-60V Bipolar transistor 2SA2092 Applications High-speed swit

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-60V Bipolar transistor 2SA2092 Applications High-speed swit

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2SA2092
-60V Bipolar transistor
2SA2092
Applications High-speed switching, frequency amplification Feature High speed switching. Typ. 30ns -1A) saturation voltage. (Typ. 200mV 500mA, 50mA) Strong discharge resistance inductive load capacitance load. switching noise. Structure epitaxial planar silicon transistor Absolute maximum ratings (Ta=25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range storage temperature PULSE Symbol VCBO VCEO VEBO Tstg
External dimensions (Unit
TSMT3
1.0MAX
0.85
0~0.1
Base Emitter Collector
0.95 0.95 0.16
Each lead same dimensions
Abbreviated symbol
Packaging specifications
Limits +150 Unit
Part 2SA2092 Package Packaging type Code Basic ordering unit (pieces) TSMT3 Taping 3000
rank
120-270
Pw=10ms Each terminal mounted recommended land
Electrical characteristics (Ta=25
Parameter Collector-emitter breakdown voltage Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat)
Min.
Typ. -200
Max. -1.0 -1.0 -500
Unit -1mA -100A -100A VCB= -40V VEB=
Conditions
Collector-base breakdown voltage Emitter-base breakdown voltage
Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage current gain Transition frequency Collector output capacitance Turn-on time Storage time Fall time
Pulse measurement switching test circuit rank
-500mA, -50mA VCE= -2V, -100mA VCE= -10V, IE=100mA, f=10MHz VCB= -10V, IE=0, f=1MHz -1A, IB1= -100mA IB2=100mA -25V
tstg
0.3~0.6
2SA2092
Electrical characteristics curve
VCE=2V
1000A
1000
900A
800A
VCE=2V
125°C
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT
700A 600A
CURRENT GAIN
125°C 25°C -40°C
500A 400A
-40°C
25°C
300A 200A
100A
0.01
IB=0A
BASE EMITTER VOLTAGE
0.001
0.01
COLLECTOR EMITTER VOLTAGE
COLLECTOR CURRENT
Fig.1 Grounded emitter propagation characteristics
Fig.2 Typical output characteristics
Fig.3 current gain collector current
1000
Ta=25°C
IC/IB=10/1
Ta=25°C
COLLECTOR SATURATION VOLTAGE VCE(sat)(V)
VCE=5V
CURRENT GAIN
VCE=3V VCE=2V
125°C
COLLECTOR SATURATION VOLTAGE (sat)(V)
25°C -40°C
IC/IB=20/1 IC/IB=10/1
0.01
0.001
0.01
0.01 0.001
0.01
0.01 0.001
COLLECTOR CURRENT
COLLECTOR CURRENT
COLLECTOR CURRENT
Fig.4 current gain collector current
Fig.5 Collector-emitter saturation voltage Fig.6 Collector-emitter saturation voltage collector current collector current
IC/IB=10/1
TRANSITION FREQUENCY (MHz)
1000
Ta=25°C VCE=10V
COLLECOTR OUTPUT CAPACITACNE (pF) EMITTER INPUT CAPACITANCE (pF)
1000
Ta=25°C f=1MHz
BASE EMITTER SATURATION VOLTAGE VBE(sat)
-40°C
25°C 125°C
0.01 0.001
0.01
0.001
0.01
COLLECTOR CURRENT
EMITTER CURRENT
COLLECTOR BASE VOLTAGE EMITTER BASE VOLTAGE
Fig.7 Base-emitter saturation voltage collector current
Fig.8 Transition frequency
Fig.9
Collector output capacitance Emitter input capacitance
2SA2092
1000
Ta=25°C VCC= -25V IC/IB= -IC/IB2=10
10ms
COLLECTOR CURRENT
500s
SWITCHING TIME (ns)
100ms
tstg
0.01
0.01
0.001 0.01
Single repetitive pulse
COLLECTOR CURRENT
COLLECTOR EMITTER VOLTAGE
Fig.10 Switching Time
Fig.11 Safe operating area
Switching test circuit
RL=25 DUTY CYCLE -25V
Base current waveform Collector current waveform Tstg
Appendix
Notes
technical content pages this document reproduced form transmitted means without prior permission ROHM CO.,LTD. contents described herein subject change without notice. specifications product described this document reference only. Upon actual use, therefore, please request that specifications separately delivered. Application circuit diagrams circuit constants contained herein shown examples standard operation. Please careful attention peripheral conditions when designing circuits deciding upon circuit constants set. data, including, limited application circuit diagrams information, described herein intended only illustrations such devices specifications such devices. ROHM CO.,LTD. disclaims warranty that such devices shall free from infringement third party's intellectual property rights other proprietary rights, further, assumes liability whatsoever nature event such infringement, arising from connected with related such devices. Upon sale such devices, other than buyer's right such devices itself, resell otherwise dispose same, express implied right license practice commercially exploit intellectual property rights other proprietary rights owned controlled ROHM CO., LTD. granted such buyer. Products listed this document antiradiation design.
products listed this document designed used with ordinary electronic equipment devices (such audio visual equipment, office-automation equipment, communications devices, electrical appliances electronic toys). Should intend these products with equipment devices which require extremely high level reliability malfunction with would directly endanger human life (such medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers other safety devices), please sure consult with sales representative advance. About Export Control Order Japan Products described herein objects controlled goods Annex (Item Export Trade Control Order Japan. case export from Japan, please confirm applies "objective" criteria "informed" MITI clause) basis "catch controls Non-Proliferation Weapons Mass Destruction.
Appendix1-Rev1.1

-60V Bipolar transistor 2SA2092 Applications High-speed swit

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