intended use, customer shall solely responsible use. Specifications SANYO Semiconductor Co.,Ltd. products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer' products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer' products equipment.
11409 TC-00001814 71608QA No.5369-1/4
2SK2142
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) td(off) Conditions VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=100V, VGS=10V, ID=12A VDS=100V, VGS=10V, ID=12A VDS=100V, VGS=10V, ID=12A IS=12A, VGS=0V Ratings 1250 Unit
Package Dimensions
unit (typ) 7507-002
Switching Time Test Circuit
VDD=100V
10.2
ID=6A RL=16.7
PW=10s D.C.1%
VOUT
15.1
18.0
2SK2142
(5.6)
14.0
Gate Drain Source SANYO TO-220
2.55
2.55
Tc=25°C
VDS=10V
75°C
Drain Current,
Drain Current,
25°C
Drain-to-Source Voltage,
IT14355
Gate-to-Source Voltage,
IT14356
No.5369-2/4
2SK2142
RDS(on)
ID=6A Single pulse
RDS(on)
Single pulse
Static Drain-to-Source On-State Resistance, RDS(on)
Tc=75°C
Static Drain-to-Source On-State Resistance, RDS(on)
25°C
-25°C
IT14357
Gate-to-Source Voltage,
Case Temperature,
IT14358
VGS=0V Single pulse
Forward Transfer Admittance,
VDS=10V
0.01 0.001
-25°
25°C
Source Current,
IT14360
Drain Current,
1000
IT14359
Time
(off)
Ciss, Coss, Crss
f=1MHz
Diode Forward Voltage,
Switching Time, Time
VDD=100V VGS=10V
Ciss, Coss, Crss
Ciss
1000
Coss
IT14362
td(on)
Drain Current,
IT14361
Drain-to-Source Voltage,
Gate-to-Source Voltage,
VDS=100V ID=12A
IDP=48A
PW10s
Drain Current,
ID=12A
Operation this area limited RDS(on). Tc=25°C Single pulse
Total Gate Charge,
IT14363
Drain-to-Source Voltage,
IT14364
No.5369-3/4
2SK2142
Allowable Power Dissipation,
Allowable Power Dissipation,
1.75
Ambient Temperature,
IT14365
Case Temperature,
IT14366
Note usage Since 2SK2142 MOSFET product, please avoid using this device vicinity highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor Co.,Ltd. products described contained herein. SANYO Semiconductor Co.,Ltd. strives supply high-quality high-reliability products, however, semiconductor products fail malfunction with some probability. possible that these probabilistic failures malfunction could give rise accidents events that could endanger human lives, trouble that could give rise smoke fire, accidents that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor Co.,Ltd. products described contained herein controlled under applicable local export control laws regulations, such products require export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written consent SANYO Semiconductor Co.,Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor Co.,Ltd. product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. Upon using technical information products described herein, neither warranty license shall granted with regard intellectual property rights other rights SANYO Semiconductor Co.,Ltd. third party. SANYO Semiconductor Co.,Ltd. shall liable claim suits with regard third party's intellectual property rights which resulted from technical information products mentioned above.
This catalog provides information January, 2009. Specifications information herein subject change without notice.
No.5369-4/4
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