FP212 PNP/NPN Epitaxial Planar Silicon Transistors High-Volt

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FP212 PNP/NPN Epitaxial Planar Silicon Transistors High-Volt

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Ordering number:EN4497
FP212
PNP/NPN Epitaxial Planar Silicon Transistors
High-Voltage Driver Applications
Features
Composite type with transistor transistor, package, facilitating high-density mounting. FP212 composed chips, being equivalent 2SA1370 other 2SC3467, placed package. Electrical Connection
1:Base 2:Collector 3:Emitter Common 4:Collector 5:Base 6:Collector 7:Collector (Top view)
Package Dimensions
unit:mm 2097A
[FP212]
1:Base 2:Collector 3:Emitter Common 4:Collector 5:Base 6:Collector 7:Collector SANYO:PCP5 (Bottom view)
Specifications
Absolute Maximum Ratings 25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Tstg Conditions Ratings (-)200 (-)200 (-)5 (-)100 (-)200 (-)10 Unit
Mounted ceramic board unit Mounted ceramic board
0.75 +150
Electrical Characteristics Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Saturation Voltage Saturation Voltage Breakdown Voltage Breakdown Voltage Breakdown Voltage Symbol ICBO IEBO VCE(sat) VBE(sat) VCB=(-)150V, IE=0 VEB=(-)4V, IC=0 VCE=(-)10V, IC=(-)10mA VCE=(-)30V, IC=(-)10mA VCB=(-)30V, f=1MHz VCB=(-)30V, f=1MHz IC=(-)20mA, IB=(-)2mA IC=(-)20mA, IB=(-)2mA (-)200 (-)200 (-)5 (2.6) (1.7) (-)0.6 (-)1.0 Conditons Ratings (-)100 (-)100 Unit
V(BR)CBO IC=(-)10µA, IE=0 V(BR)CEO IC=(-)1mA, RBE= V(BR)EBO IE=(-)10µA, IC=0
Marking:212
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/82494MT (KOTO) A8-9729 No.4497-1/4
FP212
No.4497-2/4
FP212
No.4497-3/4
FP212
products described contained herein intended surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment like, failure which directly indirectly cause injury, death property loss. Anyone purchasing products described contained herein above-mentioned shall: Accept full responsibility indemnify defend SANYO ELECTRIC CO., LTD., affiliates, subsidiaries distributors their officers employees, jointly severally, against claims litigation damages, cost expenses associated with such use: impose responsibilty fault negligence which cited such claim litigation SANYO ELECTRIC CO., LTD., affiliates, subsidiaries distributors their officers employees jointly severally. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties. This catalog provides information May, 1998. Specifications information herein subject change without notice.
No.4497-4/4

FP212 PNP/NPN Epitaxial Planar Silicon Transistors High-Volt

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