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ROHS COMPLIANT METAL GATE SILICON pls) GOLD METALLISED MULTI
Top Searches for this datasheetD1222UK ROHS COMPLIANT METAL GATE SILICON pls) GOLD METALLISED MULTI-PURPOSE SILICON DMOS 12.5V 175MHz PUSH-PULL FEATURES SIMPLIFIED AMPLIFIER DESIGN pls) SUITABLE BROAD BAND APPLICATIONS Crss SIMPLE BIAS CIRCUITS NOISE SOURCE (COMMON) DRAIN GATE 6.45 1.65R 16.51 6.47 18.41 1.52 4.82 24.76 1.52 0.81R 0.13 2.16 Tol. 0.13 0.13 0.76 0.13 0.13 0.13 0.25 0.13 0.13 0.13 0.02 0.13 Inches 0.254 0.065R 0.650 0.255 0.725 0.060 0.190 0.975 0.060 0.032R 0.005 0.085 Tol. 0.005 0.005 0.03 0.005 0.005 0.005 0.010 0.005 0.005 0.005 0.001 0.005 DRAIN GATE HIGH GAIN MINIMUM APPLICATIONS HF/VHF/UHF COMMUNICATIONS from ABSOLUTE MAXIMUM RATINGS (Tcase 25°C unless otherwise stated) BVDSS BVGSS ID(sat) Tstg Side Semelab reserves right change test conditions, parameter limits package dimensions without notice. Information furnished Semelab believed both accurate reliable time going press. However Semelab assumes responsibility errors omissions discovered use. Semelab encourages customers verify that datasheets current before placing orders. Power Dissipation Drain Source Breakdown Voltage Gate Source Breakdown Voltage Drain Current* Storage Temperature Maximum Operating Junction Temperature 290W ±20V 150°C 200°C Semelab plc. Telephone +44(0)1455 556565. +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Document Number 3341 Issue D1222UK ELECTRICAL CHARACTERISTICS (Tcase 25°C unless otherwise stated) Parameter Test Conditions Min. SIDE BVDSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency 12.5V 10mA 12.5V 175MHz 2.4A 100mA 20:1 1MHz 1MHz 1MHz Typ. Max. Unit mhos VGS(th) Gate Threshold Voltage* TOTAL DEVICE VSWR Load Mismatch Tolerance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance SIDE 12.5V 12.5V Pulse Test: Pulse Duration Duty Cycle HAZARDOUS MATERIAL WARNING ceramic portion device between leads metal flange beryllium oxide. Beryllium oxide dust highly toxic care must taken during handling mounting avoid damage this area. THESE DEVICES MUST NEVER THROWN AWAY WITH GENERAL INDUSTRIAL DOMESTIC WASTE. THERMAL DATA RTHj-case Thermal Resistance Junction Case Max. 0.6°C Semelab reserves right change test conditions, parameter limits package dimensions without notice. Information furnished Semelab believed both accurate reliable time going press. However Semelab assumes responsibility errors omissions discovered use. Semelab encourages customers verify that datasheets current before placing orders. Semelab plc. Telephone +44(0)1455 556565. +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Document Number 3341 Issue Other recent searchesUSP-2B01 - USP-2B01 USP-2B01 Datasheet uPD78P0208 - uPD78P0208 uPD78P0208 Datasheet PD16340 - PD16340 PD16340 Datasheet MMBT5551LT1 - MMBT5551LT1 MMBT5551LT1 Datasheet MHVIC915R2 - MHVIC915R2 MHVIC915R2 Datasheet JCIQ-176M - JCIQ-176M JCIQ-176M Datasheet app076 - app076 app076 Datasheet AP23QBC - AP23QBC AP23QBC Datasheet F-F01 - F-F01 F-F01 Datasheet
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