Medium Power Transistor (32V, 2SD1766 2SD1758 2SD1862 Featur

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Medium Power Transistor (32V, 2SD1766 2SD1758 2SD1862 Featur

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2SD1766 2SD1758 2SD1862
Medium Power Transistor (32V,
2SD1766 2SD1758 2SD1862
Features VCE(sat). VCE(sat) 0.5V(Typ.) 0.2A Complements 2SB1188 2SB1182 2SB1240. External dimensions (Unit
2SD1766
0.5±0.1
4.5+0.2 -0.1 1.6±0.1 +0.2 -0.1
2SD1758
1.5±0.3
6.5±0.2 5.1+0.2 -0.1 C0.5 2.3+0.2 -0.1 0.5±0.1
4.0±0.3
+0.2 -0.1
5.5+0.3 -0.1
1.0±0.2
+0.1 -0.05 0.4±0.1 1.5±0.1
0.75 2.3±0.2
0.65±0.1
0.4±0.1 1.5±0.1
0.5±0.1 3.0±0.2
2.3±0.2
0.55 ±0.1 1.0±0.2
Abbreviated symbol
Structure Epitaxial planar type silicon transistor
ROHM MPT3 EIAJ SC-62
Base Collector Emitter
ROHM CPT3 EIAJ SC-63
Base Collector Emitter
2SD1862
6.8±0.2 2.5±0.2
0.65Max.
0.5±0.1
2.54 2.54 1.05
14.5±0.5
4.4±0.2
0.45±0.1
ROHM
Emitter Collector Base
Denotes
Absolute maximum ratings (Ta=25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current 2SD1766 2SD1758 2SD1862 Junction temperature Storage temperature Tstg Symbol VCBO VCEO VEBO Collector power dissipation Limits +150 Unit (DC) (Pulse)
(Tc=25°C)
Single pulse, Pw=20ms When mounted ceramic board. Printed circuit board: thick, collector copper plating lager.
Rev.A
9.5±0.5
2SD1766 2SD1758 2SD1862
Electrical characteristics (Ta=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current current transfer ratio
2SD1766,2SD1758,
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat)
Min.
Typ.
Max.
Unit IC=50A IC=1mA IE=50A VCB=20V VEB=4V
Conditions
VCE=3V, IC=0.5A IC/IB=2A/0.2A VCE=5V, -500mA, f=100MHz VCB=10V, IE=0A, f=1MHz
2SD1862
Collector-emitter saturation voltage Transition frequency Output capacitance
Measured using pulse current.
Packaging specifications
Package Code Type 2SD1766 2SD1758 2SD1862
Basic ordering unit (pieces)
Taping T100 1000 2500 2500
values classified follows
Item
Electrical characteristic curves
2000
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT
1000
Ta=25°C VCE=3V
Ta=25°C 3.0mA
2.7mA 2.4mA 2.1mA 1.8mA
CURRENT GAIN
Ta=25°C
1.5mA 1.2mA 0.9mA 0.6mA 0.3mA IB=0A
VCE=3V
BASE EMITTER VOLTAGE
COLLECTOR EMITTER VOLTAGE
COLLECTOR CURRENT (mA)
Fig.1 Grounded emitter propagation characteristics
Fig.2 Grounded emitter output characteristics
Fig.3
current gain collector current
Rev.A
2SD1766 2SD1758 2SD1862
COLLECTOR SATURATION VOLTAGE VCE(sat) (mV)
BASE SATURATION VOLTAGE VBE(sat)
TRANSITION FREQUENCY (MHz)
Ta=25°C
1000
Ta=25°C
Ta=25°C VCE=5V
IC/IB=10
IC/IB=50
-100 -200 -500
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
EMITTER CURRENT (mA)
Fig.4
Collector-emitter saturation voltage collector current
Fig.5
Collector-emitter saturation voltage collector current
Fig.6 Transition frequency emitter current
COLLECTOR OUTPUT CAPACITANCE (pF) EMITTER INPUT CAPACITANCE (pF)
1000
COLLECTOR CURRENT
COLLECTOR CURRENT
Ta=25°C f=1MHz IE=0A IC=0A
0.05 Ta=25°C Single nonrepetitive 0.02 pulse 0.01
0.05
=100ms
Pw=10ms 100ms
Tc=25°C Single nonrepetitive 0.02 pulse 0.01
COLLECTOR BASE VOLTAGE EMITTER BASE VOLTAGE
COLLECTOR EMITTER VOLTAGE
COLLECTOR EMITTER VOLTAGE
Fig.7 Collector output capacitance collector-base voltage Emitter input capacitance emitter-base voltage
Fig.8 Safe operating area (2SD1766)
Fig.9
Safe operating area (2SD1758)
COLLECTOR CURRENT
Pulse
0.05 Ta=25°C Single nonrepetitive pulse
COLLECTOR EMITTER VOLTAGE
Fig.10
Safe operating area (2SD1862)
Rev.A
Appendix
Notes
technical content pages this document reproduced form transmitted means without prior permission ROHM CO.,LTD. contents described herein subject change without notice. specifications product described this document reference only. Upon actual use, therefore, please request that specifications separately delivered. Application circuit diagrams circuit constants contained herein shown examples standard operation. Please careful attention peripheral conditions when designing circuits deciding upon circuit constants set. data, including, limited application circuit diagrams information, described herein intended only illustrations such devices specifications such devices. ROHM CO.,LTD. disclaims warranty that such devices shall free from infringement third party's intellectual property rights other proprietary rights, further, assumes liability whatsoever nature event such infringement, arising from connected with related such devices. Upon sale such devices, other than buyer's right such devices itself, resell otherwise dispose same, express implied right license practice commercially exploit intellectual property rights other proprietary rights owned controlled ROHM CO., LTD. granted such buyer. Products listed this document antiradiation design.
products listed this document designed used with ordinary electronic equipment devices (such audio visual equipment, office-automation equipment, communications devices, electrical appliances electronic toys). Should intend these products with equipment devices which require extremely high level reliability malfunction with would directly endanger human life (such medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers other safety devices), please sure consult with sales representative advance. About Export Control Order Japan Products described herein objects controlled goods Annex (Item Export Trade Control Order Japan. case export from Japan, please confirm applies "objective" criteria "informed" MITI clause) basis "catch controls Non-Proliferation Weapons Mass Destruction.
Appendix1-Rev1.1

Medium Power Transistor (32V, 2SD1766 2SD1758 2SD1862 Featur

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