2SB1142 2SD1682 Epitaxial Planar Silicon Transistors 2SB1142

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2SB1142 2SD1682 Epitaxial Planar Silicon Transistors 2SB1142

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Ordering number EN2060B
2SB1142 2SD1682
Epitaxial Planar Silicon Transistors
2SB1142 2SD1682
Applications
2.5A High-Speed Switching Applications
Power supplies, relay drivers, lamp drivers.
Features
Adoption FBET MBIT processes. saturation voltage. Large current capacity wide ASO.
Specifications 2SB1142
Absolute Maximum Ratings Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Tstg Tc=25°C Conditions Ratings (-)60 (-)50 (-)6 (-)2.5 (-)5.0 +150 Unit
Electrical Characteristics Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current Current Gain Symbol ICBO IEBO hFE1 hFE2 Conditions VCB=(-)50V, IE=0A VEB=(-)4V, IC=0A VCE=(-)2V, IC=(-)100mA VCE=(-)2V, IC=(-)2A (100)* 100* Ratings (-)100 (-)100 (400)* 560* Unit
Continued next page. 2SB1142 2SD1682 classified 100mA follows Rank 2SB1142 2SD1682
SANYO Semiconductor products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest before usingany SANYO Semiconductor products described contained herein such applications. SANYO Semiconductor assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor products described contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1806EA TC-00000203 O2303TN(KOTO) 92098HA(KT) D151MH,(KOTO) No.2060-1/5
2SB1142 2SD1682
Continued from preceding page.
Parameter Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitterr Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO tstg Conditions VCE=(-)10V, IC=(-)50mA VCB=(-)10V, f=1MHz IC=(-)1A, IB=(-)50mA IC=(-)1A, IB=(-)50mA IC=(-)10µA, IE=0A IC=(-)1mA, RBE= IE=(-)10µA, IC=0A specified Test Circuit. specified Test Circuit. specified Test Circuit. (-)60 (-)50 (-)6 (35)35 (350)550 (30)30 Ratings (25)16 (-250)110 (-)0.85 (-500)300 (-)1.2 Unit
Package Dimensions
unit (typ) 7516-002
Switching Time Test Circuit
OUTPUT 100µF 470µF VCC=25V
PW=20µs D.C.1% INPUT
11.0
VBE=
0.75
IC=10IB1= -10IB2=1A PNP, polarity reversed.
15.5
Emitter Collector Base SANYO TO-126ML
-2.0
2SB1142
2SD1682
-20m
Collector Current,
Collector Current,
-1.6
-15mA
12mA
10mA
-10mA
-1.2
-5mA
-0.8
-3mA -2mA
-0.4
-1mA
-0.4 -0.8 -1.2
IB=0mA
-1.6 -2.0 ITR09031
IB=0mA
ITR09032
Collector-to-Emitter Voltage,
Collector-to-Emitter Voltage,
No.2060-2/5
2SB1142 2SD1682
-2.0
2SB1142
-10m
2SD1682
10mA
-1.6
Collector Current,
-8mA
Collector Current,
-1.2
-6mA
-4mA
-0.8
-2mA
-0.4
IB=0mA
ITR09033
IB=0mA
ITR09034
Collector-to-Emitter Voltage,
-2.8
Collector-to-Emitter Voltage,
-2.4
2SB1142 VCE= Collector Current,
2SD1682 VCE=2V
Collector Current,
-2.0
-1.6
25°C
Ta=7
-1.2
-25°C
-0.8
-0.4 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
Ta=7 25°C -25°
ITR09036
Base-to-Emitter Voltage,
1000
ITR09035 1000
Base-to-Emitter Voltage,
2SD1682 VCE=2V
Ta=75°C
-25°C
2SB1142 VCE=
Ta=75°C
Current Gain,
Current Gain,
25°C -25°C
25°C
-0.01 -0.1 -1.0
0.01
Collector Current,
ITR09037
Collector Current,
ITR09038
Gain-Bandwidth Product,
2SB1142 2SD1682 VCE=10V Output Capacitance,
2SB1142 2SD1682 f=1MHz
PNP, minus sign omitted.
0.01
ITR09039
PNP, minus sign omitted.
Collector Current,
Collector-to-Base Voltage,
ITR09040
No.2060-3/5
2SB1142 2SD1682
VCE(sat)
Collector-to-Emitter Saturation Voltage, VCE(sat) 2SB1142 IB=20
1000
VCE(sat)
2SD1682 IB=20
Collector-to-Emitter Saturation Voltage, VCE(sat)
-1000 -100 -0.01 -0.1 -1.0
75°C
0.01
Collector Current,
ITR09041
VBE(sat)
Collector Current,
ITR09042
VBE(sat)
Base-to-Emitter Saturation Voltage, VBE(sat)
Base-to-Emitter Saturation Voltage, VBE(sat)
2SB1142 IB=20
2SD1682 IB=20
-1.0 -0.01
-25°C
25°C
-25°C
25°C
75°C
75°C
-0.1
-1.0
0.01
Collector Current,
ITR09043
Collector Current,
ITR09044
ICP=5A IC=2.5A
2SB1142 2SD1682 Collector Dissipation,
2SB1142 2SD1682
Collector Current,
Ta=25°C Single pulse PNP, minus sign omitted.
ITR09045
Collector-to-Emitter Voltage,
Ambient Temperature,
IT11602
2SB1142 2SD1682
Collector Dissipation,
Case Temperature,
IT11603
No.2060-4/5
2SB1142 2SD1682
Specifications SANYO Semiconductor products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Semiconductor Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor products (including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must exported without obtaining export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Semiconductor Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO Semiconductor believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information October, 2006. Specifications information herein subject change without notice.
No.2060-5/5

2SB1142 2SD1682 Epitaxial Planar Silicon Transistors 2SB1142

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