Complex (2-elements) Bipolar Transistor EMX28 Structure Sili

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Complex (2-elements) Bipolar Transistor EMX28 Structure Sili

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frequency transistor
Complex (2-elements) Bipolar Transistor
EMX28
Structure Silicon Epitaxial Planar Transistor Dimensions (Unit
EMT6
Features 2SD2696 dies incorpolated EMT6 package. Collector saturation voltage low. (sat) max. 300mA 100mA
1pin mark
0.22
0.13
Each lead same dimensions
Applications General purpose small signal amplifier Packaging specifications
Package Type EMX28 Code Basic ordering unit (pieces) Taping 8000
Abbreviated symbol
Inner circuit
Absolute maximum ratings (Ta=25°C) <Tr1, Tr2>
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range storage temperature Symbol VCBO VCEO VEBO Tstg
Limits Unit TOTAL ELEMENT +150
Pw=10ms, Single pulse Each terminal mounted recommended land.
Electrical characteristics (Ta=25°C) <Tr1, Tr2>
Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage current gain Transition frequency Output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO (sat) Min. Typ. Max. Unit Conditions IC=1mA IC=10µA IE=10µA VCB= VEB= IC=100mA, VCE=2V, IC=100mA VCE=2V, -100mA, f=100MHz VCB=10V, f=1MHz
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2009 ROHM Co., Ltd. rights reserved.
2009.05 Rev.B
EMX28
Electrical characteristics curves
1.2mA 0.8mA 0.6mA 0.4mA IB=0.2mA COLLECTOR EMITTER VOLTAGE COLLECTOR CURRENT [mA] COLLECTOR CURRENT [mA] 1000 Ta=25°C pulsed 1.6mA VCE=2V pulsed Ta=125°C 85°C 25°C -40°C
Data Sheet
BASE EMITTER VOLTAGE
Fig.1 Typical Output Characteristics
Fig.2 Grounded Emitter Propagation Characteristics
1000
1000 VCE=5V CURRENT GAIN
CURRENT GAIN
VCE=2V
Ta=125°C 85°C 25°C -40°C
Ta=25°C pulsed 1000
VCE=2V pulsed 1000
COLLECTOR CURRENT [mA]
COLLECTOR CURRENT [mA]
Fig.3 Current Gain Collector Current
Fig.4 Current Gain Collector Current
/IB=50/1 20/1 10/1
COLLECTOR SATURATION VOLTAGE VCE(s
Ta=25°C pulsed
/IB=10/1 pulsed
COLLECTOR SATURATION VOLTAGE VCE(sat)
125°C 85°C 25°C -40°C
0.01 1000 COLLECTOR CURRENT [mA]
0.01 1000 COLLECTOR CURRENT [mA]
Fig.5 Collector-Emitter Saturation Voltage Collector Current
Fig.6 Collector-Emitter Saturation Voltage Collector Current
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2009 ROHM Co., Ltd. rights reserved.
2009.05 Rev.B
EMX28
COLLECTOR SATURATION VOLTAGE VCE(s /IB=20/1 pulsed COLLECTOR SATURATION VOLTAGE VCE(sat) Ta=125°C 85°C 25°C -40°C
Data Sheet
Ta=125
0.01 COLLECTOR CURRNT [mA] 1000
0.01
/IB=50/1 pulsed 1000 COLLECTOR CURRENT [mA]
Fig.7 Collector-Emitter Saturation Voltage Collector Current
Fig.8 Collector-Emitter Saturation Voltage Collector Current
1000
COLLECTOR OUTPUT CAPACITANCE Cob(pF)
EMITTER INPUT CAPACITANCE Cib(pF)
Ta=25°C VCE= pulsed
TRANSITION FREQUENCY [MHz]
Ta=25°C f=1MHz IE=0A
1000 EMITTER CURRENT [mA]
Fig.9 Transion frequency Emitter Collector
COLLECTOR BASE VOLTAGE EMITTER BASE VOLTAGE
Fig.10 Emitter input capacitance EmitterBase Voltage Collector output capacitance CollectorBase Voltage
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2009 ROHM Co., Ltd. rights reserved.
2009.05 Rev.B
Notice
Notes
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Complex (2-elements) Bipolar Transistor EMX28 Structure Sili

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