2SJ413 P-Channel Silicon MOSFET 2SJ413 Features Ge

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2SJ413 P-Channel Silicon MOSFET 2SJ413 Features Ge

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Ordering number EN5366B
2SJ413
P-Channel Silicon MOSFET
2SJ413
Features
General-Purpose Switching Device Applications
ON-resistance. Ultrahigh-speed switching. Low-voltage drive. Micaless package facilitating mounting.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS Tstg Tc=25°C PW10µs, duty cycle1% Conditions Ratings -200 +150 Unit
Electrical Characteristics Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=-1mA, VGS=0V IG=±100µA, VDS=0V VDS=-60V, VGS=0V VGS=±16V, VDS=0V VDS=-10V, ID=-1mA VDS=-10V, ID=-25A ID=-25A, VGS=-10V ID=-25A, VGS=-4V VDS=-20V, f=1MHz VDS=-20V, f=1MHz VDS=-20V, f=1MHz Ratings -100 -1.0 7600 2400 -2.0 Unit
Marking J413
Continued next page.
SANYO Semiconductor products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest before usingany SANYO Semiconductor products described contained herein such applications. SANYO Semiconductor assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor products described contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N0806QA 60100TS (KOTO) TA-2633 No.5366-1/4
2SJ413
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Symbol td(on) td(off) Conditions specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. IS=-50A, VGS=0V Ratings -1.0 -1.5 Unit
Package Dimensions
unit (typ) 7505-003
16.0
Switching Time Test Circuit
-10V
VDD= -30V -25A RL=1.2
22.0
21.0
PW=10µs D.C.1%
VOUT
20.4
2SJ413
Gate Drain Source SANYO TO-3PML
5.45
5.45
-100
75°C
VDS= -10V
Drain Current,
Drain Current,
-8.0V -6.0V -5.0V
-3.0V
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
VGS= -2.0V
-1.6 -1.8 -2.0
IT11793
Drain-to-Source Voltage,
Forward Transfer Admittance,
-0.1 -1.0
25°C
Static Drain-to-Source On-State Resistance, RDS(on)
IT11792
Gate-to-Source Voltage,
RDS(on)
25°C
Tc=25°C -25A
IT11795
VDS= -10V
Drain Current,
-100 IT11794
Gate-to-Source Voltage,
No.5366-2/4
2SJ413
RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
100000
Ciss, Coss, Crss
1MHz
Ciss, Coss, Crss
A,VG ,VGS
10000 1000
Ciss
Coss
Crss
IT11797
Ambient Temperature,
10000
IT11796 -100
Time
-30V VGS= -10V
Drain-to-Source Voltage,
IDP= -200A
10µs
Switching Time, Time
1000 -0.1 -1.0
td(off)
Drain Current,
-50A
td(on)
Operation this area limited RDS(on). Tc=25°C Single pulse
Drain Current,
-1.0 IT11798
-1.0 -1.0
Drain-to-Source Voltage,
-100 IT11799
Allowable Power Dissipation,
Allowable Power Dissipation,
Ambient Temperature,
IT11800
Case Temperature,
IT11801
No.5366-3/4
2SJ413
Note usage Since 2SJ413 MOSFET product, please avoid using this device vicinity highly charged objects.
Specifications SANYO Semiconductor products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Semiconductor Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor products (including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must exported without obtaining export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Semiconductor Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO Semiconductor believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information November, 2006. Specifications information herein subject change without notice.
No.5366-4/4

2SJ413 P-Channel Silicon MOSFET 2SJ413 Features Ge

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